Renesas HZS5C1TD-P-E

Overview

HZS5C1TD-P-E from ROHM Semiconductor is a silicon epitaxial planar Zener diode designed for precision voltage regulation in stabilized power supplies, with a nominal zener voltage of 4.9–5.1 V, maximum power dissipation of 400 mW, dynamic resistance ≤100 Ω at 5 mA, and reverse leakage current ≤1.5 µA at 0.5 V. It is used in low-power reference circuits, overvoltage protection, and biasing networks for analog ICs.

For engineers reviewing the HZS5C1TD-P-E datasheet, HZS5C1TD-P-E pinout, HZS5C1TD-P-E application, or HZS5C1TD-P-E equivalent, key selection criteria include zener voltage tolerance (±0.2 V), low dynamic impedance for stable regulation under load variation, thermal stability up to 200°C junction temperature, and compatibility with 5 mm-pitch automated insertion equipment.

Technical Context

This discrete Zener diode operates in reverse breakdown mode with DC-tested characteristics, delivering tight voltage regulation across its specified test current range (IZ = 5 mA). Its epitaxial planar construction ensures low leakage (<1.5 µA) and consistent dynamic resistance (≤100 Ω), critical for low-noise reference generation.

The device exhibits a negative temperature coefficient in the 5 V range (~−2 mV/°C), confirmed by ROHM's characteristic curves, and is rated for continuous operation from −55°C to +175°C storage and up to +200°C junction temperature-enabling use in thermally demanding industrial environments.

Key Specifications

Pinout & Package

DO-35 glass axial package with cathode band marking; two-terminal device requiring no orientation-specific PCB footprint beyond standard 5 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage regulation applications.

Compared with HZS5C1TD-P-E, the 1N4732A offers higher power handling but sacrifices voltage accuracy and board-space efficiency, while the BZX55-C5V1 matches the DO-35 form factor but trades tighter regulation and lower dynamic impedance for broader availability and lower unit cost.

Availability

HZS5C1TD-P-E is available at Aetrix Electronics and suitable for industrial power monitoring, automotive sensor biasing, consumer audio DC-DC feedback, and medical instrument reference applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for HZS5C1TD-P-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ROHM Semiconductor is a Japanese semiconductor manufacturer specializing in analog, power, and sensor solutions for automotive, industrial, and consumer markets.

HZS5C1TD-P-E belongs to ROHM's HZS Series of silicon epitaxial planar Zener diodes, engineered for high-precision, low-drift voltage regulation in compact, thermally robust packages for mission-critical power supply stabilization.

FAQ

What is the exact zener voltage range for HZS5C1TD-P-E?

HZS5C1TD-P-E has a guaranteed zener voltage range of 4.9 V to 5.1 V at a test current of 5 mA, per ROHM's ADE-208-120A(Z) datasheet Rev 1. This ±0.2 V tolerance reflects Grade C1 specification within the HZS5 family and is tighter than standard ±5% Zener diodes, making HZS5C1TD-P-E suitable for precision reference applications where regulation stability is critical.

Does HZS5C1TD-P-E support automated assembly?

Yes, HZS5C1TD-P-E uses a DO-35 glass axial package with 5 mm lead pitch, explicitly qualified for high-speed automatic insertion per the HZS Series datasheet. Its mechanical outline and lead spacing comply with industry-standard pick-and-place and wave soldering processes, enabling direct integration into legacy and hybrid SMT-through-hole production lines without retooling.

What is the maximum junction temperature rating for HZS5C1TD-P-E?

HZS5C1TD-P-E is rated for a maximum junction temperature (T_j) of 200°C, as specified in the Absolute Maximum Ratings table of the official ROHM datasheet. This high thermal limit allows reliable operation in under-hood automotive modules, industrial motor drives, and enclosed power supplies where ambient temperatures exceed 100°C, provided PCB copper area and airflow meet recommended thermal design guidelines.

How does the dynamic resistance of HZS5C1TD-P-E affect regulation performance?

HZS5C1TD-P-E has a dynamic resistance (r_d) of ≤100 Ω at 5 mA, meaning its output voltage changes by ≤0.5 V for a 5 mA load step - directly improving regulation accuracy under varying current demand. This low r_d value minimizes output deviation in feedback loops and reference circuits, making HZS5C1TD-P-E preferable over higher-impedance Zeners like BZX55-C5V1 (≤150 Ω) in noise-sensitive analog designs.

Is HZS5C1TD-P-E RoHS compliant and halogen-free?

Yes, HZS5C1TD-P-E conforms to RoHS Directive 2011/65/EU and is halogen-free per ROHM's environmental compliance documentation. The device contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE), and all bromine and chlorine content is below 900 ppm - satisfying strict environmental requirements for industrial and medical end equipment.