Renesas HZU10B3TRF-E

Overview

HZU10B3TRF-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits, featuring a nominal Zener voltage of 10.11–10.55 V at 5 mA, 7.0 Ω dynamic resistance, and 200 mW power dissipation in an ultra-small URP (SC-76A) surface-mount package.

For engineers reviewing the HZU10B3TRF-E datasheet, HZU10B3TRF-E pinout, HZU10B3TRF-E application, or HZU10B3TRF-E equivalent, key selection criteria include Zener voltage tolerance (±2.2% typical), low dynamic impedance for stable regulation under varying load, thermal coefficient behavior near zero crossing (~0.02%/°C), and compatibility with high-density PCB layouts requiring minimal footprint.

Technical Context

This Zener diode operates in reverse breakdown mode with tightly controlled V_Z grading (B3 grade) and is characterized using pulsed test conditions (40 ms pulse width) to minimize self-heating effects. Its planar junction construction ensures repeatable breakdown characteristics and long-term stability under rated stress conditions.

The device exhibits a positive temperature coefficient near 10 V (≈ +0.02%/°C), enabling predictable drift compensation in reference designs. It is specified for operation across –55°C to +150°C storage and up to 150°C junction temperature, with derated power dissipation above 25°C ambient per Fig. 3.

Key Specifications

Pinout & Package

Ultra-small Resin Package (URP, JEITA code SC-76A) with 2-terminal surface-mount configuration; molded epoxy body, cathode marked by laser dot on top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Compared with BZX84-C10LT1G and MMSZ4686T1G, the HZU10B3TRF-E delivers superior voltage accuracy and smaller board area at the expense of lower power handling - optimal for compact, precision-referenced analog subsystems where layout density and regulation fidelity are prioritized.

Availability

HZU10B3TRF-E is available at Aetrix Electronics and suitable for portable sensor reference, industrial analog input, medical instrumentation bias, and automotive ECU sub-reference applications requiring stable component supply, consistent Zener voltage grading, and RoHS-compliant ultra-small packaging.

Supply support for HZU10B3TRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog power devices, and timing solutions, with headquarters in Tokyo and design centers worldwide.

The HZU Series belongs to Renesas' precision discrete portfolio, engineered specifically for compact, stable voltage reference and stabilization in space-constrained, low-power analog systems - emphasizing repeatability, thermal predictability, and SMT manufacturability.

FAQ

What is the exact Zener voltage range for HZU10B3TRF-E at 5 mA?

The HZU10B3TRF-E has a guaranteed Zener voltage range of 10.11 V to 10.55 V when tested at I_Z = 5 mA and T_a = 25°C, corresponding to the B3 grade per the Renesas R07DS0423EJ1000 datasheet. This ±2.2% tolerance enables high-accuracy reference design without trimming.

Is HZU10B3TRF-E suitable for use in automotive applications?

The HZU10B3TRF-E is rated for operation from –55°C to +150°C and meets standard reliability requirements, but it is classified as a "Standard" quality grade device per Renesas documentation. For AEC-Q200-compliant automotive ECUs, validation against specific stress profiles is required; it is commonly used in non-safety-critical sub-references such as LIN transceiver monitoring.

What is the thermal resistance and power derating behavior of HZU10B3TRF-E?

HZU10B3TRF-E has no published junction-to-ambient thermal resistance (R_θJA) due to its low-power nature, but Fig. 3 in the datasheet specifies linear derating: P_d decreases from 200 mW at 25°C ambient to zero at ~150°C. At 85°C ambient, usable power drops to approximately 120 mW - critical for sealed enclosure designs.

Does HZU10B3TRF-E have a defined temperature coefficient, and how does it affect long-term stability?

Yes - the HZU10B3TRF-E exhibits a positive temperature coefficient of approximately +0.02%/°C near 10 V, as shown in Fig. 2 of the datasheet. This low, predictable drift supports stable performance across industrial temperature ranges and simplifies compensation in multi-stage references where HZU10B3TRF-E serves as primary stabilization.

Can HZU10B3TRF-E replace older Zener diodes like 1N4740A in new designs?

HZU10B3TRF-E is not a direct drop-in replacement for through-hole diodes like 1N4740A due to its URP (SC-76A) package and different thermal profile. However, it provides superior voltage tolerance (±2.2% vs ±5%) and 75% smaller footprint. Redesign is required for pad layout and thermal relief, but HZU10B3TRF-E offers measurable improvements in accuracy and board density.