Renesas HZU11C1LTRF-E

Overview

HZU11C1LTRF-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits, with a nominal Zener voltage of 11.0 V (B3 grade), 8.0 Ω dynamic resistance at 5 mA, and 200 mW power dissipation in an ultra-small URP surface-mount package - used in voltage reference rails for sensor signal conditioning and power supply feedback loops.

For engineers reviewing the HZU11C1LTRF-E datasheet, HZU11C1LTRF-E pinout, HZU11C1LTRF-E application, or HZU11C1LTRF-E equivalent, key selection criteria include Zener voltage tolerance (±4.2% at 11.10–11.56 V), low dynamic impedance for stable regulation under varying load, thermal derating behavior above 25°C, and compatibility with automated SMT assembly due to its tape-and-reel TRF packaging (3,000 pcs/reel).

Technical Context

This device operates as a two-terminal shunt regulator, maintaining a stable reverse-biased breakdown voltage across its cathode-anode terminals when current exceeds the knee threshold (~0.5 mA). Its silicon planar construction ensures repeatable Zener characteristics and low temperature coefficient near zero crossing (~−0.02 %/°C at 11 V).

The URP (Ultra Small Resin Package) features a SC-76A footprint (1.55 × 0.80 × 0.45 mm) with defined terminal positions: Pin 1 = Cathode (marked), Pin 2 = Anode. It is rated for junction temperatures up to 150°C and storage from –55°C to +150°C, supporting operation in compact industrial and automotive cabin electronics.

Key Specifications

Pinout & Package

Package: Ultra Small Resin Package (URP), JEITA code PTSP0002ZA-A, SC-76A outline, dimensions 1.55 × 0.80 × 0.45 mm (L × W × H), mass 0.004 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with MMSZ5242BT1G and BZX584-C11, the HZU11C1LTRF-E offers tighter voltage tolerance (±4.2% vs. ±5%), lower dynamic resistance (8.0 Ω vs. ≥9.5 Ω), and the smallest available footprint in its class - making it optimal for next-generation miniaturized power management and precision analog designs where space and regulation stability are critical.

Availability

HZU11C1LTRF-E is available at Aetrix Electronics and suitable for industrial sensor interfaces, low-power voltage reference rails, switching power supply feedback networks, and overvoltage protection clamps requiring stable component supply with consistent parametric performance across production lots.

Supply support for HZU11C1LTRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer headquartered in Japan, specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and infrastructure markets.

The HZU Series belongs to Renesas' discrete Zener diode product line, engineered specifically for high-accuracy, low-profile voltage stabilization in space-constrained and thermally demanding applications - emphasizing repeatability, tight grading, and SMT manufacturability.

FAQ

What is the Zener voltage tolerance for HZU11C1LTRF-E?

The HZU11C1LTRF-E has a Zener voltage range of 11.10 V to 11.56 V at 5 mA test current, corresponding to a ±4.2% tolerance around the nominal 11.0 V rating. This B3-grade specification is tighter than standard B/B1/B2 variants and is confirmed in the Electrical Characteristics table on page 2 of the R07DS0423EJ1000 datasheet. The HZU11C1LTRF-E achieves this via post-process binning and is intended for applications requiring higher initial accuracy without trimming.

Does HZU11C1LTRF-E support automatic optical inspection (AOI) during SMT assembly?

Yes, the HZU11C1LTRF-E supports AOI due to its clearly marked cathode (Pin 1) with laser-etched "11·" symbol on the URP package top surface, as shown in the Mark Code table on page 4 of the datasheet. Its consistent SC-76A footprint and uniform solderable terminations enable reliable detection and alignment verification in high-speed placement systems - critical for yield assurance in consumer electronics manufacturing.

What is the maximum reverse current for HZU11C1LTRF-E at 9.0 V?

The maximum reverse current (I_R) for HZU11C1LTRF-E is 2 µA at V_R = 9.0 V, as specified in the Electrical Characteristics table on page 2 of the R07DS0423EJ1000 datasheet. This low leakage ensures minimal loading on high-impedance reference nodes and makes the HZU11C1LTRF-E suitable for precision biasing in battery-powered instrumentation where standby current must be minimized.

Can HZU11C1LTRF-E be used in automotive cabin applications?

Yes, the HZU11C1LTRF-E is qualified for Standard-grade automotive cabin applications per Renesas' quality classification (page 6, Note 7), including infotainment systems, HVAC controls, and body electronics. Its –55°C to +150°C storage range, 150°C max junction temperature, and robust URP package withstand thermal cycling and vibration typical of non-engine-compartment environments - though it is not rated for "High Quality" safety-critical subsystems.

How does the power derating curve affect HZU11C1LTRF-E's usable dissipation at 70°C ambient?

Per Figure 3 (Power Dissipation vs. Ambient Temperature) on page 5 of the datasheet, the HZU11C1LTRF-E's allowable power dissipation drops linearly from 200 mW at 25°C to approximately 100 mW at 70°C ambient. This derating ensures junction temperature remains below 150°C; designers must limit average DC current to ≤9 mA at 11 V to stay within safe operating limits - critical for sustained operation in sealed enclosures.