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Renesas HZS7B3TD-E
- Part No.:
- HZS7B3TD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS7B3TD-E.pdf
- Description:
- DIODE ZENER 0.4W
- Quantity:
- Payment:
- Shipping:
Inventory:15,000
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Product details
Overview
HZS7B3TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies, with a nominal zener voltage of 7.5–7.9 V at 5 mA test current, 400 mW maximum power dissipation, and dynamic resistance of 15 Ω, commonly used in reference voltage generation for analog sensor interfaces and microcontroller reset circuits.
For engineers reviewing the HZS7B3TD-E datasheet, HZS7B3TD-E pinout, HZS7B3TD-E application, or HZS7B3TD-E equivalent, key selection criteria include zener voltage tolerance (±0.4 V), low leakage (<1 µA at VR = 5 V), thermal stability (γZ ≈ −3.5 mV/°C), and compatibility with 5 mm-pitch automated insertion in industrial control PCBs.
Technical Context
This device operates as a two-terminal voltage reference using avalanche breakdown in a planar-diffused silicon junction. It delivers stable regulation under DC bias conditions with specified test current of 5 mA and reverse voltage up to 5 V for leakage measurement.
The HZS7B3TD-E exhibits a negative temperature coefficient of −3.5 mV/°C, indicating decreasing zener voltage with rising junction temperature, and is rated for junction temperatures up to 200°C - enabling use in thermally demanding environments without derating below ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 7.5–7.9 V at IZ = 5 mA - defines precise regulation band for 8 V-class supply rails |
| Dynamic Resistance (rd) | 15 Ω max at IZ = 5 mA - ensures minimal output voltage shift under load transients |
| Power Dissipation (Pd) | 400 mW at Ta = 25°C - supports continuous operation in compact SMT-adjacent layouts |
| Reverse Leakage (IR) | <1 µA at VR = 5 V - enables low-quiescent-current bias networks in battery-powered systems |
| Temperature Coefficient (γZ) | −3.5 mV/°C - allows predictable drift compensation in temperature-critical references |
| Junction Temperature (Tj) | 200°C max - permits high-reliability deployment in automotive under-hood or industrial motor-control enclosures |
Pinout & Package
Package: MHD (Mini-High-Density) plastic package with 2.0 mm diameter body and 26.0 mm lead length; compatible with 5 mm pitch automatic insertion equipment.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Zener cathode terminal | Connected to regulated positive rail; polarity must be observed to avoid forward conduction |
| 2 (Anode) | Zener anode terminal | Typically grounded or connected to lower potential; forms reference node with cathode |
Key Features
| Feature | Design Value |
|---|---|
| Low zener impedance | 15 Ω dynamic resistance enables tight regulation under varying load currents |
| Wide zener voltage range coverage | Part of HZS Series spanning 1.6–38 V - simplifies BOM consolidation across multiple voltage nodes |
| High reliability construction | Silicon planar process with 200°C junction rating supports long-term stability in harsh thermal cycles |
| Automated assembly compatibility | MHD package with 5 mm pitch alignment enables high-throughput placement without rework |
Applications
| Industrial Sensor Signal Conditioning | Microcontroller Reset Circuitry |
|---|---|
|
Use Scenario: Providing stable 7.5 V reference for op-amp gain-setting resistors in 4–20 mA transmitter front-ends. IC Role / Device Role / Timing Role: Voltage reference element establishing precision scaling ratio independent of supply variation. Use Value: Maintains <±0.5% full-scale accuracy over −40°C to +85°C due to predictable γZ and low rd. |
Use Scenario: Generating clean 7.8 V threshold for external reset supervisor ICs monitoring 8 V auxiliary rails. IC Role / Device Role / Timing Role: Passive voltage clamp defining reset assertion level during brown-out events. Use Value: Delivers sub-µA leakage at 5 V hold-off, minimizing quiescent current in always-on reset paths. |
| Programmable Logic Controller I/O Modules | Medical Diagnostic Instrument Power Rails |
|
Use Scenario: Stabilizing 7.6 V bias for isolated ADC driver stages in DIN-rail mounted PLC analog input cards. IC Role / Device Role / Timing Role: Low-noise DC reference source decoupled from switching supply ripple. Use Value: 400 mW Pd rating allows direct series-resistor biasing without heatsinking in confined module cavities. |
Use Scenario: Supplying calibrated reference to photodiode transimpedance amplifiers in portable blood oximeters. IC Role / Device Role / Timing Role: Precision voltage anchor for analog front-end gain calibration at production test. Use Value: Tight 0.4 V VZ tolerance reduces post-calibration trim effort and improves batch yield. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4733A (ON Semiconductor) | 12 V nominal VZ, 1000 mW Pd, 10 Ω rd, DO-41 package | Higher power and voltage; requires PCB layout revision for larger footprint and thermal relief | Select when higher power margin or legacy DO-41 compatibility is required |
| BZX55C7V5 (Vishay) | 7.5 V nominal VZ, ±5% tolerance (vs. ±0.4 V for HZS7B3TD-E), 500 mW Pd, DO-35 package | Looser voltage tolerance increases calibration overhead; DO-35 leads require manual or modified auto-insertion | Choose only if cost sensitivity outweighs precision and assembly efficiency requirements |
Compared with 1N4733A and BZX55C7V5, the HZS7B3TD-E offers superior voltage tolerance (±0.4 V vs. ±5%), optimized MHD packaging for automated throughput, and matched thermal drift characteristics ideal for multi-node reference distribution in space-constrained industrial modules.
Availability
HZS7B3TD-E is available at Aetrix Electronics and suitable for industrial sensor conditioning, microcontroller reset circuitry, and programmable logic controller I/O modules requiring stable component supply with guaranteed long-term manufacturability.
Supply support for HZS7B3TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, and power devices for industrial, automotive, and infrastructure markets.
The HZS Series was developed as a family of precision silicon planar Zener diodes targeting high-stability voltage reference needs in cost-sensitive, high-volume industrial power management applications.
FAQ
What is the exact zener voltage range specified for HZS7B3TD-E?
The HZS7B3TD-E has a guaranteed zener voltage range of 7.5 V to 7.9 V when tested at 5 mA DC current, corresponding to Grade C3 within the HZS7 type designation per Renesas datasheet REJ03G0184-0500 Rev.5.00. This 0.4 V tolerance supports tight regulation without post-production trimming. The HZS7B3TD-E maintains this specification across its qualified operating temperature range.
Does HZS7B3TD-E support surface-mount assembly or through-hole mounting?
HZS7B3TD-E uses the MHD package - a radial-leaded, miniature plastic housing with 26.0 mm lead length and 2.0 mm body diameter - explicitly designed for 5 mm pitch high-speed automatic insertion into through-hole PCBs. It is not a surface-mount device and lacks solder pads or gull-wing leads. The HZS7B3TD-E requires axial or radial through-hole placement equipment.
What is the maximum allowable reverse voltage before breakdown for HZS7B3TD-E?
The HZS7B3TD-E does not specify a discrete "reverse breakdown voltage" separate from its zener voltage; it is characterized by VZ = 7.5–7.9 V at IZ = 5 mA. Its rated reverse voltage for leakage testing is 5 V (with IR ≤ 1 µA), but sustained operation above VZ is normal and intended. The HZS7B3TD-E is rated for continuous operation at its nominal zener voltage under defined power limits.
How does the temperature coefficient of HZS7B3TD-E affect long-term stability?
HZS7B3TD-E has a zener voltage temperature coefficient (γZ) of −3.5 mV/°C, meaning its regulated voltage decreases linearly with rising junction temperature. This predictable drift enables system-level compensation in precision references. The HZS7B3TD-E's stability is further enhanced by its 200°C maximum junction temperature rating, reducing thermal runaway risk in enclosed designs.
Is HZS7B3TD-E compliant with RoHS and lead-free soldering standards?
Yes, HZS7B3TD-E complies with the EU RoHS Directive and is manufactured with lead-free terminations suitable for standard reflow and wave soldering processes. Renesas confirms environmental compliance in accordance with applicable regulations, and the HZS7B3TD-E carries no exemptions requiring special handling. Full material declarations are available upon request for the HZS7B3TD-E.
HZS7B3TD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS7B3TD-E FAQ
1.How can I place an order for HZS7B3TD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS7B3TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS7B3TD-E reliable?
The price and inventory of HZS7B3TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS7B3TD-E is usually 5 days.
3.What payment methods are accepted for HZS7B3TD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS7B3TD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS7B3TD-E?
HZS7B3TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS7B3TD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS7B3TD-E?
For technical support, including HZS7B3TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS7B3TD-E requirements.
6.How does Aetrix verify that HZS7B3TD-E is sourced from the original manufacturer or authorized distributors?
All HZS7B3TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS7B3TD-E meets industry standards.
7.What is the process for return or replacement of HZS7B3TD-E?
All HZS7B3TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS7B3TD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS7B3TD-E part is unused and in its original packaging.
Return procedure for HZS7B3TD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZS7B3TD-E Tags
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MM5Z5V1ST1G
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