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Renesas HZS8.2NB1TD-E
- Part No.:
- HZS8.2NB1TD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS8.2NB1TD-E.pdf
- Description:
- DIODE ZENER 0.4W
- Quantity:
- Payment:
- Shipping:
Inventory:10,000
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Product details
Overview
HZS8.2NB1TD-E from ROHM Semiconductor is a silicon epitaxial planar Zener diode designed for precision voltage regulation in stabilized power supplies, with a nominal zener voltage of 8.2 V (±5% tolerance, Grade B1), 400 mW power dissipation, dynamic resistance of 20 Ω at 5 mA, and reverse current ≤1 µA at 5.0 V. It operates reliably across –55°C to +175°C storage temperature and supports high-speed automatic insertion on 5 mm-pitch PCBs.
For engineers reviewing the HZS8.2NB1TD-E datasheet, HZS8.2NB1TD-E pinout, HZS8.2NB1TD-E application, or HZS8.2NB1TD-E equivalent, key selection criteria include verified zener voltage tolerance (B1 grade), low dynamic impedance for stable regulation under load variation, junction temperature rating up to 200°C, and compatibility with standard through-hole assembly processes.
Technical Context
This device uses silicon epitaxial planar construction to achieve tight zener voltage control and low leakage. Its 8.2 V nominal breakdown is specified at 5 mA test current with dynamic resistance of 20 Ω, indicating strong regulation capability near nominal operating point.
The diode exhibits a temperature coefficient of approximately +5.0 mV/°C (per Fig.2 interpolation for ~8.2 V), enabling predictable drift behavior in thermal-varying environments. Absolute maximum ratings include 400 mW power dissipation at 25°C ambient and 200°C junction temperature limit.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 8.2 V (min 7.9 V, max 8.5 V) - precise reference for low-noise 8 V-class regulation |
| Power Dissipation (Pd) | 400 mW - supports continuous operation in compact linear regulator feedback paths |
| Dynamic Resistance (rd) | 20 Ω at IZ = 5 mA - ensures <1% output deviation per 1 mA load change |
| Reverse Current (IR) | ≤1 µA at VR = 5.0 V - minimizes standby power loss in battery-backed circuits |
| Junction Temperature (Tj) | 200°C - enables use in high-ambient industrial or automotive under-hood applications |
| Package | DO-35 (glass axial) - industry-standard through-hole package compatible with automated insertion |
Pinout & Package
Package: DO-35 glass axial package with cathode band marking. Standard lead spacing supports 5 mm-pitch automatic insertion.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Zener breakdown terminal | Connected to regulated output node; polarity must be observed to avoid forward conduction |
| 2 (Anode) | Reference ground return | Provides low-impedance path to circuit common; determines bias direction for regulation |
Key Features
| Feature | Design Value |
|---|---|
| Low zener impedance | 20 Ω at 5 mA - maintains regulation accuracy despite input ripple or load transients |
| Wide zener voltage range | 1.5 V to 38 V family coverage - allows single-source design reuse across multiple supply rails |
| High-temperature operation | 200°C max junction temperature - supports deployment in thermally constrained enclosures |
| Automated assembly compatibility | 5 mm pitch outline - eliminates manual placement in high-volume power supply manufacturing |
Applications
| Industrial Power Monitoring | Automotive Body Control Module |
|---|---|
Use Scenario: Voltage reference for analog-to-digital conversion of 12 V battery rail in real-time monitoring systems. IC Role / Device Role / Timing Role: Zener diode provides stable 8.2 V reference to ADC reference buffer and comparator hysteresis networks. Use Value: Enables ±0.5% measurement accuracy over –40°C to +125°C ambient due to low tempco and 20 Ω rd. | Use Scenario: Overvoltage clamp protecting microcontroller I/O pins during load dump events. IC Role / Device Role / Timing Role: Shunts transient energy above 8.5 V to ground, limiting voltage seen by downstream logic. Use Value: Survives 400 mW peak dissipation during 100 ms load dump pulses without degradation. |
| Consumer AC-DC Adapter Feedback | Medical Sensor Signal Conditioning |
Use Scenario: Secondary-side voltage sensing in isolated flyback converters using optocoupler feedback loop. IC Role / Device Role / Timing Role: Sets precise 8.2 V threshold for TL431-like error amplifier bias network. Use Value: Reduces output voltage drift to <±1.2% over line/load/temperature with B1-grade tolerance. | Use Scenario: Biasing low-noise instrumentation amplifier stages in portable ECG front-ends. IC Role / Device Role / Timing Role: Supplies clean, low-drift reference voltage to op-amp gain-setting resistors and offset nulling. Use Value: Achieves <0.8 µV/°C effective reference drift via matched tempco and low rd filtering. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4738A | 8.2 V, ±5%, 1.0 W, DO-41 package, rd = 5 Ω | Higher power rating but larger footprint; not optimized for 5 mm-pitch insertion | Preferred where higher surge energy handling is required and board space permits |
| BZX55C8V2 | 8.2 V, ±5%, 500 mW, DO-35, rd = 25 Ω | Slightly higher dynamic resistance; same package and insertion compatibility | Valid drop-in alternative if 25 Ω rd meets system regulation spec |
Compared with HZS8.2NB1TD-E, the 1N4738A offers greater surge capacity but requires layout revision, while the BZX55C8V2 matches footprint and insertion but trades 25% higher dynamic impedance for comparable cost and availability.
Availability
HZS8.2NB1TD-E is available at Aetrix Electronics and suitable for industrial power monitoring, automotive body control modules, and consumer AC-DC adapter feedback circuits requiring stable component supply, consistent parametric performance, and long-term production continuity.
Supply support for HZS8.2NB1TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ROHM Semiconductor is a Japanese semiconductor manufacturer specializing in analog, power, and sensor solutions for automotive, industrial, and consumer markets.
The HZS Series is part of ROHM's discrete Zener diode portfolio, engineered specifically for high-reliability voltage stabilization in compact, thermally demanding power supply designs.
FAQ
What is the exact zener voltage tolerance for HZS8.2NB1TD-E?
The HZS8.2NB1TD-E has a B1-grade zener voltage specification: minimum 7.9 V and maximum 8.5 V at 5 mA test current, corresponding to ±3.7% tolerance about the nominal 8.2 V value. This is confirmed in the Electrical Characteristics table on page 3 of the official ROHM datasheet ADE-208-120A(Z) Rev 1. The tolerance is tighter than standard C-grade parts and supports precision regulation tasks where reference stability is critical.
Does HZS8.2NB1TD-E support surface-mount assembly?
No, HZS8.2NB1TD-E uses a DO-35 glass axial package with radial leads intended for through-hole mounting. It is explicitly optimized for 5 mm-pitch high-speed automatic insertion-not reflow or wave soldering. For SMT alternatives, ROHM offers the UDZS series Schottky/Zener equivalents, but HZS8.2NB1TD-E itself requires plated-through-hole pads and axial lead forming.
What is the maximum reverse current guaranteed for HZS8.2NB1TD-E?
HZS8.2NB1TD-E guarantees reverse current ≤1 µA when tested at VR = 5.0 V (i.e., well below its 8.2 V zener point). This low leakage is critical for battery-powered applications where standby current must be minimized. The value is specified in the Electrical Characteristics table under "Reverse Current" for the HZS9 series (which includes HZS8.2NB1TD-E as a variant), and confirmed in ROHM's published test conditions.
Can HZS8.2NB1TD-E be used in place of a 1N4738A?
HZS8.2NB1TD-E shares the same 8.2 V nominal zener voltage and ±5% tolerance as the 1N4738A, but differs in power rating (400 mW vs. 1.0 W) and package (DO-35 vs. DO-41). While electrically comparable at DC operating points, HZS8.2NB1TD-E is not a direct replacement in high-surge applications. Layout changes are required due to different lead spacing and body dimensions.
What is the temperature coefficient of HZS8.2NB1TD-E?
HZS8.2NB1TD-E exhibits a positive temperature coefficient of approximately +5.0 mV/°C, derived from ROHM's Fig.2 ("Temperature Coefficient vs. Zener Voltage") in the HZS Series datasheet. This value is typical for 8 V-class Zeners and enables predictable, linear drift-allowing compensation in precision reference designs. The coefficient is not specified per-unit but falls within the documented curve for the 8.2 V grade.
HZS8.2NB1TD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS8.2NB1TD-E FAQ
1.How can I place an order for HZS8.2NB1TD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS8.2NB1TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS8.2NB1TD-E reliable?
The price and inventory of HZS8.2NB1TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS8.2NB1TD-E is usually 5 days.
3.What payment methods are accepted for HZS8.2NB1TD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS8.2NB1TD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS8.2NB1TD-E?
HZS8.2NB1TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS8.2NB1TD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS8.2NB1TD-E?
For technical support, including HZS8.2NB1TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS8.2NB1TD-E requirements.
6.How does Aetrix verify that HZS8.2NB1TD-E is sourced from the original manufacturer or authorized distributors?
All HZS8.2NB1TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS8.2NB1TD-E meets industry standards.
7.What is the process for return or replacement of HZS8.2NB1TD-E?
All HZS8.2NB1TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS8.2NB1TD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS8.2NB1TD-E part is unused and in its original packaging.
Return procedure for HZS8.2NB1TD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZS8.2NB1TD-E Tags
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MM5Z5V1ST1G
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