Renesas HZS6C1TA-E

Overview

HZS6C1TA-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized DC power supplies. It delivers a nominal zener voltage of 6.1–6.4 V at 5 mA test current, with dynamic resistance of 2.0 Ω max, 400 mW power dissipation, and operates across −55°C to +175°C storage temperature - used in voltage reference circuits for industrial sensor signal conditioning.

For engineers reviewing the HZS6C1TA-E datasheet, HZS6C1TA-E pinout, HZS6C1TA-E application, or HZS6C1TA-E equivalent, key selection criteria include verified zener voltage tolerance (±0.3 V), low dynamic impedance under 5 mA bias, thermal stability up to 200°C junction temperature, and compatibility with 5 mm-pitch automated insertion in compact PCB layouts.

Technical Context

The HZS6C1TA-E employs a silicon planar junction structure optimized for stable reverse breakdown behavior under DC bias. Its zener voltage is specified at I_Z = 5 mA with tight min/max bounds (6.1 V–6.4 V), and it exhibits a temperature coefficient near zero in the 6 V range - critical for reference stability across ambient variations.

Designed for use in shunt-regulator topologies, the device supports continuous operation at P_d = 400 mW with derating above 25°C ambient, and features low leakage (<1 µA at V_R = 0.5 V) and robust junction temperature capability (T_j = 200°C), enabling reliable performance in thermally constrained embedded power rails.

Key Specifications

Pinout & Package

Package: MHD (Mini-High-Density) surface-mount package per JEITA code GRZZ0002ZC-A; dimensions L = 26.0 mm, φD = 2.0 mm, E = 2.4 mm; mass ≈ 0.084 g; cathode band marked in lake blue.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with BZX55C6V2 and MMSZ4686, the HZS6C1TA-E offers superior voltage tolerance (±0.15 V vs. ±5%), lower dynamic resistance (2.0 Ω vs. ≥7 Ω), and higher thermal resilience (200°C T_j vs. 150°C), making it preferred for industrial-grade voltage references where long-term stability and thermal robustness are critical.

Availability

HZS6C1TA-E is available at Aetrix Electronics and suitable for industrial sensor signal conditioning, embedded microcontroller reset circuits, and programmable logic controller (PLC) analog input protection requiring stable component supply and long-lifecycle support.

Supply support for HZS6C1TA-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.

The HZS Series was developed as a family of precision silicon planar Zener diodes targeting cost-sensitive yet thermally demanding industrial power regulation and voltage reference applications - emphasizing manufacturability, reliability, and wide V_Z coverage.

FAQ

What is the exact zener voltage range specified for HZS6C1TA-E?

The HZS6C1TA-E has a guaranteed zener voltage range of 6.1 V to 6.4 V when tested at I_Z = 5 mA and T_a = 25°C. This 0.3 V tolerance reflects Grade C3 specification within the HZS6 family and is tighter than standard ±5% Zener diodes, supporting high-accuracy reference designs without post-calibration trimming. The HZS6C1TA-E maintains this specification across its qualified operating conditions.

Does HZS6C1TA-E support automated PCB assembly?

Yes, the HZS6C1TA-E uses the MHD package with 5 mm pitch, explicitly designed for high-speed automatic insertion per the datasheet. Its standardized lead spacing and mechanical profile allow direct integration into pick-and-place workflows without custom tooling or rework. The lake-blue cathode band also enables optical verification during AOI inspection, ensuring correct orientation in volume manufacturing of HZS6C1TA-E-equipped boards.

What is the maximum junction temperature rating for HZS6C1TA-E?

The HZS6C1TA-E is rated for a maximum junction temperature (T_j) of 200°C, significantly exceeding typical 150°C limits for general-purpose Zener diodes. This enables reliable operation in thermally aggressive environments such as motor drive control modules or enclosed industrial power supplies where ambient temperatures exceed 100°C. Derating curves in the HZS6C1TA-E datasheet confirm usable power dissipation up to 125°C ambient before reaching T_j = 200°C.

How does the dynamic resistance of HZS6C1TA-E impact voltage regulation performance?

The HZS6C1TA-E specifies dynamic resistance (r_d) ≤2.0 Ω at I_Z = 5 mA, meaning a 1 mA change in zener current produces ≤2 mV output variation. This low impedance directly translates to superior line and load regulation in shunt configurations - for example, limiting output drift to <±5 mV under ±2.5 mA load steps. Such performance makes the HZS6C1TA-E suitable for precision analog references where competing diodes with r_d >5 Ω would introduce unacceptable error.

Is HZS6C1TA-E RoHS compliant and halogen-free?

Yes, the HZS6C1TA-E complies with the EU RoHS Directive (2011/65/EU) and is halogen-free per Renesas' environmental specifications. Material declarations confirm lead-free terminations and absence of brominated flame retardants (BFRs), chlorinated flame retardants (CFRs), and antimony trioxide. Compliance documentation is available through Renesas' official product portal and applies to all production lots of HZS6C1TA-E shipped after October 2007.