Renesas HZS6B1L-JTA-E

Overview

HZS6B1L-JTA-E from ROHM Semiconductor is a silicon epitaxial planar Zener diode designed for precision voltage regulation in stabilized power supplies, with a nominal zener voltage of 5.5–5.8 V, maximum power dissipation of 400 mW, dynamic resistance ≤40 Ω at 5 mA, and reverse current ≤5 µA at 2.0 V. It supports high-speed automatic insertion on 5 mm-pitch PCBs in industrial power management circuits.

For engineers reviewing the HZS6B1L-JTA-E datasheet, HZS6B1L-JTA-E pinout, HZS6B1L-JTA-E application, or HZS6B1L-JTA-E equivalent, key selection criteria include zener voltage tolerance (±0.3 V), low temperature coefficient (≈+2.0 mV/°C near 5.7 V), junction temperature rating up to 200°C, and compatibility with through-hole mounting in compact power rail stabilization.

Technical Context

This Zener diode operates in reverse breakdown mode with DC-tested characteristics, delivering stable reference voltage under fixed-current biasing. Its epitaxial planar structure ensures low leakage (≤5 µA) and low dynamic impedance (≤40 Ω), critical for noise-sensitive analog rails and feedback loops in linear regulators.

The device is optimized for ambient temperatures from –55°C to +175°C and exhibits predictable voltage drift across temperature, with a positive temperature coefficient near 5.7 V enabling compensation in multi-diode references. Power derating follows a linear curve down to zero dissipation at 180°C ambient.

Key Specifications

Pinout & Package

Package: DO-35 glass axial leaded package (2.5 mm diameter × 4.5 mm length), lead pitch 5 mm, RoHS-compliant matte tin plating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with 1N4734A and BZX55-C5V6, HZS6B1L-JTA-E offers tighter V_Z tolerance (±0.3 V vs. ±5%), identical DO-35 footprint, and optimized low-leakage performance for precision analog biasing-making it preferable in space-constrained, accuracy-critical 5 V reference designs.

Availability

HZS6B1L-JTA-E is available at Aetrix Electronics and suitable for industrial power supply reference, linear regulator feedback node, and automotive body control module rail clamp applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for HZS6B1L-JTA-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ROHM Semiconductor is a Japanese semiconductor manufacturer specializing in analog, power, and sensor solutions for automotive, industrial, and consumer systems.

HZS Series Zener diodes are part of ROHM's precision discrete portfolio, engineered for stable voltage reference and rail clamping in high-reliability power management applications where low leakage and tight V_Z tolerance are essential.

FAQ

What is the exact zener voltage range for HZS6B1L-JTA-E?

HZS6B1L-JTA-E has a guaranteed zener voltage range of 5.5 V to 5.8 V at test current I_Z = 5 mA, corresponding to Grade B1 in the HZS6 family. This ±0.3 V window enables accurate 5 V rail regulation without external trimming. The value is DC-tested per ROHM specification ADE-208-120A(Z) Rev 1, and applies across the full operating temperature range.

Is HZS6B1L-JTA-E compatible with automated through-hole insertion equipment?

Yes, HZS6B1L-JTA-E is explicitly designed for 5 mm-pitch high-speed automatic insertion, as confirmed in the "Features" section of its official datasheet. Its DO-35 axial package has standardized lead spacing and mechanical dimensions that meet IPC-7351 requirements for automated placement and wave soldering, eliminating manual handling in high-volume production.

What is the maximum reverse current specification for HZS6B1L-JTA-E?

The maximum reverse current for HZS6B1L-JTA-E is 5 µA at V_R = 2.0 V and T_a = 25°C, per Electrical Characteristics table in ADE-208-120A(Z). This low leakage supports high-impedance bias networks and minimizes quiescent power loss in always-on reference circuits, especially critical in battery-backed or energy-harvesting systems using HZS6B1L-JTA-E.

Does HZS6B1L-JTA-E have a specified temperature coefficient?

Yes, HZS6B1L-JTA-E exhibits a positive temperature coefficient near +2.0 mV/°C, consistent with zener diodes in the 5–6 V range as shown in Figure 2 of the HZS Series datasheet. This value is derived from the V_Z vs. temperature curve for HZS6B2 (adjacent grade), and applies directly to HZS6B1L-JTA-E due to shared epitaxial process and grading.

Can HZS6B1L-JTA-E replace a standard 5.6 V Zener like 1N4734A in existing designs?

HZS6B1L-JTA-E can serve as a functional alternative to 1N4734A in 5 V reference applications, but requires validation of thermal limits: while both are DO-style packages, HZS6B1L-JTA-E is rated at 400 mW versus 1 W for 1N4734A. Its tighter V_Z tolerance (±0.3 V vs. ±5%) improves accuracy, but lower power rating means it must not exceed 400 mW in the target circuit layout.