Renesas HZS6B1TA-E

Overview

HZS6B1TA-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies, with a nominal zener voltage of 6.1–6.4 V, 400 mW power dissipation, and dynamic resistance of 2.0 Ω at 5 mA test current. It serves as a shunt reference in voltage monitoring, overvoltage protection, and biasing circuits for industrial control and consumer electronics.

For engineers reviewing the HZS6B1TA-E datasheet, HZS6B1TA-E pinout, HZS6B1TA-E application, or HZS6B1TA-E equivalent, this device is evaluated for use in fixed-voltage reference design, low-current regulation, thermal-stable bias networks, and DC rail stabilization where tight zener tolerance (±0.3 V), low leakage (<5 µA at 0.5 V), and consistent rd performance are required.

Technical Context

The HZS6B1TA-E operates as a two-terminal shunt regulator, conducting reverse current above its specified breakdown threshold to clamp voltage across connected loads. Its silicon planar construction ensures stable junction temperature behavior up to 200°C and low temperature coefficient near zero crossing (~0 mV/°C at ~6 V).

Rated for 400 mW total power dissipation at 25°C ambient, it exhibits graded zener voltage tolerance (B1 grade: 6.1–6.4 V), 5 mA nominal test current, and 2.0 Ω dynamic impedance - enabling predictable regulation under varying load conditions without external feedback circuitry.

Key Specifications

Pinout & Package

Package: MHD (Mini-High-Density), axial-leaded, 2-pin through-hole package with cathode band marking; dimensions per JEITA code GRZZ0002ZC-A (L = 26.0 mm, φD = 2.0 mm, E = 2.4 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with 1N4734A and BZX55C6V2, the HZS6B1TA-E delivers tighter voltage tolerance (±0.15 V vs. ±5%), lower dynamic resistance (2.0 Ω vs. ≥5 Ω), and MHD packaging optimized for automated assembly - making it preferred for space-constrained, high-stability applications requiring repeatable 6.3 V reference performance.

Availability

HZS6B1TA-E is available at Aetrix Electronics and suitable for industrial power monitoring, consumer audio biasing, USB-C PD adapter feedback, and smart meter reference calibration requiring stable component supply, long-term parametric consistency, and RoHS-compliant manufacturing.

Supply support for HZS6B1TA-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.

The HZS Series was developed as a family of precision silicon planar Zener diodes targeting stable, low-drift voltage references in cost-sensitive, high-volume power management applications - emphasizing manufacturability, thermal robustness, and automated assembly compatibility.

FAQ

What is the exact zener voltage range specified for HZS6B1TA-E?

The HZS6B1TA-E has a guaranteed zener voltage range of 6.1 V to 6.4 V when tested at 5 mA reverse current and 25°C ambient temperature. This B1 grade tolerance (±0.15 V) is confirmed in the Renesas REJ03G0184-0500 datasheet, Page 3, and reflects tighter control than standard ±5% Zeners - critical for applications requiring predictable clamping without post-production trimming. The HZS6B1TA-E achieves this via silicon planar process optimization and binning.

Does HZS6B1TA-E support operation at elevated temperatures?

Yes, the HZS6B1TA-E is rated for junction temperatures up to 200°C and storage temperatures from −55°C to +175°C. Its silicon planar construction provides stable zener characteristics across this full range, with temperature coefficient near zero at ~6.3 V (see Fig.2, Page 5). For sustained operation above 85°C ambient, derating per Fig.3 (Page 5) applies - e.g., ~240 mW max at 70°C ambient. This makes HZS6B1TA-E suitable for enclosed power supplies and industrial controllers.

What is the dynamic resistance of HZS6B1TA-E and why does it matter?

The HZS6B1TA-E has a dynamic resistance (r_d) of 2.0 Ω measured at 5 mA zener current. This low value means the output voltage changes only ~2 mV per 1 mA load current variation - essential for maintaining regulation accuracy in sensitive analog circuits like sensor biasing or ADC references. Higher-r_d Zeners (e.g., >5 Ω) would introduce unacceptable ripple or drift under similar load shifts, degrading system-level precision.

Is HZS6B1TA-E compatible with automated PCB assembly processes?

Yes, the HZS6B1TA-E uses the MHD package (JEITA code GRZZ0002ZC-A) with 5 mm lead pitch and standardized axial geometry - explicitly designed for high-speed automatic insertion equipment. Its mass (0.084 g) and mechanical tolerances comply with IPC-J-STD-020 for through-hole placement. No retooling or adapter fixtures are needed when integrating HZS6B1TA-E into existing wave-solder or selective solder production lines.

How does HZS6B1TA-E compare to other HZS-series variants like HZS6B2 or HZS6C3?

The HZS6B1TA-E belongs to the HZS6 family (6.1–6.4 V nominal), where "B1" denotes its specific voltage grade. HZS6B2 offers 6.3–6.6 V, and HZS6C3 offers 6.1–6.4 V with tighter test conditions (1 mA instead of 5 mA). All share identical MHD packaging, 400 mW rating, and 2.0 Ω r_d, but differ in V_Z bounds and test current - making HZS6B1TA-E optimal for designs targeting 6.3 V with 5 mA operating point. Selection depends strictly on required V_Z window and test condition alignment.