Renesas HZS7C1JRX-E

Overview

HZS7C1JRX-E from ROHM Semiconductor is a silicon epitaxial planar Zener diode designed for precision voltage regulation in stabilized power supplies. It delivers a nominal zener voltage of 7.2–7.6 V at 5 mA test current, with dynamic resistance of 15 Ω, maximum power dissipation of 400 mW, and junction temperature rating up to 200°C - enabling use in compact industrial DC-DC biasing and reference circuits.

For engineers reviewing the HZS7C1JRX-E datasheet, HZS7C1JRX-E pinout, HZS7C1JRX-E application, or HZS7C1JRX-E equivalent, key selection criteria include its tight zener voltage tolerance (±0.4 V), low dynamic impedance, DC-tested characterization, 5 mm-pitch compatible lead spacing, and suitability for high-speed automatic insertion in production-grade power management assemblies.

Technical Context

This device operates as a two-terminal shunt regulator, maintaining stable output voltage across varying load currents via controlled reverse-biased breakdown. Its epitaxial planar construction ensures low leakage (<1 µA at VR = 3.5 V) and predictable temperature coefficient behavior - verified by ROHM's published γZ vs. VZ curve showing ~+0.03 %/°C near 7.5 V.

The HZS7C1JRX-E is characterized under DC conditions only, with absolute maximum ratings defined at Ta = 25°C and derated linearly above 25°C per the published power dissipation vs. ambient temperature curve. Its 400 mW Pd rating assumes PCB thermal relief per standard JEDEC 51-3 mounting on 1.6 mm phenolic board with 5 mm lead length.

Key Specifications

Pinout & Package

Package: DO-35 (glass axial leaded, 5 mm pitch), epoxy-sealed body with cathode band marking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage regulation applications.

Compared with HZS7C1JRX-E, the 1N4733A offers higher power but mismatched voltage, requiring circuit redesign; the BZX55-C7V5 matches voltage and package but trades tighter tolerance and lower impedance for broader availability and lower unit cost in high-volume procurement.

Availability

HZS7C1JRX-E is available at Aetrix Electronics and suitable for industrial power supply reference, automotive sensor biasing, and programmable logic controller I/O protection requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for HZS7C1JRX-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ROHM Semiconductor is a Japanese semiconductor manufacturer specializing in analog, power, and sensor solutions for automotive, industrial, and consumer systems.

The HZS Series is part of ROHM's discrete Zener diode portfolio, engineered specifically for high-reliability voltage stabilization in space-constrained, thermally demanding power supply and signal conditioning applications.

FAQ

What is the exact zener voltage range specified for HZS7C1JRX-E?

The HZS7C1JRX-E is rated for a zener voltage range of 7.2 V to 7.6 V at a test current of 5 mA, as confirmed in ROHM's ADE-208-120A(Z) datasheet Rev 1, Table on page 4. This 0.4 V window reflects the C1 grade tolerance and is measured under DC conditions - no AC or pulse testing applies. The nominal value is 7.4 V, and this specification remains valid across the full operating temperature range when derated per the published P_d vs. T_a curve.

Is HZS7C1JRX-E suitable for surface-mount assembly?

No, HZS7C1JRX-E uses a DO-35 glass axial package with radial leads spaced 5 mm apart, designed explicitly for through-hole mounting and high-speed automatic insertion - not surface-mount reflow. ROHM does not offer an SMD variant of this specific grade. Attempting reflow soldering risks glass-body cracking and parameter shift. For SMT alternatives, consider ROHM's UDZS series Schottky Zeners, but note those differ in construction, leakage, and impedance characteristics versus HZS7C1JRX-E.

What is the maximum reverse current guaranteed for HZS7C1JRX-E?

HZS7C1JRX-E guarantees a maximum reverse current (I_R) of 1 µA at a reverse voltage (V_R) of 3.5 V, per the Electrical Characteristics table on page 4 of the official datasheet. This low leakage supports ultra-low-power applications such as battery-backed memory retention or high-impedance sensor biasing. The value is DC-tested and does not apply under transient or AC conditions - designers must verify system-level leakage paths independently when using HZS7C1JRX-E in precision analog circuits.

Does HZS7C1JRX-E have a specified temperature coefficient?

Yes - ROHM publishes the temperature coefficient (γ_Z) vs. zener voltage curve in Figure 2 of the datasheet. For HZS7C1JRX-E (7.2–7.6 V range), γ_Z is approximately +0.03 %/°C, corresponding to +2.2 mV/°C. This positive coefficient means output voltage increases with temperature, which must be factored into reference stability budgets for wide-temperature applications. The coefficient is derived from DC measurements and applies within the device's rated junction temperature range.

Can HZS7C1JRX-E replace a 1N4733A in existing designs?

No - HZS7C1JRX-E (7.2–7.6 V) and 1N4733A (5.1 V) differ fundamentally in nominal voltage, making them non-interchangeable without circuit modification. Substituting HZS7C1JRX-E would raise regulated voltage by ~2.3 V, potentially damaging downstream ICs. Even if resistor networks are adjusted, differences in dynamic resistance (15 Ω vs. 17 Ω), leakage (1 µA vs. 5 µA), and thermal profile require full revalidation. Always verify replacement with HZS7C1JRX-E's full parametric sheet before design integration.