Renesas HZS6A1L-JTA-E

Overview

HZS6A1L-JTA-E from ROHM Semiconductor is a silicon epitaxial planar Zener diode designed for precision voltage regulation in stabilized power supplies, with a nominal zener voltage of 5.2–5.5 V, maximum power dissipation of 400 mW, dynamic resistance ≤40 Ω at 5 mA, and reverse current ≤5 µA at 2.0 V, deployed in low-noise DC biasing and reference circuits.

For engineers reviewing the HZS6A1L-JTA-E datasheet, HZS6A1L-JTA-E pinout, HZS6A1L-JTA-E application, or HZS6A1L-JTA-E equivalent, key selection criteria include zener voltage tolerance (±0.3 V), low-temperature coefficient (−2.0 to +2.0 mV/°C per Fig.2), junction temperature rating up to 200°C, and compatibility with 5 mm-pitch automated insertion.

Technical Context

This discrete Zener diode operates in reverse breakdown mode to maintain stable output voltage under varying load and input conditions. It features low leakage (≤5 µA at VR = 2.0 V) and low dynamic impedance (≤40 Ω at IZ = 5 mA), enabling high-accuracy regulation in low-power analog references and feedback networks.

The device uses silicon epitaxial planar construction for consistent breakdown characteristics and thermal stability. Its rated junction temperature of 200°C and storage range of −55°C to +175°C support operation in industrial and automotive ambient environments without derating below 125°C.

Key Specifications

Pinout & Package

Package: DO-35 (glass axial leaded, 2.5 mm diameter × 4.5 mm length, 5 mm pitch compatible).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with 1N4733A and BZX55C5V1, HZS6A1L-JTA-E delivers tighter zener voltage control (±0.3 V vs. ±5%), lower leakage (≤5 µA vs. ≥10 µA), and DO-35 mechanical compatibility with high-speed 5 mm pitch insertion-making it optimal for miniaturized industrial control and automotive cabin electronics where regulation accuracy and assembly efficiency are jointly constrained.

Availability

HZS6A1L-JTA-E is available at Aetrix Electronics and suitable for industrial sensor reference, low-power MCU reset circuit, and automotive cabin control panel applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for HZS6A1L-JTA-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ROHM Semiconductor is a Japanese semiconductor manufacturer specializing in analog, power, and sensor solutions for automotive, industrial, and consumer systems.

HZS6A1L-JTA-E belongs to ROHM's HZS Series of silicon epitaxial planar Zener diodes, engineered specifically for high-stability DC voltage regulation in space-constrained, thermally demanding power supply and reference applications.

FAQ

What is the exact zener voltage range specified for HZS6A1L-JTA-E?

HZS6A1L-JTA-E has a guaranteed zener voltage range of 5.2 V to 5.5 V at test current I_Z = 5 mA and ambient temperature 25°C. This ±0.3 V tolerance is tighter than standard 5% Zener diodes and supports high-accuracy voltage referencing in analog signal chains where drift must be minimized.

Does HZS6A1L-JTA-E support automated assembly processes?

Yes, HZS6A1L-JTA-E is explicitly designed for 5 mm-pitch high-speed automatic insertion, as confirmed in the official ROHM datasheet (ADE-208-120A(Z), Rev 1). Its DO-35 axial package dimensions and lead spacing comply with industry-standard pick-and-place and wave soldering equipment requirements.

What is the maximum power dissipation rating for HZS6A1L-JTA-E?

HZS6A1L-JTA-E has a maximum power dissipation (P_d) of 400 mW at ambient temperature 25°C. Derating is required above 25°C per the published power dissipation vs. ambient temperature curve (Fig.3), with zero dissipation at approximately 180°C ambient due to thermal cutoff.

How does the dynamic resistance of HZS6A1L-JTA-E affect regulation performance?

HZS6A1L-JTA-E exhibits dynamic resistance ≤40 Ω at I_Z = 5 mA, meaning its output voltage changes by no more than 200 mV for a 5 mA load step. This low r_d ensures tight regulation in feedback loops and reference buffers where line/load regulation stability is critical.

Is HZS6A1L-JTA-E suitable for automotive under-hood applications?

HZS6A1L-JTA-E supports junction temperatures up to 200°C and storage temperatures from −55°C to +175°C, meeting extended temperature requirements for non-engine-compartment automotive use (e.g., cabin control units, infotainment power rails). It is not AEC-Q200 qualified, so system-level validation is required for safety-critical functions.