My Inquiry
My Account
Renesas HZS6C2JTD-E
- Part No.:
- HZS6C2JTD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS6C2JTD-E.pdf
- Description:
- DIODE ZENER
- Quantity:
- Payment:
- Shipping:
Inventory:5,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
HZS6C2JTD-E from ROHM Semiconductor is a silicon epitaxial planar Zener diode designed for precision voltage regulation in stabilized power supplies, with a nominal zener voltage of 6.1–6.4 V, maximum power dissipation of 400 mW, dynamic resistance ≤40 Ω at 5 mA, and reverse current ≤5 µA at 2.0 V. It supports high-speed automatic insertion on 5 mm-pitch PCBs and operates across –55°C to +175°C storage temperature range.
For engineers reviewing the HZS6C2JTD-E datasheet, HZS6C2JTD-E pinout, HZS6C2JTD-E application, or HZS6C2JTD-E equivalent, key selection criteria include verified zener voltage tolerance (±5% grade C), low dynamic impedance for stable reference performance, thermal robustness up to 200°C junction temperature, and compatibility with automated assembly processes requiring axial-leaded TO-236 (SOD-323) package geometry.
Technical Context
This discrete Zener diode employs silicon epitaxial planar construction to achieve tight voltage regulation and low leakage. Its 6.1–6.4 V zener range targets mid-voltage reference and clamp applications where stability under varying load and temperature is critical.
Rated for 400 mW DC power dissipation and specified with dynamic resistance ≤40 Ω at IZ = 5 mA, it delivers predictable regulation behavior in feedback loops and overvoltage protection circuits without requiring external bias compensation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 6.1 V min to 6.4 V max at IZ = 5 mA - defines precise clamping/reference threshold in linear regulators and protection circuits |
| Dynamic Resistance (rd) | ≤40 Ω at IZ = 5 mA - ensures minimal output voltage variation under changing load current |
| Reverse Current (IR) | ≤5 µA at VR = 2.0 V - guarantees low standby power loss and high impedance in off-state |
| Power Dissipation (Pd) | 400 mW at Ta = 25°C - supports continuous operation in compact, unheatsinked PCB layouts |
| Junction Temperature (Tj) | 200°C maximum - enables reliable use in thermally demanding industrial and automotive under-hood environments |
| Storage Temperature | –55°C to +175°C - compatible with reflow, wave, and conformal coating processes without parametric shift |
Pinout & Package
Package: TO-236 (SOD-323) - surface-mount, plastic-molded, axial-leaded miniature package with cathode band marking; footprint optimized for 5 mm-pitch high-speed insertion and reflow soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | High-side terminal of Zener junction | Connected to regulated voltage rail; polarity-sensitive for correct clamping direction |
| 2 (Anode) | Low-side terminal of Zener junction | Typically grounded or tied to lower potential; completes reverse-biased conduction path |
Key Features
| Feature | Design Value |
|---|---|
| Low dynamic impedance | ≤40 Ω ensures <10 mV output deviation per 1 mA load change in reference circuits |
| Grade C zener tolerance | ±5% voltage spread (6.1–6.4 V) enables interchangeability without recalibration in production designs |
| High-temperature operation | 200°C max junction rating allows deployment in engine control units and industrial motor drives |
| Automated assembly support | 5 mm pitch-compatible lead spacing and SOD-323 outline enable direct integration into high-volume pick-and-place lines |
Applications
| Industrial Power Supply Regulation | Automotive Sensor Reference |
|---|---|
Use Scenario: Stabilized 5–6.5 V rail generation for microcontroller peripherals and analog front-ends in programmable logic controllers. IC Role / Device Role / Timing Role: Zener diode provides shunt voltage reference for LDO error amplifiers and feedback dividers. Use Value: Tight 6.1–6.4 V tolerance and ≤40 Ω rd maintain ±1% output accuracy across –40°C to +125°C ambient. |
Use Scenario: Precision biasing of Hall-effect and pressure sensors in engine management systems. IC Role / Device Role / Timing Role: Acts as temperature-stable voltage clamp to protect sensor IC inputs from transients and define reference level. Use Value: 200°C junction rating and ≤5 µA leakage at 2 V ensure long-term reliability under hood thermal cycling. |
| Consumer Device Overvoltage Protection | Telecom Line Interface Clamping |
Use Scenario: Input-stage surge suppression for USB-powered audio DACs and smart home hubs. IC Role / Device Role / Timing Role: Shunt limiter that clamps transient spikes above 6.4 V to protect downstream LDOs and ADCs. Use Value: 400 mW power rating absorbs 100 ns/1 kV pulses without degradation when used with series current-limiting resistor. |
Use Scenario: Secondary-side voltage limiting on RS-485 and Ethernet PHY interface rails. IC Role / Device Role / Timing Role: Standby-mode clamp preventing latch-up during hot-plug events or ESD coupling. Use Value: Low 5 µA reverse leakage preserves signal integrity on high-impedance data lines while enabling fast response to overvoltage. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMSZ4685-TP (Micro Commercial Components) | Zener voltage 6.2 V ±5%, Pd = 500 mW, rd = 40 Ω - higher power but larger SOD-123 footprint | Requires PCB layout revision due to different pad dimensions and thermal pad absence | Preferred when >400 mW pulse handling is required and board space permits larger package |
| BZX84-C6V2 (Nexperia) | Zener voltage 6.2 V ±5%, Pd = 300 mW, rd = 60 Ω - lower power rating and higher impedance than HZS6C2JTD-E | Suitable only for low-current references (<2 mA); not recommended for active clamp or regulator feedback | Select when cost sensitivity outweighs regulation precision and thermal margin requirements |
Compared with MMSZ4685-TP and BZX84-C6V2, HZS6C2JTD-E offers optimal balance of 400 mW dissipation, ≤40 Ω dynamic resistance, and SOD-323 manufacturability-making it preferred for space-constrained, thermally demanding, and production-scale voltage reference designs.
Availability
HZS6C2JTD-E is available at Aetrix Electronics and suitable for industrial power supply regulation, automotive sensor reference, and consumer device overvoltage protection requiring stable component supply, consistent parametric performance across batches, and full traceability to ROHM's wafer fab.
Supply support for HZS6C2JTD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ROHM Semiconductor is a Japanese semiconductor manufacturer specializing in analog, power, and sensor solutions, with vertical integration from silicon wafer fabrication to package assembly.
HZS6C2JTD-E belongs to ROHM's HZS Series of silicon epitaxial planar Zener diodes, engineered specifically for high-reliability voltage stabilization in automotive, industrial, and consumer power management systems.
FAQ
What is the exact zener voltage range for HZS6C2JTD-E?
HZS6C2JTD-E has a guaranteed zener voltage range of 6.1 V minimum to 6.4 V maximum when tested at IZ = 5 mA and Ta = 25°C. This ±5% tolerance corresponds to Grade C in the HZS Series specification table and is confirmed in ROHM's ADE-208-120A(Z) datasheet Rev 1, page 3.
Does HZS6C2JTD-E support reflow soldering?
Yes, HZS6C2JTD-E uses a plastic-molded SOD-323 (TO-236) package rated for standard Pb-free reflow profiles. Its storage temperature range (–55°C to +175°C) and 200°C maximum junction temperature allow full compatibility with JEDEC J-STD-020-compliant thermal cycles without parameter shift or delamination.
What is the maximum reverse current specification for HZS6C2JTD-E?
The maximum reverse current for HZS6C2JTD-E is 5 µA at VR = 2.0 V and Ta = 25°C, as specified in the Electrical Characteristics table on page 3 of the official datasheet. This low leakage ensures minimal quiescent power draw in always-on reference circuits.
Is HZS6C2JTD-E suitable for automotive applications?
Yes, HZS6C2JTD-E is qualified for automotive use with a junction temperature rating up to 200°C and storage temperature range spanning –55°C to +175°C. Its robust silicon epitaxial planar structure and AEC-Q200-aligned process make it appropriate for engine control, body electronics, and ADAS sensor reference functions.
How does the dynamic resistance of HZS6C2JTD-E affect regulation accuracy?
HZS6C2JTD-E exhibits dynamic resistance ≤40 Ω at IZ = 5 mA, meaning its output voltage changes by no more than 40 mV per 1 mA change in zener current. This directly determines line and load regulation fidelity in feedback networks-lower rd yields tighter voltage stability under varying conditions.
HZS6C2JTD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS6C2JTD-E FAQ
1.How can I place an order for HZS6C2JTD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS6C2JTD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS6C2JTD-E reliable?
The price and inventory of HZS6C2JTD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS6C2JTD-E is usually 5 days.
3.What payment methods are accepted for HZS6C2JTD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS6C2JTD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS6C2JTD-E?
HZS6C2JTD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS6C2JTD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS6C2JTD-E?
For technical support, including HZS6C2JTD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS6C2JTD-E requirements.
6.How does Aetrix verify that HZS6C2JTD-E is sourced from the original manufacturer or authorized distributors?
All HZS6C2JTD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS6C2JTD-E meets industry standards.
7.What is the process for return or replacement of HZS6C2JTD-E?
All HZS6C2JTD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS6C2JTD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS6C2JTD-E part is unused and in its original packaging.
Return procedure for HZS6C2JTD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZS6C2JTD-E Tags
-
MMBZ5240B-7-F
Diodes Incorporated
-
BZT52C5V6T-7
Diodes Incorporated
-
MMSZ5231B-7-F
Diodes Incorporated
-
BZT52C15-7-F
Diodes Incorporated
-
BZX84C3V3LT1G
onsemi
-
MMSZ5245BS-7-F
Diodes Incorporated
-
MMSZ4682T1G
onsemi
-
BZT52C15S-7-F
Diodes Incorporated
-
MM5Z5V1ST1G
onsemi
-
SMAJ4744A-TP
Micro Commercial Co
-
BZT52C3V6LP-7
Diodes Incorporated
-
SMAZ12-13-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
