Renesas HZU20B3TRF-E

Overview

HZU20B3TRF-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits, featuring a nominal Zener voltage of 20.21 V to 21.08 V at 5 mA test current, 50 Ω dynamic resistance, and 200 mW power dissipation in an ultra-small URP (SC-76A) surface-mount package.

For engineers reviewing the HZU20B3TRF-E datasheet, HZU20B3TRF-E pinout, HZU20B3TRF-E application, or HZU20B3TRF-E equivalent, key selection criteria include Zener voltage tolerance (±2.2% at 20 V), low temperature coefficient (≈+0.04 %/°C), pulse-tested stability, and compatibility with automated SMT assembly on space-constrained PCBs.

Technical Context

This device operates as a two-terminal shunt regulator, maintaining stable output voltage across varying load currents by conducting reverse-biased Zener breakdown. Its electrical behavior is defined under pulsed conditions (PW = 40 ms) to limit self-heating, with specified reverse current ≤2 μA at VR = 15.0 V and maximum junction temperature of 150°C.

The HZU20B3TRF-E belongs to the HZU Series' B3 grade tier, offering tighter VZ tolerance than B1/B2 variants within the same voltage family. It uses silicon planar construction for consistent breakdown characteristics and is delivered in TRF taping (3,000 pcs/reel) compatible with standard pick-and-place equipment.

Key Specifications

Pinout & Package

Ultra-small Resin Package (URP), also designated SC-76A or JEITA PTSP0002ZA-A, measures 0.8 mm × 0.8 mm with 0.45 mm nominal height and 0.65 mm lead pitch. Mass: 0.004 g (typ.).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with MMSZ5255B-TP and BZX84-C20LT1G, the HZU20B3TRF-E offers superior voltage accuracy (±2.2% vs. ±5%), smallest footprint (0.8 mm² vs. ≥1.7 mm²), and optimized thermal performance for space-constrained, low-drift reference designs - though at lower absolute power rating.

Availability

HZU20B3TRF-E is available at Aetrix Electronics and suitable for portable sensor reference, industrial signal conditioning, automotive body control, and consumer audio power supply applications requiring stable component supply, tight Zener voltage tolerance, and ultra-compact surface-mount packaging.

Supply support for HZU20B3TRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer headquartered in Japan, specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and computing markets.

The HZU Series is part of Renesas' discrete voltage reference portfolio, engineered specifically for high-accuracy, low-power stabilization in miniaturized electronic systems where thermal stability and SMT compatibility are critical.

FAQ

What is the Zener voltage range of the HZU20B3TRF-E?

The HZU20B3TRF-E has a guaranteed Zener voltage range of 20.21 V to 21.08 V when tested at 5 mA Zener current (I_Z). This B3-grade specification reflects ±2.2% tolerance around the nominal 20 V rating, verified under pulsed conditions (PW = 40 ms) to ensure thermal stability during measurement. The HZU20B3TRF-E maintains this range across its qualified operating temperature span.

Is the HZU20B3TRF-E suitable for surface-mount assembly?

Yes, the HZU20B3TRF-E uses the URP (SC-76A) package - a 0.8 mm × 0.8 mm ultra-small resin package with standardized 0.65 mm lead pitch - fully compatible with automated pick-and-place and reflow soldering processes. Its TRF taping format (3,000 pcs/reel) aligns with industry-standard feeders, and the cathode/anode marking supports optical recognition during placement. The HZU20B3TRF-E is explicitly rated for surface-mount design per Renesas documentation.

What is the maximum power dissipation of the HZU20B3TRF-E?

The HZU20B3TRF-E has a maximum power dissipation (P_d) of 200 mW at ambient temperature (T_a) = 25°C, as specified in the Absolute Maximum Ratings table. Derating is required above 25°C per Figure 3 in the datasheet, reaching zero dissipation at 150°C. This rating applies to continuous DC operation and is validated using pulsed testing (PW = 40 ms) to avoid self-heating effects - a key constraint when designing with the HZU20B3TRF-E in thermally constrained layouts.

Does the HZU20B3TRF-E have a specified temperature coefficient?

Yes, the HZU20B3TRF-E exhibits a positive temperature coefficient of approximately +0.04 %/°C near its 20 V Zener voltage, as shown in Figure 2 of the datasheet. This value quantifies how much the Zener voltage shifts per degree Celsius change in junction temperature - critical for predicting reference drift in non-temperature-controlled environments. The HZU20B3TRF-E's low TC contributes directly to its suitability in precision analog circuits where long-term stability is required.

How does the dynamic resistance of the HZU20B3TRF-E affect circuit performance?

The HZU20B3TRF-E has a maximum dynamic resistance (r_d) of 50 Ω at I_Z = 5 mA, which determines how tightly it regulates voltage under varying load current. Lower r_d yields better line and load regulation - for example, a 1 mA load change causes only ~50 mV output shift. This makes the HZU20B3TRF-E effective in low-noise reference and clamping applications where ripple rejection and stability are essential design goals.