Renesas HZU15B2JTRF-E

Overview

HZU15B2JTRF-E from Renesas Electronics is a silicon epitaxial planar Zener diode optimized for hard-knee, low-noise voltage reference applications. It delivers a nominal Zener voltage of 15 V at 0.5 mA, with dynamic resistance of 380 Ω (typ), reverse current ≤100 nA at 12 V, and temperature coefficient of −0.04 mV/°C - enabling precision biasing in analog front-ends and sensor signal conditioning circuits.

For engineers reviewing the HZU15B2JTRF-E datasheet, HZU15B2JTRF-E pinout, HZU15B2JTRF-E application, or HZU15B2JTRF-E equivalent, key selection criteria include its ultra-low noise voltage (≈1/3–1/10 that of standard HZU series), semi-logarithmic V_Z–I_Z linearity from 1 nA to 1 mA, and suitability for space-constrained surface-mount designs requiring stable low-current references.

Technical Context

The HZU15B2JTRF-E belongs to the HZU-LL Series, engineered specifically for hard-knee Zener behavior and reduced noise generation. Its Zener voltage is specified at I_Z = 0.5 mA, with ∆V_Z = V_Z(0.5 mA) – V_Z(0.05 mA) = 0.5 V - confirming tight low-current regulation fidelity.

It exhibits a temperature coefficient of −0.04 mV/°C (≈1/2 that of the legacy HZU series), and operates within a junction temperature range of −55°C to +150°C. The device uses silicon epitaxial planar construction and is housed in an ultra-small resin package (URP, JEITA code PTSP0002ZA-A) with SC-76A footprint.

Key Specifications

Pinout & Package

Package: Ultra Small Resin Package (URP), JEITA code PTSP0002ZA-A, SC-76A outline, mass ≈0.004 g. Dimensions: A1 = 0.15–0.45 mm, A2 = 0.75–1.05 mm, b = 1.55–1.85 mm, D = 2.35–2.65 mm, E = 0.80 mm, e1 = 1.5 mm, l1 = 0.8 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener reference applications.

Compared with BZX84-C15LT1G and MMSZ5245B-TP, the HZU15B2JTRF-E provides superior low-noise operation, tighter low-current regulation, and halved temperature coefficient - making it the preferred choice for high-fidelity analog signal chains where reference integrity directly impacts measurement resolution.

Availability

HZU15B2JTRF-E is available at Aetrix Electronics and suitable for high-precision sensor biasing, low-power analog front-end reference, and industrial signal conditioning requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for HZU15B2JTRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer specializing in microcontrollers, analog power devices, and precision analog components for industrial, automotive, and infrastructure applications.

The HZU-LL Series was designed specifically to address demand for ultra-low-noise, hard-knee Zener references in space-constrained, thermally variable environments - targeting high-resolution data acquisition and sensor interface systems.

FAQ

What is the Zener voltage tolerance of HZU15B2JTRF-E at 0.5 mA?

The HZU15B2JTRF-E has a Zener voltage range of 14.3 V (minimum) to 15.7 V (maximum) at I_Z = 0.5 mA, corresponding to ±4.7% tolerance. This specification is confirmed in the Electrical Characteristics table of the official Renesas datasheet REJ03G1216-0500 Rev.5.00. The device's hard-knee behavior ensures this tolerance holds consistently across its operational current range, making HZU15B2JTRF-E suitable for applications demanding repeatable low-current reference accuracy.

Does HZU15B2JTRF-E support operation below 1 µA?

Yes, the HZU15B2JTRF-E exhibits semi-logarithmic linear V_Z–I_Z characteristics from I_Z = 1 nA up to 1 mA, as explicitly stated in the Features section of the Renesas datasheet. This enables reliable reference generation in ultra-low-power wake-up circuits and energy-harvesting systems where bias currents fall well below 1 µA. The device maintains defined Zener voltage behavior even at these sub-microamp levels, distinguishing HZU15B2JTRF-E from conventional Zeners with undefined knee behavior at low currents.

What is the maximum power dissipation for HZU15B2JTRF-E at 70°C ambient?

Per Figure 3 in the Renesas datasheet REJ03G1216-0500, the HZU15B2JTRF-E's power dissipation derates linearly from 150 mW at 25°C to approximately 90 mW at 70°C ambient temperature. This derating follows the specified thermal resistance profile and must be observed to maintain junction temperature ≤150°C. Designers using HZU15B2JTRF-E in thermally constrained enclosures should apply this derated value - not the 150 mW rating - when calculating worst-case power budget and thermal margin.

Is HZU15B2JTRF-E RoHS compliant and lead-free?

Yes, HZU15B2JTRF-E is RoHS compliant and lead-free, consistent with Renesas Electronics' environmental policy and the "Notice" section of datasheet REJ03G1216-0500. The device meets EU RoHS Directive requirements for restricted substances, including Pb, Cd, Hg, Cr(VI), PBB, and PBDE. This compliance is verified through Renesas' material declarations and applies to all standard production lots of HZU15B2JTRF-E supplied by authorized distributors and Aetrix Electronics.

How does the noise performance of HZU15B2JTRF-E compare to standard Zener diodes?

The HZU15B2JTRF-E delivers approximately 1/3 to 1/10 the noise voltage of standard HZU-series Zeners, as stated in the Features section of the Renesas datasheet. This reduction stems from optimized silicon epitaxial planar structure and process control targeting low 1/f and broadband noise. In practice, this translates to measurable improvement in SNR for precision ADC references and low-noise amplifier bias networks - a distinction confirmed by Renesas' comparative characterization, not inferred. The low-noise advantage is intrinsic to HZU15B2JTRF-E and requires no external filtering to realize.