Renesas HZU20B1TRF-E

Overview

HZU20B1TRF-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits, featuring a nominal Zener voltage of 20.88 V to 21.77 V at 5 mA test current, 50 Ω dynamic resistance, and 200 mW power dissipation in an ultra-small URP (SC-76A) surface-mount package.

For engineers reviewing the HZU20B1TRF-E datasheet, HZU20B1TRF-E pinout, HZU20B1TRF-E application, or HZU20B1TRF-E equivalent, key selection criteria include Zener voltage tolerance (±2.2% at 20.88–21.77 V), low dynamic impedance for stable regulation under varying load, thermal derating per Fig.3, and compatibility with automated SMT assembly due to its taped 3,000-piece reel format.

Technical Context

The HZU20B1TRF-E operates as a two-terminal shunt regulator, maintaining a stable reverse-biased breakdown voltage across its cathode-anode terminals when forward current remains below 2 µA and Zener current is held at 5 mA. Its silicon planar construction ensures repeatable breakdown characteristics and low temperature coefficient near zero crossing (~±0.02 %/°C at ~20 V, per Fig.2).

Designed for ambient temperatures from –55 °C to +150 °C, it supports operation up to 150 °C junction temperature with derated power dissipation (e.g., ~120 mW at +85 °C, per Fig.3). The device requires no external biasing circuitry and functions independently as a passive voltage reference node in feedback paths or supply rail clamping.

Key Specifications

Pinout & Package

Ultra-small Resin Package (URP), also known as SC-76A, is a surface-mount, two-terminal plastic package measuring 0.8 mm × 1.5 mm with 0.45 mm nominal height and 0.004 g typical mass. Cathode is marked with a visible band on the top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with BZX84-C20LT1G and MMSZ5248B-TP, the HZU20B1TRF-E delivers tighter voltage tolerance (±2.2% vs. ±5%), lower dynamic impedance (50 Ω vs. ≥70 Ω), and smaller URP footprint-making it optimal for space-constrained, high-accuracy reference designs where thermal derating and long-term stability are prioritized.

Availability

HZU20B1TRF-E is available at Aetrix Electronics and suitable for industrial sensor signal conditioning, portable device power rail clamping, and programmable logic controller reference applications requiring stable component supply, consistent Zener voltage grading, and RoHS-compliant surface-mount packaging.

Supply support for HZU20B1TRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer headquartered in Japan, specializing in microcontrollers, analog and power devices, and advanced SoCs for industrial, automotive, and infrastructure markets.

The HZU Series belongs to Renesas' silicon planar Zener diode product line, engineered specifically for stable, low-drift voltage reference and clamping in space-limited, high-reliability industrial and medical electronics.

FAQ

What is the Zener voltage range specified for HZU20B1TRF-E?

The HZU20B1TRF-E has a guaranteed Zener voltage range of 20.88 V to 21.77 V when tested at I_Z = 5 mA and T_a = 25 °C. This ±2.2% tolerance reflects Grade B1 binning per the Renesas datasheet R07DS0423EJ1000 Rev.10.00, making it suitable for applications demanding tighter regulation than standard ±5% Zeners. The HZU20B1TRF-E achieves this consistency through process-controlled silicon planar junction fabrication.

Does HZU20B1TRF-E support operation at elevated ambient temperatures?

Yes, the HZU20B1TRF-E is rated for storage and operation from –55 °C to +150 °C, with a maximum junction temperature of 150 °C. Its power dissipation must be derated linearly above 25 °C ambient - for example, to approximately 120 mW at +85 °C (per Fig.3 in the datasheet). This thermal behavior is critical when deploying the HZU20B1TRF-E in enclosed industrial enclosures or near heat-generating components.

What package type and dimensions does HZU20B1TRF-E use?

The HZU20B1TRF-E uses the Ultra-small Resin Package (URP), also designated SC-76A or JEITA code PTSP0002ZA-A, with nominal dimensions of 0.8 mm × 1.5 mm and height ≤ 0.45 mm. It weighs approximately 0.004 g and features a cathode-marked top surface. This compact footprint enables high-density layout in wearables, sensor nodes, and miniaturized instrumentation where board space is constrained - a key advantage of the HZU20B1TRF-E over larger SOD-123 or DO-35 alternatives.

How does the dynamic resistance of HZU20B1TRF-E affect its regulation performance?

The HZU20B1TRF-E specifies a maximum dynamic resistance (r_d) of 50 Ω at I_Z = 5 mA, meaning its output voltage changes by ≤50 mV per 1 mA change in Zener current. This low impedance directly improves load and line regulation - for instance, a 2 mA load step induces only ~100 mV output shift. That performance makes the HZU20B1TRF-E especially valuable in precision analog circuits where reference stability under varying conditions is essential.

Is HZU20B1TRF-E RoHS compliant and lead-free?

Yes, the HZU20B1TRF-E is RoHS compliant and lead-free, as confirmed by Renesas Electronics' environmental documentation and material declarations. The device meets EU Directive 2011/65/EU requirements and contains no intentionally added lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE). This compliance is integral to the HZU20B1TRF-E's qualification for use in commercial and industrial electronics sold globally.