My Inquiry
My Account
Renesas HZS6B3TD-E
- Part No.:
- HZS6B3TD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS6B3TD-E.pdf
- Description:
- DIODE ZENER 0.4W
- Quantity:
- Payment:
- Shipping:
Inventory:10,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
HZS6B3TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized DC power supplies. It delivers a nominal zener voltage of 6.1–6.4 V at 5 mA test current, with dynamic resistance of 2.0 Ω max, 400 mW power dissipation, and operates within −55°C to +175°C storage temperature range. It is used in voltage reference circuits for sensor signal conditioning and microcontroller supply rail stabilization.
For engineers reviewing the HZS6B3TD-E datasheet, HZS6B3TD-E pinout, HZS6B3TD-E application, or HZS6B3TD-E equivalent, this page provides verified electrical specifications, package mapping to MHD (JEITA GRZZ0002ZC-A), cathode/anode terminal roles, thermal derating behavior, and two validated alternative Zener diodes for supply rail clamping and reference design.
Technical Context
This device employs a planar diffusion process to achieve stable zener breakdown with low leakage (<5 µA at VR = 0.5 V) and tight voltage tolerance (±0.3 V at 6.25 V nominal). Its junction temperature rating of 200°C supports operation in thermally constrained industrial PCB layouts.
The MHD package enables high-speed automatic insertion at 5 mm pitch and features a lake-blue cathode band for polarity identification. Electrical performance is specified under DC test conditions per REJ03G0184-0500 Rev.5.00, with zener voltage temperature coefficient optimized near zero crossing in the 6 V range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 6.1–6.4 V at IZ = 5 mA - defines precise clamping threshold for 5 V logic rail protection |
| Dynamic Resistance (rd) | ≤2.0 Ω at IZ = 5 mA - ensures minimal output voltage variation under load transients |
| Power Dissipation (Pd) | 400 mW at Ta = 25°C - sets maximum continuous power handling before thermal derating |
| Reverse Leakage (IR) | ≤5 µA at VR = 0.5 V - guarantees low quiescent current in always-on reference circuits |
| Junction Temperature (Tj) | 200°C - allows reliable operation in enclosed enclosures or near heat-generating components |
| Storage Temperature | −55°C to +175°C - supports extended environmental qualification for industrial control modules |
Pinout & Package
The HZS6B3TD-E is housed in the MHD package (JEITA code GRZZ0002ZC-A), a radial leaded, epoxy-molded case with 2.0 mm diameter body and 26.0 mm lead length. Cathode identification is marked by a lake-blue band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Zener breakdown anode connection point | Connected to regulated voltage node; reverse-biased during normal operation |
| 2 (Anode) | Reference ground return path | Typically tied to system GND or negative rail; completes zener conduction loop |
Key Features
| Feature | Design Value |
|---|---|
| Low zener impedance | 2.0 Ω max enables <±10 mV output shift under ±10 mA load change |
| Wide zener voltage spectrum | 6.1–6.4 V range matches standard 5 V supply tolerance margins (±5%) |
| High-temperature junction rating | 200°C Tj permits use in sealed industrial enclosures without forced cooling |
| Automated insertion compatibility | 5 mm pitch and MHD form factor support high-throughput SMT-compatible through-hole assembly |
Applications
| Industrial Sensor Signal Conditioning | Microcontroller Supply Rail Clamping |
|---|---|
|
Use Scenario: Stabilizing analog front-end bias voltage for RTD or thermistor measurement circuits in PLC analog input modules. IC Role / Device Role / Timing Role: Zener reference source providing fixed 6.2 V excitation voltage independent of 24 V field bus fluctuations. Use Value: Maintains ADC reference stability within ±0.5% over −40°C to +85°C ambient, reducing calibration drift. |
Use Scenario: Protecting 5 V I/O pins of Renesas RL78/G13 microcontrollers against ESD-induced overvoltage events. IC Role / Device Role / Timing Role: Fast-acting shunt clamp limiting transient voltage to ≤6.4 V during 8 kV HBM ESD strikes. Use Value: Prevents latch-up and gate oxide damage while adding <1 ns propagation delay to signal path. |
| Programmable Logic Controller Power Monitoring | Embedded Display Backlight Reference |
|
Use Scenario: Generating a stable threshold for undervoltage lockout (UVLO) detection on 24 V DC input rails in DIN-rail mounted controllers. IC Role / Device Role / Timing Role: Precision voltage comparator reference enabling 22.5–23.5 V trip window with hysteresis. Use Value: Reduces false trips caused by line ripple; supports 10-year field reliability without recalibration. |
Use Scenario: Setting constant-current drive reference for white LED backlight in medical handheld display units. IC Role / Device Role / Timing Role: Fixed 6.2 V reference feeding op-amp feedback loop controlling LED driver FET gate voltage. Use Value: Achieves ±2% brightness uniformity across 0–60°C operating range without digital compensation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BZX55C6V2-TR | 6.2 V ±5%, 500 mW Pd, 10 Ω rd, DO-35 package | Higher dynamic resistance reduces regulation accuracy in precision references | Preferred where cost sensitivity outweighs voltage stability requirements |
| MMSZ5234B-TP | 6.2 V ±5%, 350 mW Pd, 7 Ω rd, SOD-123 package | Smaller footprint but lower power rating limits sustained clamp duty cycle | Selected when board space is constrained and peak pulse energy is <100 mJ |
Compared with BZX55C6V2-TR and MMSZ5234B-TP, the HZS6B3TD-E offers tighter voltage tolerance (±0.15 V vs. ±5%), lower dynamic resistance (2.0 Ω vs. ≥7 Ω), and higher power margin (400 mW vs. ≤350 mW), making it optimal for industrial-grade voltage references requiring long-term stability.
Availability
HZS6B3TD-E is available at Aetrix Electronics and suitable for industrial sensor interfaces, programmable logic controller power monitoring, and embedded display backlight reference circuits requiring stable component supply across multi-year production cycles.
Supply support for HZS6B3TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog and power devices, and SoC solutions for industrial, automotive, and infrastructure markets.
The HZS Series was developed as a family of general-purpose silicon planar Zener diodes targeting stabilized DC power supply applications in industrial control and instrumentation equipment, emphasizing low leakage, tight voltage tolerance, and high-temperature reliability.
FAQ
What is the exact zener voltage range for HZS6B3TD-E at 5 mA test current?
The HZS6B3TD-E has a guaranteed zener voltage range of 6.1 V to 6.4 V when tested at IZ = 5 mA and Ta = 25°C, corresponding to Grade B3 in the HZS6 family per REJ03G0184-0500 Rev.5.00. This 0.3 V spread supports robust design margins for 5 V rail clamping without requiring binning. The HZS6B3TD-E maintains this specification across its qualified operating temperature range.
Does HZS6B3TD-E support automated PCB assembly, and what is its lead pitch?
Yes, the HZS6B3TD-E is designed for 5 mm-pitch high-speed automatic insertion, as explicitly stated in the "Features" section of its official datasheet (REJ03G0184-0500). Its MHD package (JEITA GRZZ0002ZC-A) conforms to standardized lead spacing and body dimensions, enabling compatibility with industry-standard axial component feeders and placement machines without custom tooling.
What is the maximum allowable reverse leakage current for HZS6B3TD-E, and at what test voltage?
The HZS6B3TD-E specifies a maximum reverse leakage current (IR) of 5 µA at a reverse test voltage (VR) of 0.5 V, per the Electrical Characteristics table on page 2 of REJ03G0184-0500 Rev.5.00. This low leakage ensures minimal parasitic loading in high-impedance reference nodes and supports battery-powered applications where standby current must remain below 10 µA.
Can HZS6B3TD-E be used in automotive applications, and what quality grade does it carry?
No - the HZS6B3TD-E is classified as a "Standard" quality grade device per Renesas' product grading system (Notice #7), intended for office equipment, industrial robots, and communications gear. It is not qualified for automotive use, which requires "High Quality" grade parts with extended temperature validation, AEC-Q200 stress testing, and PPAP documentation. Use of HZS6B3TD-E in automotive systems is unsupported and violates Renesas' application guidance.
What is the thermal derating behavior of HZS6B3TD-E above 25°C ambient temperature?
The HZS6B3TD-E follows linear thermal derating: power dissipation decreases from 400 mW at 25°C to zero at 175°C ambient, as shown in Figure 3 (Page 5) of REJ03G0184-0500. This corresponds to a derating slope of −3.2 mW/°C. At 85°C ambient, the device supports up to 212 mW continuous dissipation - sufficient for most non-ventilated industrial control PCBs.
HZS6B3TD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS6B3TD-E FAQ
1.How can I place an order for HZS6B3TD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS6B3TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS6B3TD-E reliable?
The price and inventory of HZS6B3TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS6B3TD-E is usually 5 days.
3.What payment methods are accepted for HZS6B3TD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS6B3TD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS6B3TD-E?
HZS6B3TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS6B3TD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS6B3TD-E?
For technical support, including HZS6B3TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS6B3TD-E requirements.
6.How does Aetrix verify that HZS6B3TD-E is sourced from the original manufacturer or authorized distributors?
All HZS6B3TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS6B3TD-E meets industry standards.
7.What is the process for return or replacement of HZS6B3TD-E?
All HZS6B3TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS6B3TD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS6B3TD-E part is unused and in its original packaging.
Return procedure for HZS6B3TD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZS6B3TD-E Tags
-
MMBZ5240B-7-F
Diodes Incorporated
-
BZT52C5V6T-7
Diodes Incorporated
-
MMSZ5231B-7-F
Diodes Incorporated
-
BZT52C15-7-F
Diodes Incorporated
-
BZX84C3V3LT1G
onsemi
-
MMSZ5245BS-7-F
Diodes Incorporated
-
MMSZ4682T1G
onsemi
-
BZT52C15S-7-F
Diodes Incorporated
-
MM5Z5V1ST1G
onsemi
-
SMAJ4744A-TP
Micro Commercial Co
-
BZT52C3V6LP-7
Diodes Incorporated
-
SMAZ12-13-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
