Renesas HZU13B3TRF-E

Overview

HZU13B3TRF-E from Renesas Electronics is a silicon planar Zener diode in ultra-small URP (SC-76A) surface-mount package, designed for precision voltage stabilization in low-power circuits. It delivers a nominal Zener voltage of 13.37–13.96 V at 5 mA test current, with dynamic resistance of 35 Ω max and power dissipation up to 200 mW at 25°C ambient - used in voltage reference and overvoltage protection circuits for portable instrumentation and sensor signal conditioning.

For engineers reviewing the HZU13B3TRF-E datasheet, HZU13B3TRF-E pinout, HZU13B3TRF-E application, or HZU13B3TRF-E equivalent, key selection considerations include its B3-grade voltage tolerance (±2.2% typical), low thermal coefficient (−0.04 %/°C near 13 V), cathode-anode polarity marking, and compatibility with reflow soldering per JEDEC J-STD-020.

Technical Context

The HZU13B3TRF-E operates as a two-terminal voltage reference device relying on controlled reverse-biased Zener breakdown. Its junction temperature is rated to 150°C, and it is characterized under pulsed test conditions (40 ms pulse width) to minimize self-heating effects during measurement.

It belongs to the HZU Series' highest-grade B3 binning group, offering tighter Zener voltage distribution than B1/B2 variants. The URP package enables high-density PCB layouts with 0.8 mm body height and 1.5 mm × 1.25 mm footprint, supporting automated pick-and-place assembly.

Key Specifications

Pinout & Package

URP (Ultra-small Resin Package) is a 2-pin surface-mount package conforming to SC-76A outline, with 0.8 mm profile and taping for automated assembly. Cathode is marked by a visible band on the top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with BZX84-C13-7-F and MMSZ5242B-TP, the HZU13B3TRF-E provides superior voltage precision (±2.2% vs. ±5%), smaller URP footprint (1.5 × 1.25 mm), and lower thermal profile - making it optimal for miniaturized, high-accuracy analog subsystems where board area and regulation stability are critical.

Availability

HZU13B3TRF-E is available at Aetrix Electronics and suitable for portable instrumentation, industrial analog I/O modules, and low-power MCU reference designs requiring stable component supply with guaranteed long-term continuity.

Supply support for HZU13B3TRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer headquartered in Japan, specializing in microcontrollers, analog power devices, and timing solutions for industrial, automotive, and consumer markets.

The HZU Series was developed specifically for compact, high-reliability voltage stabilization in space-constrained surface-mount applications - emphasizing tight voltage grading, low-profile packaging, and robust thermal performance in ambient temperatures up to +125°C.

FAQ

What is the Zener voltage tolerance of HZU13B3TRF-E?

The HZU13B3TRF-E has a Zener voltage range of 13.37 V to 13.96 V at 5 mA test current, corresponding to the B3 grade - a tighter tolerance than B1/B2 variants in the HZU Series. This ±2.2% spread ensures predictable regulation behavior in precision analog circuits without requiring external calibration. The HZU13B3TRF-E achieves this consistency through factory binning and pulse-tested characterization per R07DS0423EJ1000 Rev.10.00.

Is HZU13B3TRF-E suitable for reflow soldering?

Yes, the HZU13B3TRF-E uses an epoxy-molded URP (SC-76A) package rated for standard lead-free reflow profiles per JEDEC J-STD-020. Its glass-epoxy substrate and Cu foil terminations withstand peak temperatures up to 260°C for 30 seconds. The HZU13B3TRF-E's 0.8 mm profile also minimizes tombstoning risk during reflow, and its cathode marking supports automated optical alignment. Always verify thermal profile against your specific PCB stack-up.

What is the maximum reverse leakage current for HZU13B3TRF-E?

The HZU13B3TRF-E specifies a maximum reverse leakage current (I_R) of 2 µA at V_R = 10.0 V and T_a = 25°C. This low leakage supports high-impedance reference nodes and battery-operated applications where standby current must remain below 5 µA. The HZU13B3TRF-E maintains this spec across its full storage temperature range (−55°C to +150°C), though actual leakage increases exponentially with junction temperature.

How does the dynamic resistance of HZU13B3TRF-E affect regulation performance?

The HZU13B3TRF-E has a maximum dynamic resistance (r_d) of 35 Ω at I_Z = 5 mA, meaning a 1 mA change in Zener current causes ≤35 mV output variation. This directly impacts load regulation: for example, a 2 mA load step induces <70 mV deviation in the stabilized voltage. The HZU13B3TRF-E's low r_d makes it suitable for driving moderate-impedance loads without additional buffering, unlike higher-r_d Zeners that require op-amp followers.

What package code corresponds to HZU13B3TRF-E?

The HZU13B3TRF-E uses the URP (Ultra-small Resin Package) with JEITA code SC-76A and Renesas package code STSP0002ZA-A. Its dimensions are 1.5 mm × 1.25 mm × 0.8 mm, with 0.65 mm pin pitch and cathode marked on the top surface. The "TRF" suffix indicates tape-and-reel packaging with 3,000 units per reel - confirmed in the Ordering Information table of R07DS0423EJ1000 Rev.10.00. This matches the physical layout shown in the Pin Arrangement diagram on page 1.