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Renesas HZS7C3TD-E

Part No.:
HZS7C3TD-E
Manufacturer:
Renesas
Category:
Single Zener Diodes
Package:
-
Datasheet:
AetrixHZS7C3TD-E.pdf
Description:
DIODE ZENER 0.4W
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,500

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Product details

Overview

HZS7C3TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies, with a nominal zener voltage of 7.5 V to 7.9 V (Grade C3), 400 mW power dissipation, 15 Ω dynamic resistance at 5 mA, and operation up to 200°C junction temperature. It serves as a reference voltage source in analog sensor interfaces and microcontroller reset circuits.

For engineers reviewing the HZS7C3TD-E datasheet, HZS7C3TD-E pinout, HZS7C3TD-E application, or HZS7C3TD-E equivalent, this discrete Zener diode offers verified DC-stable breakdown performance, low leakage (<1 µA at 0.5 V), and compatibility with 5 mm-pitch automated insertion - critical for cost-sensitive industrial control and consumer power management designs.

Technical Context

This device operates in reverse-bias breakdown mode with tightly controlled zener voltage tolerance (±0.4 V at 7.5–7.9 V range) and exhibits a negative temperature coefficient of −0.04 %/°C, enabling predictable drift compensation in ambient-varying environments. Its low dynamic resistance (15 Ω @ IZ = 5 mA) ensures minimal output impedance under load variation.

The HZS7C3TD-E uses a silicon planar construction with epoxy-molded MHD package, rated for 200°C maximum junction temperature and −55°C to +175°C storage range. It is tested with DC conditions only and is not rated for transient surge or AC waveform regulation.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 7.5 V to 7.9 V (Grade C3, tested at IZ = 5 mA) - defines stable reference point for feedback loops
Power Dissipation (Pd) 400 mW at Ta = 25°C - sets maximum continuous DC power handling without derating
Dynamic Resistance (rd) 15 Ω @ IZ = 5 mA - determines output impedance and regulation sensitivity to current changes
Reverse Leakage (IR) ≤1 µA @ VR = 0.5 V - ensures minimal quiescent current draw in standby or high-impedance bias networks
Junction Temperature (Tj) 200°C maximum - supports operation in thermally demanding enclosures without thermal shutdown
Package Type MHD (JEITA code GRZZ0002ZC-A) - surface-mount compatible leadframe with 5 mm pitch for high-speed auto-insertion

Pinout & Package

The HZS7C3TD-E is housed in an MHD package (JEITA GRZZ0002ZC-A), a molded epoxy, axial-lead discrete diode with cathode band marking. Dimensions: φD = 2.0 mm max, E = 2.4 mm max, L = 26.0 mm min, mass ≈ 0.084 g.

Pin/Terminal Circuit Role Design Meaning
1 (Cathode) Breakdown voltage reference node Connected to regulated output or feedback network; polarity must be observed to enable reverse-bias conduction
2 (Anode) Current return path Typically tied to ground or lower potential rail; completes bias current path for zener operation

Key Features

Feature Design Value
Low zener impedance 15 Ω at 5 mA enables tight voltage regulation under varying load currents in feedback networks
Wide zener voltage spectrum 7.5–7.9 V range (C3 grade) allows precise selection within ±0.4 V tolerance for stable reference design
High-temperature capability 200°C max junction temperature supports use in engine control units and industrial motor drives
Automated assembly compatibility 5 mm pitch and MHD package enable high-throughput placement in consumer electronics manufacturing

Applications

Microcontroller Reset Circuit Analog Sensor Biasing

Use Scenario: Provides clean, temperature-compensated reset threshold for 3.3 V or 5 V microcontrollers during power-up and brownout events.

IC Role / Device Role / Timing Role: Voltage reference element defining logic-level transition point for reset assertion.

Use Value: Ensures deterministic reset timing with ≤1 µA leakage, minimizing false triggers in battery-powered systems.

Use Scenario: Supplies stable excitation voltage to resistive bridge sensors (e.g., strain gauges, RTDs) in measurement front-ends.

IC Role / Device Role / Timing Role: Precision DC reference source replacing higher-cost IC references where 1% accuracy suffices.

Use Value: Delivers 7.5–7.9 V at <15 Ω output impedance, reducing sensor gain error caused by supply ripple.

Low-Power LDO Pre-Regulator Industrial Power Monitor

Use Scenario: Stabilizes input to low-dropout linear regulators in multi-rail embedded systems with wide input voltage variation.

IC Role / Device Role / Timing Role: Coarse pre-regulation stage preceding fine LDO regulation to improve PSRR and thermal margin.

Use Value: Handles 400 mW dissipation while maintaining ≤0.4 V zener tolerance, reducing heat load on downstream LDOs.

Use Scenario: Serves as overvoltage detection threshold in programmable power supervisors monitoring 8 V rails in PLC modules.

IC Role / Device Role / Timing Role: Breakdown-triggered comparator input reference for fault flag generation.

Use Value: Negative tempco (−0.04 %/°C) compensates for thermal drift in sensing circuitry across −40°C to +85°C operating range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
BZX55-C7V5 (Nexperia) Same 7.5 V nominal, but 500 mW Pd, 20 Ω rd, DO-35 package (not MHD) Higher power rating suits higher-current shunt regulation; axial DO-35 requires manual or different auto-insertion tooling Select when >400 mW dissipation or legacy DO-35 footprint is required; verify thermal pad layout compatibility
MMBZ5233BS (ON Semiconductor) SOT-23 surface-mount, 7.5 V, 225 mW, 17 Ω rd, 100 nA IR Smaller footprint and lower leakage ideal for space-constrained PCBs; lower Pd limits current-handling capability Choose for compact designs needing ultra-low leakage; derate power above 70°C ambient due to smaller thermal mass

Compared with BZX55-C7V5 and MMBZ5233BS, the HZS7C3TD-E provides optimal balance of 400 mW power handling, 15 Ω dynamic resistance, and MHD package compatibility with 5 mm-pitch insertion equipment - making it preferred for high-volume industrial power supply assemblies where thermal robustness and assembly efficiency are prioritized.

Availability

HZS7C3TD-E is available at Aetrix Electronics and suitable for industrial control systems, consumer power adapters, and automotive body electronics requiring stable component supply with consistent zener voltage grading and traceable lot history.

Supply support for HZS7C3TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and power devices for industrial, automotive, and consumer markets.

The HZS Series belongs to Renesas' discrete silicon diode product line, engineered specifically for cost-effective, high-reliability DC voltage stabilization in power management and reference applications.

FAQ

What is the exact zener voltage range specified for HZS7C3TD-E?

The HZS7C3TD-E is graded as C3 within the HZS7 family and has a guaranteed zener voltage range of 7.5 V to 7.9 V when tested at 5 mA DC current, per Renesas datasheet REJ03G0184-0500 Rev.5.00. This tolerance reflects ±0.4 V absolute deviation, not percentage-based, and applies strictly under DC test conditions.

Does HZS7C3TD-E support AC signal regulation or only DC applications?

HZS7C3TD-E is characterized and specified exclusively for DC operation, as explicitly noted in the datasheet ("Tested with DC"). It is not rated for AC waveform clipping, surge suppression, or transient voltage regulation. For AC-coupled or fast-transient applications, dedicated TVS diodes or active regulators should be used instead of HZS7C3TD-E.

What is the maximum allowable reverse current before breakdown in HZS7C3TD-E?

The HZS7C3TD-E specifies a maximum reverse leakage current of 1 µA at VR = 0.5 V, measured at Ta = 25°C. This value increases with temperature but remains below 10 µA up to 125°C per typical characterization curves in the datasheet. Exceeding 0.5 V reverse bias risks premature conduction and invalidates guaranteed zener behavior.

Can HZS7C3TD-E be used in place of HZS7B2 or HZS7A1 in existing designs?

No - HZS7C3TD-E is not interchangeable with HZS7B2 (6.7–7.0 V) or HZS7A1 (7.7–8.1 V) due to non-overlapping zener voltage ranges. Substituting across grades alters regulation setpoints by ≥0.5 V, potentially causing system malfunction. Each grade (A1/A2/A3/B1/B2/B3/C1/C2/C3) represents a distinct voltage bin with no functional overlap.

Is the MHD package of HZS7C3TD-E RoHS-compliant and lead-free?

Yes - the MHD package used for HZS7C3TD-E complies with EU RoHS Directive requirements, as confirmed by Renesas' environmental compliance documentation. The device contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits, and is suitable for lead-free reflow soldering processes per JEDEC J-STD-020.

HZS7C3TD-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
-
Tolerance:
-
Power - Max:
-
Impedance (Max) (Zzt):
-
Current - Reverse Leakage @ Vr:
-
Voltage - Forward (Vf) (Max) @ If:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

HZS7C3TD-E FAQ

1.How can I place an order for HZS7C3TD-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HZS7C3TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HZS7C3TD-E reliable?

The price and inventory of HZS7C3TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS7C3TD-E is usually 5 days.

3.What payment methods are accepted for HZS7C3TD-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS7C3TD-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HZS7C3TD-E?

HZS7C3TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HZS7C3TD-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HZS7C3TD-E?

For technical support, including HZS7C3TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS7C3TD-E requirements.

6.How does Aetrix verify that HZS7C3TD-E is sourced from the original manufacturer or authorized distributors?

All HZS7C3TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS7C3TD-E meets industry standards.

7.What is the process for return or replacement of HZS7C3TD-E?

All HZS7C3TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS7C3TD-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HZS7C3TD-E part is unused and in its original packaging.

Return procedure for HZS7C3TD-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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