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Renesas HZS9B1LTD-E
- Part No.:
- HZS9B1LTD-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZS9B1LTD-E.pdf
- Description:
- DIODE ZENER
- Quantity:
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Inventory:12,500
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Product details
Overview
HZS9B1LTD-E from Renesas Electronics is a silicon planar Zener diode optimized for low-noise voltage reference and stabilization in precision analog circuits, featuring a nominal zener voltage of 8.5 V (min 8.3 V, max 8.7 V), dynamic resistance of 60 Ω at 6 mA, maximum power dissipation of 400 mW, and junction temperature rating up to 200°C. It is used in stabilized power supplies, sensor excitation circuits, and ADC reference buffers where low noise and stable regulation are critical.
For engineers reviewing the HZS9B1LTD-E datasheet, HZS9B1LTD-E pinout, HZS9B1LTD-E application, or HZS9B1LTD-E equivalent, key selection considerations include its 60 Ω zener impedance at 6 mA, −0.04 %/°C temperature coefficient near 8.5 V, 1 μA reverse leakage at 6.0 V, MHD package compatibility with 5 mm-pitch automated insertion, and qualification for industrial-grade applications under Renesas' Standard quality grade.
Technical Context
This device operates as a two-terminal voltage reference using avalanche breakdown in a planar-diffused silicon junction. Its low-noise performance stems from optimized doping profile and geometry, achieving diode noise ~1/3–1/10 that of the legacy HZ series. The zener voltage exhibits minimal temperature drift around 8.5 V due to zero-crossing of the temperature coefficient curve.
Designed for DC-biased operation, it requires a minimum test current of 0.5 mA and is characterized at 1 mA and 6 mA. Thermal derating follows a linear 4.0 mW/°C reduction above 25°C ambient, with full 400 mW dissipation permitted only at Ta ≤ 25°C per the published derating curve.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 8.3 V min to 8.7 V max at IZ = 6 mA - defines stable regulation window for precision biasing |
| Dynamic Resistance (rd) | 60 Ω max at IZ = 6 mA - ensures low output impedance and high line/load regulation |
| Reverse Leakage Current (IR) | 1 μA max at VR = 6.0 V - minimizes error current in high-impedance reference nodes |
| Power Dissipation (Pd) | 400 mW max at Ta = 25°C - supports compact PCB layouts without forced cooling |
| Junction Temperature (Tj) | 200°C max - enables operation in high-ambient industrial environments |
| Temperature Coefficient (γZ) | −0.04 %/°C typical near 8.5 V - provides near-zero drift over 0–70°C range |
| Package | MHD (JEITA GRZZ0002ZC-A) - 2-pin axial lead, 2.0 mm diameter, 26 mm length, 5 mm pitch compatible |
Pinout & Package
The HZS9B1LTD-E uses the MHD axial-leaded package: cylindrical glass body with cathode band marking, 2.0 mm nominal diameter, 26 mm overall length, and 5 mm lead spacing optimized for high-speed automatic insertion. Leads are tinned copper-clad steel.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Banded End) | Cathode | Connected to regulated positive rail; reverse-biased terminal during normal zener operation |
| 2 (Non-banded End) | Anode | Connected to circuit ground or lower potential; completes bias path for zener conduction |
Key Features
| Feature | Design Value |
|---|---|
| Low-noise zener structure | Diode noise reduced to ~1/3–1/10 of HZ-series - critical for audio preamps and precision instrumentation |
| Stable low-impedance regulation | 60 Ω dynamic resistance at 6 mA - maintains <0.1% output variation under 10 mA load transients |
| Industrial temperature range support | Rated for Tj up to 200°C - allows use in enclosed enclosures or near heat sources without derating penalties |
| Automated assembly compatibility | MHD package with 5 mm pitch - enables direct placement on wave-solder or selective solder lines without rework |
| Low leakage at sub-zener voltage | 1 μA max at 6.0 V - prevents loading of high-Z sensor bridges or op-amp feedback networks |
Applications
| Industrial Power Supply Reference | High-Resolution ADC Biasing |
|---|---|
|
Use Scenario: Providing stable 8.5 V reference for ±15 V dual-rail industrial SMPS feedback loop. IC Role / Device Role / Timing Role: Two-terminal shunt voltage reference regulating error amplifier input. Use Value: 60 Ω dynamic resistance ensures <±0.5 mV shift under 10 mA line/load variations, improving output regulation to ±0.1%. |
Use Scenario: Biasing the reference input of a 16-bit SAR ADC in a vibration monitoring sensor node. IC Role / Device Role / Timing Role: Low-noise DC voltage source for ADC VREF pin, directly replacing TL431 in space-constrained layout. Use Value: 1/3 noise vs. HZ-series reduces RMS noise floor by 10.5 dB, enabling full utilization of 16-bit ENOB. |
| Transducer Excitation Circuit | Op-Amp Precision Clamp |
|
Use Scenario: Supplying constant 8.5 V excitation to a 350 Ω strain gauge bridge in a hydraulic pressure transducer. IC Role / Device Role / Timing Role: Stable excitation source maintaining bridge common-mode voltage independent of supply ripple. Use Value: −0.04 %/°C tempco limits bridge offset drift to <±30 μV over 0–60°C, meeting Class C accuracy requirements. |
Use Scenario: Clamping op-amp output to +8.5 V in a signal conditioning stage for overload protection. IC Role / Device Role / Timing Role: Fast-recovery shunt limiter activated during transient overvoltage events. Use Value: 400 mW power rating sustains 500 ms overloads at 100 mA, preventing op-amp saturation and recovery delay. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode voltage reference applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BZX84-C8V2 (Nexperia) | 8.2 V nominal, 90 Ω rd, SOT-23 package, 350 mW Pd | SMT-only; higher dynamic resistance increases regulation error under load | Choose for board-level space savings when 8.2 V tolerance and SMT assembly are acceptable |
| 1N4736A (ON Semiconductor) | 8.2 V nominal, 7 Ω rd, DO-41 package, 1 W Pd, higher noise | Higher power but 3× noise vs. HZS-L series; unsuitable for low-noise signal chains | Choose for high-current shunt regulation where noise is secondary to thermal margin |
Compared with BZX84-C8V2 and 1N4736A, the HZS9B1LTD-E delivers superior noise performance and tighter voltage tolerance at 8.5 V while maintaining industrial-grade reliability in axial-leaded form - making it optimal for precision analog systems where reference stability and spectral purity are prioritized over footprint or raw power handling.
Availability
HZS9B1LTD-E is available at Aetrix Electronics and suitable for industrial power supplies, sensor signal conditioning, precision data acquisition, and analog front-end design requiring stable component supply with traceable sourcing and long-term lifecycle management.
Supply support for HZS9B1LTD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.
The HZS-L Series was developed specifically for low-noise, high-stability voltage reference applications in industrial instrumentation and precision analog systems - emphasizing zener impedance control, temperature coefficient optimization, and automated assembly readiness.
FAQ
What is the exact zener voltage range specified for HZS9B1LTD-E?
The HZS9B1LTD-E has a guaranteed zener voltage range of 8.3 V minimum to 8.7 V maximum when tested at IZ = 6 mA and Ta = 25°C. This 0.4 V window reflects tight process control for precision reference use, and the typical value is 8.5 V - confirmed in the official Renesas REJ03G0166-0300 datasheet revision 3.00.
Does HZS9B1LTD-E have a documented temperature coefficient, and what is its value?
Yes, the HZS9B1LTD-E exhibits a temperature coefficient of approximately −0.04 %/°C near its 8.5 V operating point, as shown in Figure 2 of the Renesas datasheet. This near-zero drift characteristic makes it suitable for applications requiring stable reference voltage across 0–70°C ambient ranges without external compensation.
What package type does HZS9B1LTD-E use, and is it compatible with automated insertion equipment?
HZS9B1LTD-E uses the MHD package (JEITA code GRZZ0002ZC-A), an axial-leaded glass diode with 2.0 mm diameter and 26 mm length. Its 5 mm lead pitch is explicitly designed for high-speed automatic insertion, as stated in the "Features" section of the Renesas datasheet - eliminating manual placement in volume manufacturing.
How does the noise performance of HZS9B1LTD-E compare to standard Zener diodes?
The HZS9B1LTD-E achieves diode noise approximately 1/3 to 1/10 that of the legacy HZ series, per Renesas' official characterization. This ultra-low-noise behavior results from proprietary planar diffusion and junction geometry, making HZS9B1LTD-E especially valuable in audio preamplifiers, precision sensor interfaces, and high-resolution ADC references where spectral purity is critical.
Is HZS9B1LTD-E rated for automotive or safety-critical applications?
No - HZS9B1LTD-E is classified under Renesas' "Standard" quality grade, intended for industrial, office, and communications equipment per document REJ03G0166-0300. It is not qualified for automotive (AEC-Q101), medical life-support, or aerospace use. For such applications, explicit written consent from Renesas Electronics is required before deployment of HZS9B1LTD-E.
HZS9B1LTD-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZS9B1LTD-E FAQ
1.How can I place an order for HZS9B1LTD-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZS9B1LTD-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZS9B1LTD-E reliable?
The price and inventory of HZS9B1LTD-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZS9B1LTD-E is usually 5 days.
3.What payment methods are accepted for HZS9B1LTD-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZS9B1LTD-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZS9B1LTD-E?
HZS9B1LTD-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZS9B1LTD-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZS9B1LTD-E?
For technical support, including HZS9B1LTD-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZS9B1LTD-E requirements.
6.How does Aetrix verify that HZS9B1LTD-E is sourced from the original manufacturer or authorized distributors?
All HZS9B1LTD-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZS9B1LTD-E meets industry standards.
7.What is the process for return or replacement of HZS9B1LTD-E?
All HZS9B1LTD-E units undergo pre-shipment inspection (PSI). If there is an issue with HZS9B1LTD-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZS9B1LTD-E part is unused and in its original packaging.
Return procedure for HZS9B1LTD-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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