Renesas HZS9C1TD-E

Overview

HZS9C1TD-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage regulation in low-power stabilized power supplies, with a nominal zener voltage of 9.3–9.7 V at 5 mA, 20 Ω dynamic resistance, and 400 mW power dissipation in MHD package. It serves as a shunt reference in feedback loops of linear regulators and overvoltage protection circuits for industrial control modules.

For engineers reviewing the HZS9C1TD-E datasheet, HZS9C1TD-E pinout, HZS9C1TD-E application, or HZS9C1TD-E equivalent, key selection criteria include zener voltage tolerance (±0.2 V), low leakage current (≤1 µA at VR = 7.5 V), temperature coefficient (−0.04 %/°C), and compatibility with 5 mm-pitch automated insertion equipment.

Technical Context

This device operates as a two-terminal shunt regulator, maintaining stable output voltage by conducting reverse current above its breakdown threshold. Its planar junction construction ensures consistent breakdown characteristics and low noise across temperature ranges from −55°C to +175°C.

The HZS9C1TD-E exhibits a negative temperature coefficient (−0.04 %/°C) typical of mid-voltage Zeners (~9.5 V), enabling predictable drift compensation in reference designs. Its 20 Ω dynamic impedance at 5 mA supports tight regulation under varying load conditions in low-current bias networks.

Key Specifications

Pinout & Package

Package: MHD - axial-lead, epoxy-molded, 2.0 mm diameter body, 26.0 mm lead length, 5 mm pitch, mass 0.084 g. Cathode identified by lake-blue band.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage regulation applications.

Compared with BZX55C9V1 and MMSZ5240B, the HZS9C1TD-E offers tighter voltage tolerance (±0.2 V vs. ±5%), axial-leaded MHD packaging for legacy through-hole production, and guaranteed 400 mW power handling-making it optimal for cost-sensitive industrial power supply references requiring high-volume automated assembly.

Availability

HZS9C1TD-E is available at Aetrix Electronics and suitable for industrial sensor signal conditioning, microcontroller reset circuits, LED driver current setpoints, and overvoltage protection clamps requiring stable component supply with consistent parametric performance across production lots.

Supply support for HZS9C1TD-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.

The HZS Series was developed as a family of precision silicon planar Zener diodes targeting cost-effective, high-reliability voltage stabilization in industrial power supplies and analog signal chains.

FAQ

What is the exact zener voltage range specified for HZS9C1TD-E at 5 mA test current?

The HZS9C1TD-E has a guaranteed zener voltage range of 9.3 V to 9.7 V when tested at I_Z = 5 mA, corresponding to Grade C3 within the HZS9 family. This ±0.2 V tolerance is tighter than standard ±5% Zeners and supports high-accuracy reference designs without trimming. The specification is confirmed in Renesas document REJ03G0184-0500 Rev.5.00, Page 3.

Does HZS9C1TD-E support automated PCB assembly, and what mechanical features enable this?

Yes, the HZS9C1TD-E uses the MHD package (JEITA GRZZ0002ZC-A) with standardized 5 mm lead pitch and 26.0 mm lead length, explicitly designed for compatibility with high-speed axial-component insertion equipment. Its lake-blue cathode band provides unambiguous polarity identification during automated optical inspection and placement. These features are documented in the "Ordering Information" and "Package Dimensions" sections of the Renesas datasheet.

What is the maximum allowable reverse leakage current for HZS9C1TD-E, and under what condition is it measured?

The maximum reverse leakage current for HZS9C1TD-E is 1 µA, measured at V_R = 7.5 V (i.e., 20% below nominal zener voltage). This low leakage ensures minimal error contribution in high-impedance voltage divider networks and reference circuits. The value is specified in the "Electrical Characteristics" table on Page 3 of the official Renesas datasheet REJ03G0184-0500.

How does the temperature coefficient of HZS9C1TD-E affect its performance in wide-temperature environments?

HZS9C1TD-E has a temperature coefficient of −0.04 %/°C, meaning its zener voltage decreases by approximately 3.8 mV/°C near 25°C. This predictable negative drift allows designers to compensate for thermal effects in precision references-e.g., pairing with positive-TC components. The coefficient is plotted in Figure 2 of the Renesas datasheet and remains stable across the −55°C to +175°C storage range.

Can HZS9C1TD-E be used in place of other HZS9 variants like HZS9B2, and what is the key distinguishing parameter?

No-HZS9C1TD-E is not interchangeable with HZS9B2. While both belong to the HZS9 family, HZS9B2 specifies 8.7–9.1 V zener voltage (Grade B2), whereas HZS9C1TD-E is Grade C3 (9.3–9.7 V). The "C1TD-E" suffix denotes the specific grade and packaging; substituting across grades introduces up to 0.6 V error in regulation. This distinction is clearly defined in the "Electrical Characteristics" table on Page 3 of the Renesas datasheet.