Renesas HZS8.2NB1TA-E

Overview

HZS8.2NB1TA-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in stabilized power supplies, with a nominal zener voltage of 8.2 V (min 7.56 V, max 7.90 V), maximum power dissipation of 400 mW, dynamic resistance of 20 Ω at 5 mA test current, and reverse current ≤0.5 μA at 5.0 V. It operates within –55°C to +175°C storage temperature range and is rated for junction temperatures up to 200°C.

For engineers reviewing the HZS8.2NB1TA-E datasheet, HZS8.2NB1TA-E pinout, HZS8.2NB1TA-E application, or HZS8.2NB1TA-E equivalent, this device serves as a low-leakage, low-impedance voltage reference in low-power analog circuits, overvoltage protection clamps, and feedback networks for DC-DC converters where tight tolerance and thermal stability are required.

Technical Context

The HZS8.2NB1TA-E employs a planar diffusion process to achieve stable zener breakdown characteristics with low leakage and predictable temperature coefficient behavior. Its zener voltage exhibits a positive temperature coefficient near 8.2 V, minimizing drift across operating ambient temperatures.

Designed for surface-mount compatibility with 5 mm-pitch high-speed automatic insertion, it uses a molded plastic MHD package with axial lead configuration (cathode band marked), supporting reliable thermal dissipation up to 400 mW under defined PCB layout conditions (100 × 180 × 1.6 mm phenolic board).

Key Specifications

Pinout & Package

MHD package: axial-leaded, molded plastic case with cathode band marking; dimensions per JEITA GRZZ0002ZC-A (L = 26.0 mm, φD = 2.0 mm, E = 2.4 mm); mass ≈ 0.084 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage regulation applications.

Compared with 1N4733A and BZX55-C8V2, the HZS8.2NB1TA-E offers tighter voltage tolerance (±2.2% vs ±5%), lower dynamic resistance (20 Ω vs 25 Ω), and optimized MHD package for high-speed insertion-making it preferable for precision, volume-manufactured industrial power management designs.

Availability

HZS8.2NB1TA-E is available at Aetrix Electronics and suitable for stabilized power supplies, voltage reference circuits, and overvoltage protection systems requiring stable component supply, consistent parametric performance, and long-term manufacturability assurance.

Supply support for HZS8.2NB1TA-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and infrastructure markets.

The HZS-N Series was developed as a family of silicon planar Zener diodes targeting cost-effective, high-reliability voltage stabilization in consumer, office, and industrial equipment-emphasizing low leakage, tight voltage tolerance, and automated assembly compatibility.

FAQ

What is the zener voltage tolerance of HZS8.2NB1TA-E?

The HZS8.2NB1TA-E has a zener voltage range of 7.56 V to 7.90 V at 5 mA test current, corresponding to a ±2.2% tolerance around the nominal 8.2 V rating. This tight specification ensures predictable regulation performance in precision analog circuits and feedback networks where voltage accuracy directly impacts system stability and measurement fidelity. The HZS8.2NB1TA-E achieves this via controlled planar diffusion process and grade-B1 binning.

Does HZS8.2NB1TA-E support high-temperature operation?

Yes, the HZS8.2NB1TA-E is rated for junction temperatures up to 200°C and storage temperatures from –55°C to +175°C. Its silicon planar construction and MHD package enable reliable operation in thermally stressed environments such as industrial motor drives and automotive under-hood modules-provided proper PCB thermal relief and power derating per Figure 3 in the datasheet are applied. The HZS8.2NB1TA-E maintains specified electrical characteristics within these limits.

What is the dynamic resistance of HZS8.2NB1TA-E and why does it matter?

The dynamic resistance (r_d) of HZS8.2NB1TA-E is 20 Ω maximum at 5 mA test current. This parameter quantifies how much the zener voltage changes with small variations in current-lower r_d means better regulation stability under load transients. In applications like op-amp reference or DC-DC feedback, this ensures minimal output voltage deviation when upstream current demand fluctuates. The HZS8.2NB1TA-E's 20 Ω value reflects its optimized planar structure for low-impedance voltage control.

Can HZS8.2NB1TA-E be used in automated PCB assembly?

Yes, the HZS8.2NB1TA-E is explicitly designed for 5 mm-pitch high-speed automatic insertion, as stated in its official Renesas documentation. Its MHD package features standardized axial leads with consistent mechanical dimensions (L = 26.0 mm, φD = 2.0 mm) and cathode band marking for orientation detection-enabling reliable pick-and-place and wave soldering without manual intervention. This makes the HZS8.2NB1TA-E suitable for high-volume manufacturing of industrial power supplies and instrumentation.

How does the leakage current of HZS8.2NB1TA-E compare to standard Zener diodes?

The HZS8.2NB1TA-E specifies reverse current ≤0.5 μA at 5.0 V, significantly lower than typical general-purpose Zeners (e.g., 1N47xx series often specify ≤10 μA). This ultra-low leakage minimizes parasitic loading in high-impedance nodes-such as sensor bias networks or comparator reference inputs-preserving signal integrity and reducing quiescent power loss. The HZS8.2NB1TA-E achieves this through advanced planar processing and strict grade-B1 screening.