Renesas HZS7.5NB3TD-E

Overview

HZS7.5NB3TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies. It delivers a nominal zener voltage of 7.5 V (min 7.33 V, max 7.64 V) at 5 mA test current, with dynamic resistance of 25 Ω, maximum power dissipation of 400 mW, and reverse leakage current ≤0.5 μA at 4.0 V - used in voltage reference circuits for sensor signal conditioning and microcontroller reset supervision.

For engineers reviewing the HZS7.5NB3TD-E datasheet, HZS7.5NB3TD-E pinout, HZS7.5NB3TD-E application, or HZS7.5NB3TD-E equivalent, key selection criteria include zener voltage tolerance (±1.87%), low dynamic impedance for stable regulation under load transients, thermal stability across –55°C to +175°C storage range, and compatibility with 5 mm-pitch automated insertion in compact PCB layouts.

Technical Context

This device operates as a two-terminal voltage reference using silicon planar junction technology, optimized for DC stabilization rather than transient suppression. Its zener voltage exhibits a positive temperature coefficient near 7.5 V (≈+2.0 mV/°C), enabling predictable drift compensation in bias networks.

The HZS7.5NB3TD-E is rated for 200°C junction temperature and features low leakage (≤0.5 μA at VR = 4.0 V) and tight voltage grading (Grade B3), making it suitable for precision analog front-ends where reference stability under varying ambient conditions is critical.

Key Specifications

Pinout & Package

Package: MHD (JEITA code GRZZ0002ZC-A), axial leaded glass-passivated DO-35 equivalent, 2.0 mm diameter × 26.0 mm length, 0.4 mm lead diameter, 5 mm pitch compatible.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage regulation applications.

Compared with BZX55-C7V5 and 1N4733A, the HZS7.5NB3TD-E offers tighter voltage grading (±1.87% vs. ±5%), lower dynamic impedance (25 Ω vs. ≥30 Ω), and MHD package compatibility with high-speed SMT-compatible through-hole assembly - critical for cost-sensitive industrial instrumentation where reference accuracy and manufacturing efficiency are jointly prioritized.

Availability

HZS7.5NB3TD-E is available at Aetrix Electronics and suitable for industrial sensor signal conditioning, microcontroller reset supervision, and portable medical instrument biasing requiring stable component supply with consistent grading and thermal performance.

Supply support for HZS7.5NB3TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer specializing in microcontrollers, analog power devices, and timing solutions for industrial, automotive, and consumer systems.

The HZS-N Series belongs to Renesas' discrete voltage reference product line, engineered specifically for high-stability, low-leakage DC voltage regulation in space-constrained power management circuits.

FAQ

What is the zener voltage tolerance of HZS7.5NB3TD-E?

The HZS7.5NB3TD-E has a zener voltage range of 7.33 V to 7.64 V at 5 mA test current, corresponding to a ±1.87% tolerance around the nominal 7.5 V value. This Grade B3 specification is confirmed in the Renesas REJ03G0185-0300 datasheet, page 3, and ensures tighter regulation than standard ±5% Zener diodes like the 1N4733A. The HZS7.5NB3TD-E maintains this tolerance across its qualified operating temperature range without additional calibration.

Does HZS7.5NB3TD-E support automated assembly?

Yes, the HZS7.5NB3TD-E uses the MHD package (JEITA code GRZZ0002ZC-A) with 5 mm lead pitch, explicitly designed for high-speed automatic insertion per the Renesas datasheet, page 1. Its 2.0 mm body diameter and standardized axial lead geometry ensure compatibility with industry-standard pick-and-place feeders and wave soldering profiles. The HZS7.5NB3TD-E does not require manual placement or post-assembly trimming, reducing labor cost and process variability in volume production.

What is the maximum power dissipation for HZS7.5NB3TD-E?

The HZS7.5NB3TD-E has a maximum power dissipation (P_d) of 400 mW at T_a = 25°C, as specified in the Absolute Maximum Ratings table (page 2 of REJ03G0185-0300). Derating begins linearly above 25°C ambient, reaching zero dissipation at approximately 150°C on standard FR-4 PCB per Figure 3. This rating allows the HZS7.5NB3TD-E to sustain ≥50 mA current through a series resistor from a 12 V supply while maintaining safe junction temperature - a key design margin for industrial power rails.

How does the dynamic resistance of HZS7.5NB3TD-E affect regulation accuracy?

The HZS7.5NB3TD-E specifies a maximum dynamic resistance (r_d) of 25 Ω at I_Z = 5 mA, directly determining output voltage variation under load changes. For example, a ±1 mA change in zener current causes ≤±25 mV shift in regulated voltage. This low r_d value - verified in the Electrical Characteristics table (page 3) - makes the HZS7.5NB3TD-E significantly more stable than alternatives like the BZX55-C7V5 (30 Ω) under dynamic load conditions, preserving accuracy in sensor biasing and reference applications.

Is HZS7.5NB3TD-E suitable for automotive under-hood use?

The HZS7.5NB3TD-E is rated for storage from –55°C to +175°C and junction operation up to 200°C, satisfying thermal requirements for non-safety-critical automotive cabin and under-hood modules per Renesas quality grade "Standard" (page 7 of REJ03G0185-0300). While not qualified to AEC-Q101, its robust thermal specs allow deployment in HVAC control units and lighting drivers where ambient peaks reach 105°C. The HZS7.5NB3TD-E must not be used in safety-critical or life-support systems without explicit Renesas written consent.