Renesas HZS6B3LTD-E

Overview

HZS6B3LTD-E from Renesas Electronics is a silicon planar Zener diode optimized for low-noise voltage reference and stabilization in precision analog circuits, with a nominal zener voltage of 5.7–6.0 V, dynamic resistance of 80 Ω at 0.5 mA, and maximum power dissipation of 400 mW. It features low leakage current (≤1 μA at VR = 2.0 V), low zener impedance, and is qualified for standard-grade industrial applications including stabilized power supplies and sensor biasing.

For engineers reviewing the HZS6B3LTD-E datasheet, HZS6B3LTD-E pinout, HZS6B3LTD-E application, or HZS6B3LTD-E equivalent, this device is selected for noise-sensitive voltage regulation where zener voltage stability, temperature coefficient control, and consistent low-impedance behavior under low-current bias are critical design requirements.

Technical Context

The HZS6B3LTD-E employs a silicon planar junction structure to achieve reduced flicker noise-approximately 1/3 to 1/10 that of the legacy HZ series-making it suitable for low-drift reference designs. Its zener voltage is specified at 5.7–6.0 V with test current IZ = 0.5 mA, and exhibits a typical temperature coefficient near zero crossing in the 5–6 V range.

Designed for surface-mount compatibility with 5 mm-pitch high-speed automatic insertion, the device uses an MHD package (JEITA code GRZZ0002ZC-A) with axial lead configuration, cathode band marking, and operates within a junction temperature range of −55°C to +200°C. It is not radiation-hardened and is rated for Standard quality grade per Renesas classification.

Key Specifications

Pinout & Package

MHD package: axial-leaded, cylindrical glass-body diode with cathode band marking; overall length 26.0 mm, body diameter 2.0 mm, lead diameter 0.4 mm; designed for through-hole mounting and automated insertion.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with 1N4734A and BZX84-C5V6, the HZS6B3LTD-E delivers verified low-noise performance, tighter low-current regulation, and broader temperature capability-making it the preferred choice for precision analog systems where reference integrity directly impacts measurement fidelity.

Availability

HZS6B3LTD-E is available at Aetrix Electronics and suitable for industrial power monitoring, medical sensor biasing, test equipment reference, and automotive cabin control requiring stable component supply, long-lifecycle continuity, and traceable sourcing.

Supply support for HZS6B3LTD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and SoC solutions for industrial, automotive, and infrastructure markets.

The HZS-L Series was developed by Renesas to address demand for low-noise, low-leakage Zener diodes in precision analog signal chains-particularly for voltage references in data acquisition, sensor conditioning, and calibration-critical instrumentation.

FAQ

What is the zener voltage tolerance of HZS6B3LTD-E?

The HZS6B3LTD-E has a zener voltage range of 5.7 V to 6.0 V at I_Z = 0.5 mA, representing a ±0.15 V absolute tolerance. This tight window supports accurate voltage setting in low-power reference circuits without trimming. The HZS6B3LTD-E is binned to meet this specification under DC test conditions per Renesas REJ03G0166-0300 Rev.3.00.

Does HZS6B3LTD-E support high-temperature operation?

Yes, the HZS6B3LTD-E is rated for junction temperatures from −55°C to +200°C and storage temperatures from −55°C to +175°C. Its MHD package and silicon planar construction enable reliable operation in under-hood automotive modules and industrial motor drive controls where ambient temperatures exceed 100°C. The HZS6B3LTD-E maintains regulation integrity across this full range when derated per Fig.3 in the datasheet.

Is HZS6B3LTD-E suitable for low-noise applications?

Yes-the HZS6B3LTD-E is explicitly characterized for low-noise performance, with diode noise approximately 1/3 to 1/10 that of the legacy HZ series. This is achieved via optimized planar junction processing and is validated in Renesas' noise measurement methodology. For low-noise applications such as precision ADC references or photodiode biasing, the HZS6B3LTD-E provides measurable SNR improvement over generic Zeners.

What is the maximum reverse leakage current for HZS6B3LTD-E?

The HZS6B3LTD-E guarantees reverse leakage current ≤1 μA at V_R = 2.0 V and T_a = 25°C. This ultra-low leakage supports energy-efficient designs, especially in battery-powered sensor nodes where standby current must remain below 10 μA. The HZS6B3LTD-E achieves this while maintaining stable 5.85 V nominal regulation-critical for long-term calibration retention.

What package type does HZS6B3LTD-E use?

HZS6B3LTD-E uses the MHD package (JEITA code GRZZ0002ZC-A), a glass-encapsulated axial-leaded diode with 2.0 mm body diameter, 26 mm lead length, and cathode band marking. It is optimized for 5 mm-pitch high-speed automatic insertion and complies with Renesas' standard through-hole assembly guidelines. The HZS6B3LTD-E's MHD footprint ensures mechanical and thermal compatibility with legacy HZ-series board layouts.