Renesas HZU18B2JTRF

Overview

HZU18B2JTRF from Renesas Electronics is a silicon epitaxial planar Zener diode optimized for hard-knee, low-noise voltage reference applications, with nominal Zener voltage 1.9 V (min) to 2.3 V (max) at I_Z = 0.5 mA, dynamic resistance 350 Ω (typ), and ultra-low noise voltage (~1/3–1/10 of standard HZU series). It operates in surface-mount URP (Ultra small Resin Package) and targets precision analog front-ends in portable instrumentation.

For engineers reviewing the HZU18B2JTRF datasheet, HZU18B2JTRF pinout, HZU18B2JTRF application, or HZU18B2JTRF equivalent, key selection criteria include its semi-logarithmic V_Z–I_Z linearity (1 nA to 1 mA), temperature coefficient reduction (~½ that of HZU series), and suitability for low-power, noise-sensitive biasing in battery-operated sensor interfaces.

Technical Context

The HZU18B2JTRF belongs to the HZU-LL Series, engineered specifically for hard-knee Zener behavior with tightly controlled knee sharpness and minimal voltage hysteresis. Its V_Z–I_Z curve exhibits semi-logarithmic linearity across six decades of reverse current (1 nA to 1 mA), enabling stable reference generation even under microampere-level bias conditions.

It achieves ultra-low noise via epitaxial planar construction and optimized junction geometry, resulting in ~70% lower RMS noise voltage versus legacy HZU parts. The device's temperature coefficient is specified as −1.0 mV/°C (typ) at V_Z ≈ 2.1 V, supporting high-stability operation without external compensation in ambient ranges up to +85°C.

Key Specifications

Pinout & Package

Package: Ultra small Resin Package (URP), JEITA code PTSP0002ZA-A, Renesas code SC-76A, mass 0.004 g. Dimensions: A1 = 0.15–0.45 mm, A2 = 0.75–1.05 mm, b = 1.55–1.85 mm, D = 0.80 mm, E = 2.30–2.50 mm, e1 = 1.10–1.40 mm, l1 = 0.80 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener reference applications.

Compared with MMSZ4678T1G and BZX84-C2V0LT1G, the HZU18B2JTRF delivers verified hard-knee behavior, quantified noise reduction, and guaranteed semi-log linearity-making it the sole choice when sub-1 µV_RMS noise and <±20 mV thermal drift are design requirements.

Availability

HZU18B2JTRF is available at Aetrix Electronics and suitable for portable medical sensors, low-power data acquisition systems, and wearable biopotential front-ends requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for HZU18B2JTRF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer specializing in microcontrollers, analog power, and mixed-signal solutions for automotive, industrial, and IoT applications.

The HZU-LL Series was developed to address demand for ultra-low-noise, hard-knee Zener diodes in precision analog signal chains-specifically targeting portable instrumentation, medical sensing, and high-resolution data converters.

FAQ

What is the exact Zener voltage range for HZU18B2JTRF at 0.5 mA test current?

The HZU18B2JTRF has a guaranteed Zener voltage range of 1.9 V (minimum) to 2.3 V (maximum) when measured at I_Z = 0.5 mA and T_a = 25°C. This 0.4 V span reflects the "B" grade within the HZU-LL Series and is confirmed in the Electrical Characteristics table on page 2 of REJ03G1216-0500 Rev.5.00. The typical value is approximately 2.1 V.

Does HZU18B2JTRF support operation below 1 µA reverse current?

Yes, the HZU18B2JTRF maintains semi-logarithmic V_Z–I_Z linearity down to I_Z = 1 nA, as explicitly stated in the Features section of the datasheet. This enables stable reference generation in ultra-low-power modes-for example, in wake-on-event sensor nodes where bias current must remain below 100 nA between measurements.

What is the thermal performance limit for continuous operation of HZU18B2JTRF?

The HZU18B2JTRF has a maximum junction temperature (T_j) of 150°C and a storage temperature range of −55°C to +150°C. Its power dissipation derates linearly above 25°C ambient, reaching zero at ~125°C per Fig.3. For PCB designs with standard 1.6 mm FR-4 and 1 oz Cu, sustained operation at 100°C ambient requires P_d ≤ 75 mW to maintain T_j < 130°C.

Is HZU18B2JTRF RoHS-compliant and lead-free?

Yes, HZU18B2JTRF is RoHS-compliant and lead-free. Renesas confirms compliance with EU RoHS Directive 2011/65/EU in its product change notifications and material declarations. The URP package uses lead-free solderable terminations and halogen-free molding compound, consistent with Renesas' standard environmental policy.

How does the noise performance of HZU18B2JTRF compare to standard Zener diodes?

HZU18B2JTRF delivers approximately 1/3 to 1/10 the RMS noise voltage of conventional HZU-series Zeners, due to epitaxial planar process optimization and junction geometry refinement. This is a measured specification-not an estimate-and directly improves signal-to-noise ratio in reference-dependent circuits such as precision ADCs and low-noise amplifiers using the HZU18B2JTRF.