Renesas HZS6A1TD-E
- Part No.:
- HZS6A1TD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS6A1TD-E.pdf
- Description:
- DIODE ZENER 0.4W
- Quantity:
- Payment:

- Shipping:

Inventory:52,500
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
HZS6A1TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies, with a nominal zener voltage of 6.3 V (min) to 6.6 V (max), 5 mA test current, 2.0 Ω typical dynamic resistance, and 400 mW maximum power dissipation in the MHD package.
For engineers reviewing the HZS6A1TD-E datasheet, HZS6A1TD-E pinout, HZS6A1TD-E application, or HZS6A1TD-E equivalent, this device serves as a low-leakage, low-impedance voltage reference for analog sensing circuits, microcontroller reset supervision, and biasing networks where stable 6.3–6.6 V clamping at ≤5 mA is required.
Technical Context
The HZS6A1TD-E operates as a two-terminal shunt regulator, maintaining a stable reverse-biased breakdown voltage across its cathode-anode terminals under controlled current conditions. Its 2.0 Ω dynamic resistance ensures minimal voltage variation over ±1 mA load shifts at IZ = 5 mA.
Designed for DC-stable operation only, it exhibits a negative temperature coefficient near 6.5 V (≈−2.5 mV/°C), requiring thermal derating above 25°C ambient per the Pd vs. Ta curve. Junction temperature must remain ≤200°C, with storage rated from −55°C to +175°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 6.3 V (min) to 6.6 V (max) at IZ = 5 mA - defines tight regulation window for 6.5 V nominal reference applications. |
| Dynamic Resistance (rd) | 2.0 Ω max at IZ = 5 mA - enables <10 mV output shift under ±1 mA current variation, critical for precision biasing. |
| Power Dissipation (Pd) | 400 mW max at Ta = 25°C - limits continuous operating current to ~63 mA at 6.3 V without heatsinking. |
| Reverse Current (IR) | 5 µA max at VR = 4.0 V - ensures negligible leakage in standby or high-impedance feedback paths. |
| Junction Temperature (Tj) | 200°C max - supports operation in industrial environments with adequate PCB copper area for thermal conduction. |
| Package | MHD (JEITA GRZZ0002ZC-A) - 5 mm pitch, axial-lead, phenolic board-mount package optimized for high-speed automatic insertion. |
Pinout & Package
Package: MHD - axial-lead, through-hole, 5 mm lead pitch, paper-phenol body (2.0 mm diameter × 26 mm length), 0.084 g typical mass, cathode band marked with lake blue color.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Breakdown voltage reference node | Connected to regulated voltage rail; reverse-biased terminal where stable VZ develops relative to anode. |
| 2 (Anode) | Reference ground/reference return | Typically tied to system ground or lower-potential node; completes current path during zener conduction. |
Key Features
| Feature | Design Value |
|---|---|
| Low dynamic impedance | 2.0 Ω max ensures <±5 mV regulation error over ±0.5 mA load transients in feedback loops. |
| Low leakage current | 5 µA max at 4.0 V enables use in ultra-low-power sensor biasing without signal path contamination. |
| Wide zener voltage range coverage | Part of HZS Series spanning 1.6–38 V - allows design reuse of MHD footprint across multiple supply rails. |
| High-reliability construction | Silicon planar process with 200°C junction rating supports extended life in industrial control enclosures. |
Applications
| Microcontroller Reset Circuit | Analog Sensor Biasing |
|---|---|
Use Scenario: Providing clean, temperature-stable 6.5 V threshold to a reset supervisor IC monitoring a 5 V logic rail. IC Role / Device Role / Timing Role: Shunt voltage reference defining precise reset assertion level independent of input ripple. Use Value: Eliminates need for external resistor divider; 2.0 Ω rd prevents threshold drift during brown-out detection windows. |
Use Scenario: Supplying stable bias voltage to bridge-based pressure sensors in HVAC control modules. IC Role / Device Role / Timing Role: Low-leakage voltage reference source for Wheatstone bridge excitation. Use Value: 5 µA max IR avoids loading high-impedance sensor outputs; tight VZ tolerance maintains measurement linearity. |
| Linear Regulator Error Amplifier Reference | Overvoltage Clamp in 12 V Automotive Subsystem |
Use Scenario: Setting reference input for TL431-type error amplifier in adjustable 3.3 V LDO with external feedback. IC Role / Device Role / Timing Role: Precision DC reference replacing resistive divider to improve load regulation. Use Value: 6.3–6.6 V range matches common TL431 VREF scaling requirements while reducing component count. |
Use Scenario: Clamping transient spikes on 12 V infotainment power rail during load dump events. IC Role / Device Role / Timing Role: Fast-reacting shunt protector absorbing short-duration surges up to 400 mW. Use Value: 400 mW Pd and 200°C Tj rating allow brief energy absorption without thermal runaway in non-repetitive fault conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4734A (ON Semiconductor) | Zener voltage 5.6 V ±5%, rd = 5 Ω, Pd = 1 W, DO-41 package | Higher power but looser VZ tolerance and higher impedance - suitable for less critical 5.6 V references. | Select when higher surge energy handling is needed and 5.6 V suffices; requires PCB layout change due to DO-41 footprint. |
| BZX55C6V2 (Vishay) | Zener voltage 6.2 V ±5%, rd = 10 Ω, Pd = 500 mW, DO-35 package | Wider VZ tolerance and higher impedance - acceptable for general-purpose 6.2 V clamping with relaxed accuracy. | Choose for cost-sensitive consumer designs where 6.2 V and ±5% tolerance meet spec; incompatible MHD mounting. |
Compared with 1N4734A and BZX55C6V2, the HZS6A1TD-E delivers tighter VZ tolerance (±2.4% vs. ±5%), lower dynamic resistance (2.0 Ω vs. ≥5 Ω), and MHD-compatible 5 mm pitch - making it preferable for space-constrained industrial PCBs requiring stable 6.5 V references without layout redesign.
Availability
HZS6A1TD-E is available at Aetrix Electronics and suitable for industrial control systems, automotive body electronics, test equipment power rails, and embedded sensor modules requiring stable component supply with consistent MHD packaging and tight zener voltage matching.
Supply support for HZS6A1TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.
The HZS Series was developed as a family of precision silicon planar Zener diodes targeting stabilized DC power supply regulation, offering low leakage, low impedance, and standardized MHD packaging for automated manufacturing.
FAQ
What is the exact zener voltage range specified for HZS6A1TD-E?
The HZS6A1TD-E has a guaranteed zener voltage range of 6.3 V minimum to 6.6 V maximum when tested at IZ = 5 mA and Ta = 25°C. This 300 mV span reflects Grade A1 tolerance within the HZS6 family and is confirmed in the Renesas REJ03G0184-0500 datasheet, page 3.
Does HZS6A1TD-E support surface-mount assembly?
No, the HZS6A1TD-E uses the MHD axial-lead through-hole package (JEITA GRZZ0002ZC-A) with 5 mm lead pitch and is designed for wave soldering or high-speed automatic insertion into plated-through holes. It is not compatible with reflow or pick-and-place SMT processes.
What is the maximum allowable reverse current before breakdown in HZS6A1TD-E?
The HZS6A1TD-E specifies a maximum reverse current (IR) of 5 µA at VR = 4.0 V, measured at Ta = 25°C. This low leakage ensures minimal parasitic loading in high-impedance reference or bias networks where signal integrity is critical.
Can HZS6A1TD-E be used in automotive under-hood applications?
The HZS6A1TD-E is rated for storage from −55°C to +175°C and junction operation up to 200°C, but Renesas classifies it as "Standard" quality grade - intended for office equipment, industrial robots, and test gear, not automotive powertrain or safety-critical systems. Use requires validation per AEC-Q101 if deployed in automotive contexts.
How does the dynamic resistance of HZS6A1TD-E affect its performance in a voltage reference circuit?
With a maximum dynamic resistance of 2.0 Ω at IZ = 5 mA, the HZS6A1TD-E introduces less than 2 mV of output variation for every 1 mA change in zener current. This low rd stabilizes reference voltage against load-induced current fluctuations, improving accuracy in precision analog circuits using HZS6A1TD-E.
HZS6A1TD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS6A1TD-E FAQ
1.How can I place an order for HZS6A1TD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS6A1TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS6A1TD-E reliable?
The price and inventory of HZS6A1TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS6A1TD-E is usually 5 days.
3.What payment methods are accepted for HZS6A1TD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS6A1TD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS6A1TD-E?
HZS6A1TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS6A1TD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS6A1TD-E?
For technical support, including HZS6A1TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS6A1TD-E requirements.
6.How does Aetrix verify that HZS6A1TD-E is sourced from the original manufacturer or authorized distributors?
All HZS6A1TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS6A1TD-E meets industry standards.
7.What is the process for return or replacement of HZS6A1TD-E?
All HZS6A1TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS6A1TD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS6A1TD-E part is unused and in its original packaging.
Return procedure for HZS6A1TD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZS6A1TD-E Tags

-
MMBZ5240B-7-F
Diodes Incorporated

-
BZT52C5V6T-7
Diodes Incorporated

-
MMSZ5231B-7-F
Diodes Incorporated

-
BZT52C15-7-F
Diodes Incorporated

-
BZX84C3V3LT1G
onsemi

-
MMSZ5245BS-7-F
Diodes Incorporated

-
MMSZ4682T1G
onsemi

-
BZT52C15S-7-F
Diodes Incorporated

-
MM5Z5V1ST1G
onsemi

-
SMAJ4744A-TP
Micro Commercial Co

-
BZT52C3V6LP-7
Diodes Incorporated

-
SMAZ12-13-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

