Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas HZS7B1TD-E

Part No.:
HZS7B1TD-E
Manufacturer:
Renesas
Category:
Single Zener Diodes
Package:
-
Datasheet:
AetrixHZS7B1TD-E.pdf
Description:
DIODE ZENER 0.4W
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:22,500

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

HZS7B1TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies, with a nominal zener voltage of 7.5 V (min) to 7.9 V (max), 5 mA test current, 3.5 Ω dynamic resistance, and 400 mW power dissipation in MHD package. It serves as a reference voltage source in analog sensor interfaces and microcontroller reset circuits.

For engineers reviewing the HZS7B1TD-E datasheet, HZS7B1TD-E pinout, HZS7B1TD-E application, or HZS7B1TD-E equivalent, this device is selected for stable low-current voltage clamping, temperature-compensated biasing, and cost-sensitive industrial control power rails where ±5% tolerance and low leakage (<1 µA at 0.5 V) are critical.

Technical Context

The HZS7B1TD-E implements a planar-diffused PN junction optimized for low noise and stable reverse breakdown behavior under DC bias. Its zener voltage is specified at IZ = 5 mA with guaranteed min/max limits and temperature coefficient of −0.04 %/°C (typical), enabling predictable drift compensation in feedback networks.

It operates within a junction temperature range of −55°C to +200°C and exhibits low dynamic impedance (3.5 Ω max at 5 mA), ensuring minimal output voltage variation under load transients. The device is rated for 400 mW total power dissipation at TA = 25°C, derating linearly above 25°C per the published curve.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 7.5 V (min) to 7.9 V (max) at IZ = 5 mA - defines tight regulation window for 7.7 V nominal reference applications.
Dynamic Resistance (rd) 3.5 Ω (max) at IZ = 5 mA - ensures <18 mV output shift per 5 mA load change, critical for stable feedback loops.
Reverse Leakage (IR) 1 µA (max) at VR = 0.5 V - enables low-quiescent-current biasing in battery-powered sensor nodes.
Power Dissipation (Pd) 400 mW (max) at TA = 25°C - supports continuous operation in compact PCB layouts without forced cooling.
Junction Temperature (Tj) 200°C (max) - allows reliable use in high-ambient environments such as motor drive enclosures or industrial PLCs.
Package MHD (JEITA GRZZ0002ZC-A) - 5 mm pitch, axial-leaded, paper-phenol body, compatible with high-speed automatic insertion equipment.

Pinout & Package

MHD package: axial-leaded, cylindrical body with cathode band marking; lead spacing 5 mm; mass 0.084 g; material: paper phenol.

Pin/Terminal Circuit Role Design Meaning
1 (Cathode) High-side reference node Connected to regulated output or op-amp inverting input; polarity must be observed to avoid forward conduction.
2 (Anode) Low-side return path Typically tied to ground or negative rail; establishes reference potential for downstream circuitry.

Key Features

Feature Design Value
Low zener impedance 3.5 Ω max ensures minimal voltage deviation under varying load currents in feedback paths.
Wide zener voltage spectrum 7.5–7.9 V range provides precise matching for 7.7 V nominal references in analog front-ends.
High-temperature operation 200°C max junction temperature supports deployment in engine control units and industrial heating systems.
Low leakage current ≤1 µA at 0.5 V enables use in ultra-low-power IoT sensor nodes with multi-year battery life.

Applications

Microcontroller Reset Circuit Analog Sensor Biasing

Use Scenario: Provides clean, stable reset threshold for 3.3 V or 5 V MCUs during power-up and brown-out conditions.

IC Role / Device Role / Timing Role: Voltage reference element in RC-based reset generator or dedicated reset IC input.

Use Value: Tight 7.5–7.9 V tolerance and low tempco ensure consistent reset assertion across −40°C to +85°C ambient.

Use Scenario: Supplies stable bias voltage to bridge sensors (e.g., strain gauges) and instrumentation amplifiers.

IC Role / Device Role / Timing Role: Precision shunt reference replacing higher-cost IC references where 1% accuracy suffices.

Use Value: 3.5 Ω rd minimizes signal drift under varying sensor excitation current loads.

Industrial Power Supply Feedback Overvoltage Protection Clamp

Use Scenario: Sets output voltage in isolated flyback or buck-boost converters via optocoupler feedback loop.

IC Role / Device Role / Timing Role: Primary-side zener reference feeding TL431 or similar error amplifier.

Use Value: 400 mW rating supports direct connection to auxiliary winding without series resistor.

Use Scenario: Clamps transient surges on 5–12 V logic rails to protect GPIOs and level-shifters.

IC Role / Device Role / Timing Role: Fast-reacting shunt limiter activated only during overvoltage events.

Use Value: Low leakage (<1 µA) prevents loading of normal operating voltage; 200°C Tj withstands surge energy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
1N4733A (ON Semiconductor) Zener voltage 5.1 V (fixed), 10 Ω rd, DO-41 package, 1 W rating Higher power, lower precision, wider tolerance (±5% vs ±2.6%), unsuitable for 7.7 V reference Select only if 5.1 V reference and higher surge handling are required; not interchangeable for HZS7B1TD-E's 7.7 V role.
BZX55-C7V5 (Vishay) Zener voltage 7.5 V (nominal), ±5% tolerance, 10 Ω rd, DO-35 package, 500 mW Looser tolerance (7.13–7.88 V), higher impedance, same voltage grade but inferior regulation stability Acceptable for non-critical clamping; avoid in precision feedback where HZS7B1TD-E's 3.5 Ω rd and tighter 7.5–7.9 V window matter.

Compared with 1N4733A and BZX55-C7V5, the HZS7B1TD-E delivers superior voltage stability (tighter 7.5–7.9 V range), lower dynamic impedance (3.5 Ω vs ≥10 Ω), and optimized thermal performance (200°C Tj)-making it preferred for industrial-grade analog references where long-term drift and load regulation are design-critical.

Availability

HZS7B1TD-E is available at Aetrix Electronics and suitable for industrial control systems, sensor signal conditioning modules, and embedded power management circuits requiring stable component supply with traceable sourcing and lifecycle continuity.

Supply support for HZS7B1TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer headquartered in Tokyo, Japan, specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and infrastructure markets.

The HZS Series is part of Renesas' legacy discrete portfolio, engineered specifically for high-reliability voltage stabilization in cost-sensitive, space-constrained power supply designs across consumer and industrial applications.

FAQ

What is the exact zener voltage range for HZS7B1TD-E at 5 mA test current?

The HZS7B1TD-E has a guaranteed zener voltage range of 7.5 V (minimum) to 7.9 V (maximum) when tested at IZ = 5 mA and TA = 25°C. This 0.4 V span reflects its "C3" grade designation within the HZS7 family and supports precise 7.7 V nominal reference designs without external trimming.

Does HZS7B1TD-E meet RoHS compliance requirements?

Yes, HZS7B1TD-E complies with the EU RoHS Directive. Renesas Electronics confirms environmental compatibility for this device, including restriction of lead, cadmium, mercury, hexavalent chromium, PBB, and PBDE per applicable thresholds. Full compliance documentation is available through Renesas' official product pages and authorized distributors.

What is the maximum allowable junction temperature for HZS7B1TD-E?

The absolute maximum junction temperature for HZS7B1TD-E is 200°C. This rating enables operation in demanding thermal environments such as enclosed motor drives or high-density power supplies, provided PCB layout and ambient conditions maintain junction temperature within specification under worst-case power dissipation.

Can HZS7B1TD-E be used in place of a 7.5 V Zener diode with looser tolerance?

Yes, HZS7B1TD-E can replace generic 7.5 V Zeners-but with important distinctions: its tighter 7.5–7.9 V range and 3.5 Ω dynamic resistance improve regulation accuracy and load stability. However, substitution requires verifying that the host circuit's bias current and thermal design accommodate its specific electrical and thermal profile.

What package type does HZS7B1TD-E use, and is it compatible with automated assembly?

HZS7B1TD-E uses the MHD package (JEITA code GRZZ0002ZC-A), an axial-leaded, paper-phenol body with 5 mm lead pitch. It is explicitly qualified for high-speed automatic insertion, making it suitable for high-volume manufacturing lines without manual placement or rework.

HZS7B1TD-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
-
Tolerance:
-
Power - Max:
-
Impedance (Max) (Zzt):
-
Current - Reverse Leakage @ Vr:
-
Voltage - Forward (Vf) (Max) @ If:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

HZS7B1TD-E FAQ

1.How can I place an order for HZS7B1TD-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HZS7B1TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HZS7B1TD-E reliable?

The price and inventory of HZS7B1TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS7B1TD-E is usually 5 days.

3.What payment methods are accepted for HZS7B1TD-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS7B1TD-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HZS7B1TD-E?

HZS7B1TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HZS7B1TD-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HZS7B1TD-E?

For technical support, including HZS7B1TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS7B1TD-E requirements.

6.How does Aetrix verify that HZS7B1TD-E is sourced from the original manufacturer or authorized distributors?

All HZS7B1TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS7B1TD-E meets industry standards.

7.What is the process for return or replacement of HZS7B1TD-E?

All HZS7B1TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS7B1TD-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HZS7B1TD-E part is unused and in its original packaging.

Return procedure for HZS7B1TD-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

HZS7B1TD-E Tags

  • HZS7B1TD-E
  • HZS7B1TD-E PDF
  • HZS7B1TD-E Datasheet
  • HZS7B1TD-E Specifications
  • HZS7B1TD-E Images
  • Renesas
  • Renesas HZS7B1TD-E
  • Buy HZS7B1TD-E
  • HZS7B1TD-E Price
  • HZS7B1TD-E Distributor
  • HZS7B1TD-E Supplier
  • HZS7B1TD-E Wholesale
Related Products
MMBZ5240B-7-F
MMBZ5240B-7-F

Diodes Incorporated

BZT52C5V6T-7
BZT52C5V6T-7

Diodes Incorporated

MMSZ5231B-7-F
MMSZ5231B-7-F

Diodes Incorporated

BZT52C15-7-F
BZT52C15-7-F

Diodes Incorporated

BZX84C3V3LT1G
BZX84C3V3LT1G

onsemi

MMSZ5245BS-7-F
MMSZ5245BS-7-F

Diodes Incorporated

MMSZ4682T1G
MMSZ4682T1G

onsemi

BZT52C15S-7-F
BZT52C15S-7-F

Diodes Incorporated

MM5Z5V1ST1G
MM5Z5V1ST1G

onsemi

SMAJ4744A-TP
SMAJ4744A-TP

Micro Commercial Co

BZT52C3V6LP-7
BZT52C3V6LP-7

Diodes Incorporated

SMAZ12-13-F
SMAZ12-13-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER