Renesas HZS7B2LTD-E

Overview

HZS7B2LTD-E from Renesas Electronics is a silicon planar Zener diode optimized for low-noise voltage reference and stabilization in precision analog circuits, featuring a nominal zener voltage of 6.9 V to 7.2 V, dynamic resistance of 60 Ω at 3.5 mA, and maximum power dissipation of 400 mW in the MHD package. It delivers low leakage current (≤1 μA at VR = 2.0 V), low zener impedance, and noise performance approximately 1/3–1/10 that of the legacy HZ series - ideal for high-stability power supplies and sensor biasing.

For engineers reviewing the HZS7B2LTD-E datasheet, HZS7B2LTD-E pinout, HZS7B2LTD-E application, or HZS7B2LTD-E equivalent, key selection criteria include its 60 Ω dynamic resistance at 3.5 mA, ±0.3 V zener voltage tolerance, −55°C to +175°C storage temperature range, and suitability for 5 mm-pitch high-speed automatic insertion in industrial and test equipment designs.

Technical Context

The HZS7B2LTD-E employs a silicon planar junction structure with controlled doping and geometry to minimize shot and thermal noise-critical for low-drift references in instrumentation amplifiers and ADC voltage references. Its zener voltage temperature coefficient is stabilized near zero crossing in the 6.9–7.2 V range, reducing drift over temperature.

Designed for DC-regulated operation, it specifies zener voltage under 0.5 mA test current and dynamic resistance at 3.5 mA, confirming stable regulation behavior in low-current bias networks and shunt regulator topologies. The device operates within a junction temperature limit of 200°C and supports ambient temperatures up to 150°C with derated power dissipation.

Key Specifications

Pinout & Package

The HZS7B2LTD-E is housed in the MHD package (JEITA code GRZZ0002ZC-A), a radial-leaded, epoxy-molded discrete diode package with 2.0 mm body diameter, 26.0 mm lead length, and 5 mm pitch - optimized for high-speed automated insertion and wave soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with BZX84-C7V5 and 1N4733A, the HZS7B2LTD-E provides uniquely low noise and tighter voltage tolerance in the 6.9–7.2 V range - making it the preferred choice for metrology-grade references, not just generic voltage clamping.

Availability

HZS7B2LTD-E is available at Aetrix Electronics and suitable for industrial power monitoring, medical sensor biasing, test equipment calibration, and automotive ECU reference applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for HZS7B2LTD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog power, and timing solutions for industrial, automotive, and infrastructure markets.

The HZS-L Series was developed specifically for low-noise, high-stability voltage reference applications in precision analog systems - emphasizing zener impedance control, thermal drift minimization, and manufacturability for automated assembly.

FAQ

What is the exact zener voltage range specified for HZS7B2LTD-E?

The HZS7B2LTD-E has a guaranteed zener voltage range of 6.9 V (minimum) to 7.2 V (maximum) when tested at I_Z = 0.5 mA, per Renesas datasheet REJ03G0166-0300 Rev.3.00. This tight 0.3 V span supports high-accuracy voltage referencing without post-calibration trimming. The HZS7B2LTD-E maintains this specification across its qualified operating temperature range.

Does HZS7B2LTD-E support high-speed automatic insertion?

Yes, the HZS7B2LTD-E is explicitly designed for 5 mm-pitch high-speed automatic insertion, as confirmed in the "Features" section of the Renesas datasheet. Its MHD package (GRZZ0002ZC-A) has standardized lead spacing and mechanical dimensions compatible with industry-standard pick-and-place and axial insertion equipment used in high-volume manufacturing.

What is the maximum power dissipation rating for HZS7B2LTD-E?

The HZS7B2LTD-E has a maximum power dissipation (P_d) of 400 mW at ambient temperature (T_a) = 25°C, as specified in the Absolute Maximum Ratings table. Derating is required above 25°C per the power dissipation vs. ambient temperature curve in Figure 3 of the datasheet, reaching 0 mW at T_a ≈ 150°C. This rating applies to the MHD package mounted on a standard 100 × 180 × 1.6 mm phenolic PCB.

How does the noise performance of HZS7B2LTD-E compare to standard Zener diodes?

The HZS7B2LTD-E achieves approximately 1/3 to 1/10 the noise level of the legacy HZ series Zener diodes, according to Renesas' published characterization. This low-noise performance stems from its silicon planar structure and process optimization - directly reducing RMS voltage noise in precision reference and biasing applications where signal integrity is critical, such as in medical sensor front-ends or high-resolution data converters.

What is the junction temperature limit for HZS7B2LTD-E?

The absolute maximum junction temperature (T_j) for HZS7B2LTD-E is 200°C, as stated in the Absolute Maximum Ratings table. This high T_j rating enables reliable operation in thermally demanding environments - including industrial motor drives and automotive under-hood applications - provided the device's power dissipation and thermal path are properly managed per the datasheet's derating guidelines.