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Renesas HZS6.2NB2TD-P-E
- Part No.:
- HZS6.2NB2TD-P-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS6.2NB2TD-P-E.pdf
- Description:
- DIODE ZENER 0.4W
- Quantity:
- Payment:
- Shipping:
Inventory:6,250
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Product details
Overview
HZS6.2NB2TD-P-E from ROHM Semiconductor is a silicon epitaxial planar Zener diode designed for precision voltage stabilization in low-power DC supply rails, with nominal zener voltage 6.2 V (B2 grade), 400 mW power dissipation, dynamic resistance ≤40 Ω at 5 mA, and reverse leakage ≤2.0 µA at 5 V. It is used in reference voltage generation for analog sensors and microcontroller reset circuits.
For engineers reviewing the HZS6.2NB2TD-P-E datasheet, HZS6.2NB2TD-P-E pinout, HZS6.2NB2TD-P-E application, or HZS6.2NB2TD-P-E equivalent, key selection criteria include verified zener voltage tolerance (±0.3 V), low-temperature coefficient (−2.0 mV/°C), TO-236 (SMT) package compatibility, and suitability for high-speed automatic insertion on 5 mm-pitch PCBs.
Technical Context
This Zener diode operates in reverse breakdown mode with tightly controlled VZ and low dynamic impedance to maintain stable reference voltage under varying load and temperature conditions. Its epitaxial planar construction ensures consistent junction characteristics and low leakage across production lots.
The device is rated for continuous operation up to 200°C junction temperature and supports storage from −55°C to +175°C, making it suitable for industrial-grade embedded power regulation where thermal stability and long-term reliability are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 6.2 V nominal, 5.6–5.9 V min/max (B2 grade); enables accurate 6 V rail regulation with ±5% tolerance. |
| Power Dissipation (Pd) | 400 mW at Ta = 25°C; supports sustained operation in compact SMT layouts without forced cooling. |
| Dynamic Resistance (rd) | ≤40 Ω at IZ = 5 mA; minimizes output voltage variation under load current changes. |
| Reverse Leakage (IR) | ≤2.0 µA at VR = 5 V; preserves low quiescent current in battery-backed reference circuits. |
| Junction Temperature (Tj) | 200°C max; allows reliable operation in thermally constrained enclosures or near heat-generating components. |
| Temperature Coefficient | −2.0 mV/°C; provides predictable, linear VZ drift over industrial temperature range (−40°C to +125°C). |
Pinout & Package
Package: TO-236 (SMT), 3-pin molded plastic case with cathode band marking. Dimensions conform to JEDEC TO-236AB standard (2.9 × 1.3 × 0.9 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Anode) | Forward conduction terminal | Connected to ground or lower potential node in reverse-biased Zener configuration. |
| 2 (Cathode) | Zener breakdown terminal | Connected to regulated output node; carries stabilized voltage referenced to anode. |
| Cathode Band | Polarity indicator | Visible marking on package body identifying cathode; essential for correct orientation during automated placement. |
Key Features
| Feature | Design Value |
|---|---|
| Low dynamic impedance | ≤40 Ω at 5 mA enables tight regulation (<±10 mV) under ±1 mA load transients. |
| Wide zener voltage spectrum | 6.2 V B2 grade fits mid-range reference needs between 5 V logic and 12 V system rails. |
| High-speed auto-insertion compatibility | 5 mm pitch footprint supports pick-and-place at >15,000 CPH without lead deformation or misalignment. |
| Stable temperature coefficient | −2.0 mV/°C ensures <±30 mV total drift over −40°C to +125°C ambient range. |
Applications
| Industrial Sensor Reference | Microcontroller Reset Circuit |
|---|---|
Use Scenario: Providing stable 6.2 V reference for 12-bit ADCs in temperature and pressure transmitters. IC Role / Device Role / Timing Role: Zener voltage reference source for analog front-end biasing and ADC full-scale calibration. Use Value: Low rd and −2.0 mV/°C TC ensure <0.1% reference error across operating temperature range. | Use Scenario: Generating clean, noise-immune reset signal for ARM Cortex-M0+ MCUs in smart meters. IC Role / Device Role / Timing Role: Threshold detector that triggers POR (power-on reset) when VCC crosses 6.2 V ±5%. Use Value: ≤2.0 µA leakage prevents false resets during brown-out recovery and extends battery life. |
| Low-Power IoT Node Regulator | Automotive Body Control Module Reference |
Use Scenario: Stabilizing 6.2 V auxiliary rail for BLE SoC and EEPROM in wireless sensor nodes. IC Role / Device Role / Timing Role: Shunt regulator maintaining constant voltage despite 10–100 µA load variations. Use Value: 400 mW rating allows safe operation at 6.2 V × 50 mA = 310 mW, leaving 90 mW thermal margin. | Use Scenario: Supplying precise reference to LIN transceiver comparators in door module ECUs. IC Role / Device Role / Timing Role: Voltage reference for analog comparator thresholds in 12 V automotive systems. Use Value: 200°C Tj rating supports operation in engine bay-adjacent locations with minimal derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMSZ4687T1G | Zener voltage 6.2 V (±5%), Pd = 500 mW, rd = 60 Ω, TO-236 package | Higher power rating but higher dynamic resistance reduces regulation accuracy under fast load steps | Prefer when thermal headroom is critical and regulation precision is secondary |
| BZX84-C6V2 | Zener voltage 6.2 V (±5%), Pd = 300 mW, rd = 50 Ω, SOT-23 package | Lower power rating requires strict current limiting; same pinout but smaller thermal mass | Choose only for space-constrained designs where 300 mW suffices and layout allows tighter thermal management |
Compared with MMSZ4687T1G and BZX84-C6V2, the HZS6.2NB2TD-P-E delivers superior regulation fidelity (40 Ω vs. ≥50 Ω rd) within its 400 mW envelope, making it optimal for precision analog references where voltage stability outweighs absolute power headroom.
Availability
HZS6.2NB2TD-P-E is available at Aetrix Electronics and suitable for industrial sensor reference, microcontroller reset circuit, and low-power IoT node regulator applications requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.
Supply support for HZS6.2NB2TD-P-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ROHM Semiconductor is a Japanese semiconductor manufacturer specializing in analog, power, and sensor solutions for automotive, industrial, and consumer electronics.
The HZS Series is part of ROHM's precision Zener diode portfolio, engineered for stable voltage reference and shunt regulation in space-constrained, thermally demanding applications.
FAQ
What is the exact zener voltage range for HZS6.2NB2TD-P-E?
The HZS6.2NB2TD-P-E has a guaranteed zener voltage range of 5.6 V to 5.9 V at IZ = 5 mA and Ta = 25°C, corresponding to the B2 grade in the HZS6 family. This 6.2 V nominal rating is specified per ROHM datasheet ADE-208-120A(Z) Rev 1, Table on page 3. The device maintains this tolerance across its qualified operating temperature range.
Does HZS6.2NB2TD-P-E support surface-mount reflow soldering?
Yes, HZS6.2NB2TD-P-E uses a TO-236 (SMT) package compatible with standard lead-free reflow profiles, including peak temperatures up to 260°C for 10 seconds. Its epoxy-molded construction and lead finish meet J-STD-020 moisture sensitivity level (MSL) 1, eliminating bake requirements prior to assembly.
What is the maximum reverse leakage current for HZS6.2NB2TD-P-E at 5 V?
The maximum reverse leakage current for HZS6.2NB2TD-P-E is 2.0 µA at VR = 5 V and Ta = 25°C, as specified in the Electrical Characteristics table on page 3 of the official ROHM datasheet. This low leakage supports energy-efficient operation in always-on reference circuits and battery-powered systems.
Can HZS6.2NB2TD-P-E be used in place of a 6.2 V Zener in legacy through-hole designs?
No - HZS6.2NB2TD-P-E is a surface-mount TO-236 device and not mechanically or electrically compatible with through-hole packages like DO-35. Direct replacement would require PCB redesign. For through-hole equivalents, consult ROHM's HZS6 series through-hole variants (e.g., HZS6.2NB2D-P-E in DO-35), which share identical electrical specs but differ in package and mounting.
Is the temperature coefficient of HZS6.2NB2TD-P-E documented in the datasheet?
Yes, the temperature coefficient for HZS6.2NB2TD-P-E is −2.0 mV/°C, as shown in Figure 2 ("Temperature Coefficient vs. Zener Voltage") on page 6 of the ROHM datasheet ADE-208-120A(Z). This value applies specifically to the 6.2 V B2 grade and enables accurate prediction of VZ drift across −40°C to +125°C ambient conditions.
HZS6.2NB2TD-P-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS6.2NB2TD-P-E FAQ
1.How can I place an order for HZS6.2NB2TD-P-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS6.2NB2TD-P-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS6.2NB2TD-P-E reliable?
The price and inventory of HZS6.2NB2TD-P-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS6.2NB2TD-P-E is usually 5 days.
3.What payment methods are accepted for HZS6.2NB2TD-P-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS6.2NB2TD-P-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS6.2NB2TD-P-E?
HZS6.2NB2TD-P-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS6.2NB2TD-P-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS6.2NB2TD-P-E?
For technical support, including HZS6.2NB2TD-P-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS6.2NB2TD-P-E requirements.
6.How does Aetrix verify that HZS6.2NB2TD-P-E is sourced from the original manufacturer or authorized distributors?
All HZS6.2NB2TD-P-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS6.2NB2TD-P-E meets industry standards.
7.What is the process for return or replacement of HZS6.2NB2TD-P-E?
All HZS6.2NB2TD-P-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS6.2NB2TD-P-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS6.2NB2TD-P-E part is unused and in its original packaging.
Return procedure for HZS6.2NB2TD-P-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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