Renesas HZU10B2TRF-E

Overview

HZU10B2TRF-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage stabilization in low-power analog and power-supply feedback circuits, featuring a nominal Zener voltage of 10.11 V to 10.55 V at 5 mA, 7.0 Ω dynamic resistance, and 200 mW power dissipation in an ultra-small URP surface-mount package.

For engineers reviewing the HZU10B2TRF-E datasheet, HZU10B2TRF-E pinout, HZU10B2TRF-E application, or HZU10B2TRF-E equivalent, this device serves as a compact, tape-and-reel–ready voltage reference for space-constrained DC-DC converter feedback loops, sensor biasing networks, and overvoltage protection clamping stages where ±4.4% voltage tolerance and low temperature coefficient are critical.

Technical Context

The HZU10B2TRF-E operates as a two-terminal shunt regulator with reverse-biased junction behavior, optimized for stable operation at I_Z = 5 mA under pulse test conditions (PW = 40 ms). Its Zener voltage exhibits a positive temperature coefficient near +0.04 %/°C per the series' characteristic curve (Fig.2), enabling predictable drift compensation in ambient ranges up to +150 °C junction temperature.

Designed for surface-mount assembly on FR-4 PCBs, it leverages silicon planar process technology to achieve tight grading (B2 grade), low dynamic impedance, and repeatable breakdown characteristics without requiring external current-limiting resistors in low-current (<5 mA) stabilization roles.

Key Specifications

Pinout & Package

Ultra-small Resin Package (URP), also designated SC-76A or JEITA PTSP0002ZA-A, measures 1.55 mm × 0.80 mm × 0.45 mm (max height) with 2 terminals and weighs 0.004 g. Cathode marked by dot on top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with BZX84-C10LT1G and MMSZ5240BT1G, the HZU10B2TRF-E offers tighter V_Z grading and lower dynamic resistance in a smaller URP package, making it optimal for high-accuracy, space-constrained stabilization-though its 200 mW rating requires careful thermal derating in continuous-duty use.

Availability

HZU10B2TRF-E is available at Aetrix Electronics and suitable for DC-DC converter feedback, sensor bias reference, and overvoltage clamp applications requiring stable component supply, consistent Zener grading, and ultra-small SMT compatibility.

Supply support for HZU10B2TRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer headquartered in Japan, delivering microcontrollers, analog, power, and timing solutions for industrial, automotive, and consumer systems.

The HZU Series belongs to Renesas' discrete Zener diode product line, engineered specifically for compact, high-precision voltage stabilization in modern surface-mount power and signal conditioning circuits.

FAQ

What is the exact Zener voltage range for HZU10B2TRF-E at 5 mA?

The HZU10B2TRF-E has a guaranteed Zener voltage range of 10.11 V to 10.55 V when tested at I_Z = 5 mA, corresponding to the B2 grade per Renesas datasheet R07DS0423EJ1000 Rev.10.00. This 4.4% tolerance reflects tighter binning than standard B-grade devices and is validated using 40 ms pulse testing to avoid thermal drift artifacts. The HZU10B2TRF-E must be operated within this range to meet its specified dynamic resistance and temperature coefficient performance.

Is HZU10B2TRF-E RoHS compliant and lead-free?

Yes, the HZU10B2TRF-E is RoHS compliant and lead-free, consistent with Renesas Electronics' environmental policy and the EU RoHS Directive. The device uses lead-free solderability plating and halogen-free molding compound, as confirmed in Renesas' official compliance documentation and material declarations. No exemptions apply, and the HZU10B2TRF-E meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) requirements for unlimited floor life at ≤30 °C/60% RH.

What is the maximum reverse current specification for HZU10B2TRF-E?

The HZU10B2TRF-E specifies a maximum reverse current (I_R) of 2 μA at V_R = 7.0 V, measured at T_a = 25 °C. This low leakage ensures minimal parasitic loading in high-impedance reference networks, such as those used with op-amp buffers or ADC voltage dividers. Exceeding 7.0 V in reverse bias risks entering avalanche breakdown outside the Zener region, so the HZU10B2TRF-E must be operated strictly within its rated V_R and I_Z envelope.

Can HZU10B2TRF-E replace a 1N4740A in existing designs?

No, the HZU10B2TRF-E is not a direct replacement for the 1N4740A due to fundamental differences: the 1N4740A is a 10 V, 1 W through-hole Zener in DO-41 package, while the HZU10B2TRF-E is a 10.3 V, 200 mW surface-mount device in URP (SC-76A) package. Their power handling, thermal profiles, and mounting methods differ significantly. A redesign involving PCB layout, current-limiting resistor recalculation, and thermal validation is required before substituting HZU10B2TRF-E for 1N4740A.

What is the temperature coefficient behavior of HZU10B2TRF-E?

The HZU10B2TRF-E exhibits a positive temperature coefficient of approximately +0.04 %/°C near its 10.3 V operating point, as shown in Figure 2 of the Renesas datasheet. This means its Zener voltage increases by ~4.1 mV/°C over the −55 °C to +150 °C junction range. This predictable drift enables compensation in precision references, but designers must account for it in wide-temperature applications-especially when cascading with negative-TC components like silicon bandgap references.