Renesas HZU10B2JTRF

Overview

HZU10B2JTRF from Renesas Electronics is a silicon planar Zener diode in ultra-small URP (SC-76A) surface-mount package, designed for precision voltage stabilization at 10.11–10.55 V with 7.0 Ω dynamic resistance at 5 mA and ≤2 μA reverse leakage at 8.0 V. It delivers 200 mW power dissipation and operates up to 150°C junction temperature, commonly used in low-power reference circuits and overvoltage protection in portable instrumentation.

For engineers reviewing the HZU10B2JTRF datasheet, HZU10B2JTRF pinout, HZU10B2JTRF application, or HZU10B2JTRF equivalent, key selection criteria include Zener voltage tolerance (±2.2% at 10.33 V nominal), low dynamic impedance, thermal stability across –55°C to +150°C storage range, and compatibility with automated SMT assembly due to TRF taping (3,000 pcs/reel).

Technical Context

This device uses a silicon planar junction structure optimized for stable Zener breakdown in the 10 V range. Its electrical behavior is characterized by tight voltage grading (B2 grade), pulse-tested Zener voltage (PW = 40 ms), and defined dynamic resistance measured at 5 mA test current.

The URP package (JEITA code PTSP0002ZA-A) enables high-density PCB layout with 0.8 mm body width and 1.5 mm length. Thermal derating follows Fig.3: power dissipation linearly decreases from 200 mW at 25°C to zero at 150°C ambient.

Key Specifications

Pinout & Package

Ultra-small Resin Package (URP, JEITA code PTSP0002ZA-A, SC-76A) with 0.8 mm × 1.5 mm × 0.6 mm dimensions and 0.004 g typical mass. Cathode marked with band on top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with BZX84-C10LT1G and MMSZ5240BT1G, HZU10B2JTRF offers superior voltage accuracy and lower dynamic impedance in a smaller URP package-critical for space-constrained, high-precision analog designs where regulation stability directly impacts system measurement fidelity.

Availability

HZU10B2JTRF is available at Aetrix Electronics and suitable for portable sensor reference, USB port overvoltage clamp, and industrial PLC input conditioning requiring stable component supply, consistent Zener voltage grading, and RoHS-compliant SMT packaging.

Supply support for HZU10B2JTRF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer headquartered in Japan, specializing in microcontrollers, analog power devices, and timing solutions for industrial, automotive, and consumer systems.

HZU10B2JTRF belongs to the HZU Series silicon planar Zener diodes-designed specifically for high-accuracy, low-profile voltage stabilization in space- and power-constrained applications such as portable instrumentation and industrial control interfaces.

FAQ

What is the Zener voltage range for HZU10B2JTRF?

The HZU10B2JTRF has a guaranteed Zener voltage range of 10.11 V to 10.55 V at 5 mA test current, corresponding to the B2 grade specification. This ±2.2% tolerance is tighter than B or B1 grades in the same series and reflects Renesas' binning for precision reference applications. The value is pulse-tested (40 ms) to eliminate self-heating effects, ensuring repeatability in production testing and final design validation.

Is HZU10B2JTRF suitable for automotive under-hood use?

HZU10B2JTRF supports junction temperatures up to 150°C and storage from –55°C to +150°C, meeting under-hood thermal requirements for non-safety-critical modules. However, it is classified as a Standard-grade Renesas product-not High Quality or Specific grade-so it is not qualified for ASIL-B/C automotive safety functions. For engine control or ADAS subsystems, consult Renesas' automotive-qualified Zener portfolio before selecting HZU10B2JTRF.

How does the URP package of HZU10B2JTRF compare to SOD-323?

The URP (SC-76A) package of HZU10B2JTRF measures 0.8 mm × 1.5 mm, making it ~30% narrower than the standard SOD-323 (1.3 mm × 1.7 mm). This enables routing traces between pads in dense layouts and reduces parasitic capacitance. Unlike SOD-323, URP has no cathode stripe-instead using a top-surface mark-and is optimized for TRF taping. Both packages share similar thermal resistance, but URP's smaller mass demands careful reflow profile tuning to avoid tombstoning.

What is the maximum reverse leakage current for HZU10B2JTRF?

HZU10B2JTRF specifies a maximum reverse leakage current (I_R) of 2 μA at V_R = 8.0 V and T_a = 25°C. This low leakage is critical in battery-powered applications where standby current directly impacts shelf life. At elevated temperatures (e.g., 85°C), leakage may rise to ~15 μA-still well below typical alternatives-making HZU10B2JTRF suitable for long-duration backup and sensor biasing circuits where quiescent power must remain sub-50 μW.

Can HZU10B2JTRF replace HZU10B3JTRF in a design?

No-HZU10B2JTRF and HZU10B3JTRF are distinct grade variants: B2 specifies 10.11–10.55 V, while B3 specifies 10.11–10.55 V *for HZU10 only*, but actual B3 data shows 10.11–10.55 V (same min/max) with different test sampling. More critically, B3 appears in later revisions with tighter process control; substituting B2 for B3 may violate design margin if the application relies on B3's statistical yield or thermal coefficient consistency. Always verify grade-specific datasheet revision applicability before interchange.