Renesas HZU11B2TRF-E

Overview

HZU11B2TRF-E from Renesas Electronics is a silicon planar Zener diode in an ultra-small resin package (URP/SC-76A), designed for precision voltage stabilization in low-power analog and power-supply feedback circuits. It delivers a nominal Zener voltage of 11.5 V (min 11.10 V, max 11.56 V) at 5 mA test current, with dynamic resistance of 8.0 Ω, reverse current ≤2 μA at 9.0 V, and 200 mW power dissipation - suitable for compact voltage reference and overvoltage protection in portable instrumentation.

For engineers reviewing the HZU11B2TRF-E datasheet, HZU11B2TRF-E pinout, HZU11B2TRF-E application, or HZU11B2TRF-E equivalent, key selection criteria include its B2-grade voltage tolerance (±2.3% at 11.5 V), URP surface-mount footprint (1.55 × 0.80 × 0.45 mm), thermal derating curve (Fig.3), and compatibility with pulse-tested Zener regulation in space-constrained DC-DC monitor paths.

Technical Context

This Zener diode operates in reverse breakdown mode to maintain stable voltage across its terminals under varying load and temperature conditions. Its planar junction construction ensures consistent breakdown characteristics and low leakage, with specified performance validated at Ta = 25°C using 40 ms pulse testing per Fig.3.

The device exhibits a negative temperature coefficient of approximately −0.04 %/°C near 11 V (per Fig.2), enabling predictable drift behavior in temperature-sensitive references. Its 200 mW absolute maximum power rating requires ambient temperature derating above 25°C, as defined by the Pd vs. Ta curve on Page 5.

Key Specifications

Pinout & Package

Package: Ultra-small Resin Package (URP), JEITA code SC-76A, dimensions 1.55 × 0.80 × 0.45 mm (L × W × H), mass 0.004 g. Cathode marked with band on top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with HZU11B2TRF-E, BZX84-C11LT1G offers lower unit cost but sacrifices 2.3× tighter voltage tolerance and 60% smaller footprint; MMSZ5240BT1G provides greater thermal headroom yet occupies 3.7× more PCB area - making HZU11B2TRF-E optimal for space-constrained, precision-stabilized 12 V subsystems.

Availability

HZU11B2TRF-E is available at Aetrix Electronics and suitable for portable instrumentation, industrial sensor interfaces, and automotive body electronics requiring stable component supply with guaranteed traceability and long-term continuity.

Supply support for HZU11B2TRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer headquartered in Japan, specializing in microcontrollers, analog and power devices, and SoC solutions for industrial, automotive, and enterprise markets.

HZU11B2TRF-E belongs to the HZU Series silicon planar Zener diodes - engineered for high-precision, low-leakage voltage stabilization in surface-mount power management and analog signal conditioning applications.

FAQ

What is the Zener voltage tolerance of HZU11B2TRF-E?

HZU11B2TRF-E has a B2-grade Zener voltage specification of 11.10 V to 11.56 V at 5 mA test current, corresponding to ±2.3% tolerance around the nominal 11.5 V value. This tighter tolerance than standard B-grade (±5%) or C-grade (±5%) Zeners makes HZU11B2TRF-E suitable for applications demanding higher regulation accuracy without external trimming.

Does HZU11B2TRF-E require derating at elevated temperatures?

Yes, HZU11B2TRF-E must be derated above 25°C ambient per the curve in Fig.3 of the datasheet. Its 200 mW maximum power dissipation linearly decreases to zero at 150°C junction temperature, resulting in ~160 mW usable power at 50°C ambient. Designers must calculate worst-case power (V_Z × I_Z) and apply this derating to ensure reliable long-term operation.

Is HZU11B2TRF-E RoHS compliant and lead-free?

Yes, HZU11B2TRF-E is RoHS compliant and features lead-free terminations and halogen-free molding compound, meeting IPC-J-STD-609A Class 1 requirements. The device carries no exemptions and conforms to EU Directive 2011/65/EU, verified through Renesas' material declarations and third-party lab testing.

What is the reverse leakage current specification for HZU11B2TRF-E?

HZU11B2TRF-E specifies a maximum reverse current (I_R) of 2 μA at V_R = 9.0 V and T_a = 25°C. This low leakage supports high-impedance bias networks and battery-powered systems where standby current must remain below 5 μA - critical for multi-year operation in wireless sensor nodes.

Can HZU11B2TRF-E be used in place of a 12 V Zener diode?

HZU11B2TRF-E is not a 12 V Zener; its rated Zener voltage range is 11.10–11.56 V at 5 mA. While it may serve in some 12 V feedback paths where ±5% tolerance is acceptable, it does not meet typical "12 V Zener" specifications (e.g., 12.0–12.6 V). For true 12 V regulation, Renesas' HZU12B3TRF-E (12.08–12.60 V) is the functionally matched variant in the same URP package.