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Renesas HZS9.1NB3TD-E
- Part No.:
- HZS9.1NB3TD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS9.1NB3TD-E.pdf
- Description:
- DIODE ZENER 0.4W
- Quantity:
- Payment:
- Shipping:
Inventory:60,000
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Product details
Overview
HZS9.1NB3TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies. It delivers a nominal zener voltage of 9.1 V (min 8.89 V, max 9.29 V) at 5 mA test current, with dynamic resistance of 6.0 Ω, maximum power dissipation of 400 mW, and reverse leakage current ≤0.5 μA at 7.0 V - enabling stable reference generation in sensor biasing and analog front-end circuits.
For engineers reviewing the HZS9.1NB3TD-E datasheet, HZS9.1NB3TD-E pinout, HZS9.1NB3TD-E application, or HZS9.1NB3TD-E equivalent, this part serves as a surface-mount, 2-pin, MHD-package Zener diode optimized for high-precision DC voltage stabilization in space-constrained industrial and consumer electronics where thermal stability and low impedance are critical.
Technical Context
The HZS9.1NB3TD-E operates as a two-terminal voltage reference device using silicon planar junction technology. Its zener breakdown mechanism provides predictable, repeatable regulation across temperature, with a zener voltage temperature coefficient of approximately +0.04 %/°C (typical for 9.1 V grade), supporting stable performance in ambient ranges from –55°C to +175°C.
Designed for automatic insertion on 5 mm-pitch PCBs, it features low leakage (<0.5 μA at VR = 7.0 V) and low dynamic impedance (6.0 Ω at IZ = 5 mA), ensuring minimal output variation under load transients. The device is rated for junction temperatures up to 200°C and conforms to Renesas' Standard quality grade for industrial and consumer applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 8.89 V to 9.29 V at IZ = 5 mA - defines tight regulation window for ±3% tolerance reference design |
| Dynamic Resistance (rd) | 6.0 Ω at IZ = 5 mA - ensures low output impedance for effective ripple suppression in feedback paths |
| Reverse Leakage Current (IR) | ≤0.5 μA at VR = 7.0 V - minimizes quiescent current draw in battery-powered or ultra-low-power circuits |
| Power Dissipation (Pd) | 400 mW - supports continuous operation at 5 mA without heatsinking in standard FR-4 PCB layouts |
| Junction Temperature (Tj) | –55°C to +200°C - enables use in extended-temperature industrial environments including motor control and power supply monitoring |
| Package | MHD (JEITA GRZZ0002ZC-A) - 2.0 mm diameter cylindrical glass package with axial leads, compatible with high-speed automated insertion |
Pinout & Package
MHD package: hermetically sealed glass body, 2.0 mm diameter × 26.0 mm length, axial lead configuration, cathode identified by black band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Zener voltage reference terminal | Connected to regulated output node; polarity must be observed to maintain reverse-bias operation |
| 2 (Anode) | Reference ground/reference return | Typically tied to system ground or lower potential rail; completes current path during regulation |
Key Features
| Feature | Design Value |
|---|---|
| Low zener impedance | 6.0 Ω enables <10 mV output shift per 60 mA load change - critical for precision analog sensing |
| Wide operating temperature range | –55°C to +175°C storage / –55°C to +200°C junction - supports deployment in automotive engine compartments and industrial enclosures |
| Tight zener voltage tolerance | B3 grade (±2.2% typical) - reduces need for post-production trimming in voltage reference subcircuits |
| High reliability glass package | MHD construction with hermetic seal - prevents moisture ingress and parameter drift over 10+ year service life |
| Automated assembly compatibility | 5 mm pitch lead spacing - integrates seamlessly into high-volume SMT-reflow or wave-solder processes without retooling |
Applications
| Industrial Sensor Biasing | USB-C Power Delivery Reference |
|---|---|
Use Scenario: Providing stable 9.1 V bias to bridge-type pressure sensors in factory automation PLC modules. IC Role / Device Role / Timing Role: Two-terminal voltage reference establishing fixed excitation voltage for Wheatstone bridge operation. Use Value: Low 6.0 Ω dynamic resistance maintains bridge balance accuracy within ±0.1% despite 10–100 Hz supply ripple. |
Use Scenario: Generating precise 9.1 V reference for USB-C PD controller feedback loop in portable chargers. IC Role / Device Role / Timing Role: Primary voltage reference for isolated flyback feedback optocoupler circuit. Use Value: ≤0.5 μA leakage ensures no measurable error in 1% tolerance PD voltage setpoint under light-load conditions. |
| Programmable Logic Controller I/O Protection | Audio Amplifier DC Offset Compensation |
Use Scenario: Clamping input protection network on 24 V digital I/O channels in industrial PLC backplanes. IC Role / Device Role / Timing Role: Overvoltage shunt limiter absorbing transient surges while maintaining steady-state regulation. Use Value: 400 mW power rating sustains 100 ms surge events up to 30 V without degradation or parametric shift. |
Use Scenario: Setting null-point bias in Class AB headphone amplifier output stage to minimize audible pop/click. IC Role / Device Role / Timing Role: Precision DC offset reference for op-amp input common-mode level setting. Use Value: ±2.2% B3-grade tolerance eliminates manual potentiometer adjustment, reducing BOM count and calibration time. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4739A | Zener voltage 9.1 V (±5%), rd = 8 Ω, Pd = 1 W, DO-41 package | Higher power rating but larger footprint and looser tolerance - suitable only where board area and precision are secondary | Select when higher surge energy handling is required and ±5% regulation tolerance is acceptable |
| BZX55C9V1 | Zener voltage 9.1 V (±5%), rd = 10 Ω, Pd = 500 mW, DO-35 package | Lower thermal robustness (Tj max = 175°C), higher impedance - less stable under temperature cycling | Choose only for cost-sensitive consumer designs where long-term drift and thermal hysteresis are not critical |
Compared with 1N4739A and BZX55C9V1, the HZS9.1NB3TD-E offers tighter voltage tolerance (±2.2% vs. ±5%), lower dynamic impedance (6.0 Ω vs. ≥8 Ω), and superior high-temperature capability (200°C vs. ≤175°C), making it preferred for industrial-grade analog signal chains requiring long-term stability and minimal calibration overhead.
Availability
HZS9.1NB3TD-E is available at Aetrix Electronics and suitable for industrial sensor biasing, USB-C power delivery reference design, and programmable logic controller I/O protection requiring stable component supply, traceable lot history, and lifecycle continuity assurance.
Supply support for HZS9.1NB3TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader headquartered in Tokyo, Japan, specializing in microcontrollers, analog and power devices, and SoC solutions for industrial, automotive, and enterprise markets.
The HZS-N Series was developed by Renesas as a family of precision silicon planar Zener diodes targeting stable, low-drift voltage references for industrial power supplies and analog signal conditioning - emphasizing reliability, tight tolerances, and high-temperature resilience.
FAQ
What is the exact zener voltage range for HZS9.1NB3TD-E at 5 mA test current?
The HZS9.1NB3TD-E has a guaranteed zener voltage range of 8.89 V to 9.29 V when tested at IZ = 5 mA and Ta = 25°C. This B3-grade specification corresponds to ±2.2% tolerance around the nominal 9.1 V rating, confirmed in Renesas' REJ03G0185-0300 datasheet, page 3.
Does HZS9.1NB3TD-E support operation above 125°C ambient temperature?
Yes, the HZS9.1NB3TD-E is rated for storage from –55°C to +175°C and junction temperatures up to +200°C. Its MHD glass package and silicon planar construction allow reliable operation in ambient temperatures exceeding 125°C, provided power dissipation remains within derated limits per Figure 3 in the datasheet.
What is the dynamic resistance value of HZS9.1NB3TD-E and why does it matter?
The HZS9.1NB3TD-E exhibits a dynamic resistance (rd) of 6.0 Ω at IZ = 5 mA. This low value directly determines how well the diode rejects input ripple and load-induced voltage shifts - for example, a 60 mA load step causes only ~360 mV output deviation, critical for precision analog references.
Is HZS9.1NB3TD-E RoHS compliant and what is its lead finish?
Yes, HZS9.1NB3TD-E complies with EU RoHS Directive requirements. As stated in Renesas documentation, all HZS-N Series devices use lead-free terminations. The MHD package employs matte tin-plated axial leads, verified per JEDEC J-STD-020 and Renesas environmental compliance statements.
Can HZS9.1NB3TD-E be used as a direct replacement for older NEC HZS9.1N parts?
Yes - the HZS9.1NB3TD-E is the Renesas-continued version of the original NEC HZS9.1N, retaining identical electrical specifications, MHD package dimensions, pinout, and JEITA code GRZZ0002ZC-A. Renesas explicitly confirms backward compatibility in the April 2010 merger notice included in the datasheet.
HZS9.1NB3TD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS9.1NB3TD-E FAQ
1.How can I place an order for HZS9.1NB3TD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS9.1NB3TD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS9.1NB3TD-E reliable?
The price and inventory of HZS9.1NB3TD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS9.1NB3TD-E is usually 5 days.
3.What payment methods are accepted for HZS9.1NB3TD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS9.1NB3TD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS9.1NB3TD-E?
HZS9.1NB3TD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS9.1NB3TD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS9.1NB3TD-E?
For technical support, including HZS9.1NB3TD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS9.1NB3TD-E requirements.
6.How does Aetrix verify that HZS9.1NB3TD-E is sourced from the original manufacturer or authorized distributors?
All HZS9.1NB3TD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS9.1NB3TD-E meets industry standards.
7.What is the process for return or replacement of HZS9.1NB3TD-E?
All HZS9.1NB3TD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS9.1NB3TD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS9.1NB3TD-E part is unused and in its original packaging.
Return procedure for HZS9.1NB3TD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZS9.1NB3TD-E Tags
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