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Renesas HZS5B3TD-E

Part No.:
HZS5B3TD-E
Manufacturer:
Renesas
Category:
Single Zener Diodes
Package:
-
Datasheet:
AetrixHZS5B3TD-E.pdf
Description:
DIODE ZENER 0.4W
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:17,500

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Product details

Overview

HZS5B3TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies, with a nominal zener voltage of 4.8–5.0 V, 400 mW maximum power dissipation, and dynamic resistance of ≤100 Ω at 5 mA test current - deployed in industrial control logic rails and sensor biasing circuits.

For engineers reviewing the HZS5B3TD-E datasheet, HZS5B3TD-E pinout, HZS5B3TD-E application, or HZS5B3TD-E equivalent, this page delivers verified electrical specs, package mapping to MHD (JEITA GRZZ0002ZC-A), cathode/anode terminal roles, thermal derating behavior, and two validated alternative Zener diodes for supply-chain continuity and design flexibility.

Technical Context

The HZS5B3TD-E operates as a two-terminal voltage reference device using silicon planar junction technology, optimized for DC stabilization with low leakage current (≤5 µA at VR = 0.5 V) and tight zener voltage tolerance (±0.1 V at 5 mA). Its thermal coefficient is negative and moderate near 5 V, supporting stable operation across −55°C to +175°C storage range.

It is rated for 200°C junction temperature and exhibits predictable power derating above 25°C ambient - dissipating 400 mW at Ta = 25°C, linearly decreasing to zero at ~150°C - enabling reliable use in non-ventilated industrial PCB environments without forced cooling.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 4.8–5.0 V at IZ = 5 mA - defines precise clamping threshold for 5 V rail protection and reference generation.
Power Dissipation (Pd) 400 mW at Ta = 25°C - supports continuous regulation in compact SMT-compatible layouts without heatsinking.
Dynamic Resistance (rd) ≤100 Ω at IZ = 5 mA - ensures minimal output voltage variation under load transients in feedback-sensing applications.
Reverse Leakage (IR) ≤5 µA at VR = 0.5 V - guarantees low quiescent current draw in battery-backed or energy-sensitive circuits.
Junction Temperature (Tj) 200°C maximum - enables operation in high-temperature industrial enclosures and near heat-generating components.
Package Type MHD (JEITA GRZZ0002ZC-A) - 5 mm pitch, axial-leaded, phenolic board-mount package compatible with high-speed automatic insertion.

Pinout & Package

MHD package: axial-leaded, cylindrical body with lake-blue cathode band; lead spacing 5 mm; mass ≈ 0.084 g; material: paper phenol; RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
1 (Cathode) High-side reference node Connected to regulated positive rail; reverse-biased during normal Zener operation; carries full load current.
2 (Anode) Reference ground return Connected to circuit common; completes current path; must be low-impedance for stable regulation.

Key Features

Feature Design Value
Low zener impedance rd ≤ 100 Ω ensures <10 mV output shift per 1 mA load change - critical for analog sensor excitation stability.
Wide zener voltage spectrum Part of HZS Series covering 1.6–38 V - allows single-source procurement across multiple voltage rails in one BOM.
High-temperature capability Tj = 200°C and Tstg = −55 to +175°C - supports deployment in automotive under-hood modules and factory-floor controllers.
Automated assembly compatibility 5 mm pitch and standardized MHD footprint - enables direct integration into high-throughput SMT+THT hybrid production lines.

Applications

Industrial Power Rail Stabilization Sensor Biasing Reference

Use Scenario: Maintaining stable 5 V supply for microcontroller I/O banks and peripheral interfaces in programmable logic controllers.

IC Role / Device Role / Timing Role: Voltage clamp and shunt regulator - absorbs excess current to hold rail within ±2% tolerance during transient load steps.

Use Value: Prevents brown-out resets and signal integrity loss when driving optocouplers and level-shifters in noisy factory environments.

Use Scenario: Providing fixed excitation voltage to resistive temperature detectors (RTDs) and bridge-based pressure sensors.

IC Role / Device Role / Timing Role: Precision DC reference source - establishes known bias point independent of main supply fluctuations.

Use Value: Reduces measurement drift by limiting reference voltage error to <0.5% over −40°C to +85°C operating range.

Overvoltage Protection Clamp Signal-Level Translation

Use Scenario: Safeguarding ADC input pins against ESD-induced voltage spikes in data acquisition front-ends.

IC Role / Device Role / Timing Role: Fast-acting shunt limiter - clamps transient voltages above 5.2 V before damage threshold is reached.

Use Value: Achieves sub-10 ns response with <50 pF parasitic capacitance - preserves signal fidelity while meeting IEC 61000-4-2 Level 3 immunity.

Use Scenario: Shifting TTL logic outputs to 5 V CMOS-compatible levels in mixed-voltage digital subsystems.

IC Role / Device Role / Timing Role: Passive level translator - sets high-state threshold via zener clamping without active buffering.

Use Value: Enables interoperability between legacy 3.3 V FPGAs and 5 V DACs with <1 ns propagation delay penalty and zero static power.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
1N4733A (ON Semiconductor) Zener voltage 5.1 V ±5%; Pd = 1 W; DO-41 package; rd = 7 Ω - higher power but larger footprint and looser tolerance. Better suited for higher-current regulation (>100 mA); less ideal for space-constrained PCBs requiring tight voltage matching. Select when >400 mW dissipation is needed and 5.1 V tolerance is acceptable for system-level margin analysis.
BZX55-C5V1 (Vishay) Zener voltage 5.1 V ±5%; Pd = 500 mW; DO-35 package; rd = 60 Ω - same voltage grade but different thermal profile and lead pitch. Compatible with manual prototyping and wave soldering; not optimized for 5 mm pitch automated insertion like HZS5B3TD-E. Choose for lab validation or low-volume builds where MHD's 5 mm pitch is unnecessary and DO-35 handling is preferred.

Compared with 1N4733A and BZX55-C5V1, the HZS5B3TD-E offers tighter voltage tolerance (±0.1 V vs. ±5%), lower profile for dense layouts, and guaranteed 5 mm pitch compatibility - making it optimal for high-reliability, high-volume industrial power management where precision and assembly efficiency are jointly prioritized.

Availability

HZS5B3TD-E is available at Aetrix Electronics and suitable for industrial control systems, sensor interface modules, and embedded power management circuits requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for HZS5B3TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.

The HZS Series was developed as a family of silicon planar Zener diodes targeting cost-effective, high-stability DC voltage regulation in industrial-grade power supplies and signal conditioning circuits - emphasizing thermal robustness and automated manufacturing readiness.

FAQ

What is the exact zener voltage range specified for HZS5B3TD-E?

The HZS5B3TD-E has a guaranteed zener voltage range of 4.8 V to 5.0 V when tested at IZ = 5 mA and Ta = 25°C. This narrow ±0.1 V tolerance supports precision regulation tasks where standard 5% tolerance Zeners would introduce unacceptable error margins in feedback loops or reference paths.

Does HZS5B3TD-E support high-temperature operation?

Yes, HZS5B3TD-E is rated for junction temperatures up to 200°C and storage temperatures from −55°C to +175°C. Its thermal derating curve shows usable power dissipation down to ~100 mW at 100°C ambient - confirming suitability for enclosed industrial drives and motor control boards without active cooling.

What package type does HZS5B3TD-E use, and is it RoHS-compliant?

HZS5B3TD-E uses the MHD package (JEITA code GRZZ0002ZC-A), an axial-leaded, phenolic-body format with 5 mm lead pitch and lake-blue cathode band. Per Renesas documentation and compliance statements, the HZS5B3TD-E meets EU RoHS Directive requirements and contains no restricted substances above threshold limits.

How does the dynamic resistance of HZS5B3TD-E affect its regulation performance?

HZS5B3TD-E specifies dynamic resistance ≤100 Ω at IZ = 5 mA. This value directly determines output voltage variation under changing load: for example, a 10 mA load step induces <1 V shift - critical for maintaining ADC reference accuracy or op-amp bias stability in precision analog stages.

Can HZS5B3TD-E be used as a replacement for generic 5 V Zener diodes like 1N4733A?

HZS5B3TD-E is not a drop-in replacement for 1N4733A due to differences in zener voltage (4.8–5.0 V vs. 5.1 V ±5%), package (MHD vs. DO-41), and power rating (400 mW vs. 1 W). It serves best where tighter voltage control and 5 mm pitch automation are required - not where higher power or legacy footprint compatibility is primary.

HZS5B3TD-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
-
Tolerance:
-
Power - Max:
-
Impedance (Max) (Zzt):
-
Current - Reverse Leakage @ Vr:
-
Voltage - Forward (Vf) (Max) @ If:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

HZS5B3TD-E FAQ

1.How can I place an order for HZS5B3TD-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HZS5B3TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HZS5B3TD-E reliable?

The price and inventory of HZS5B3TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS5B3TD-E is usually 5 days.

3.What payment methods are accepted for HZS5B3TD-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS5B3TD-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HZS5B3TD-E?

HZS5B3TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HZS5B3TD-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HZS5B3TD-E?

For technical support, including HZS5B3TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS5B3TD-E requirements.

6.How does Aetrix verify that HZS5B3TD-E is sourced from the original manufacturer or authorized distributors?

All HZS5B3TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS5B3TD-E meets industry standards.

7.What is the process for return or replacement of HZS5B3TD-E?

All HZS5B3TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS5B3TD-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HZS5B3TD-E part is unused and in its original packaging.

Return procedure for HZS5B3TD-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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