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Renesas HZU22B3JTRF-E
- Part No.:
- HZU22B3JTRF-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZU22B3JTRF-E.pdf
- Description:
- DIODE ZENER
- Quantity:
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Inventory:57,305
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Product details
Overview
HZU22B3JTRF-E from Renesas Electronics is a silicon epitaxial planar Zener diode optimized for hard-knee, low-noise voltage reference applications, with nominal Zener voltage 2.2 V at 0.5 mA, dynamic resistance 350 Ω (typ), and temperature coefficient −1.0 mV/°C. It uses ultra-small URP (SC-76A) surface-mount packaging and delivers stable regulation in precision analog front-ends.
For engineers reviewing the HZU22B3JTRF-E datasheet, HZU22B3JTRF-E pinout, HZU22B3JTRF-E application, or HZU22B3JTRF-E equivalent, key selection criteria include low-noise voltage performance (≈1/3–1/10 of standard HZU series), reduced temperature drift, semi-logarithmic VZ-IZ linearity from 1 nA to 1 mA, and compatibility with high-density PCB layouts requiring minimal footprint.
Technical Context
The HZU22B3JTRF-E implements a hard-knee Zener structure with epitaxial planar junction technology to achieve tight low-current regulation and minimized noise generation. Its VZ-IZ curve follows semi-logarithmic linearity across six decades (1 nA–1 mA), enabling predictable behavior in micropower biasing and sub-µA reference circuits.
Designed for ambient operation up to +125°C, it maintains specified Zener voltage accuracy under thermal stress while limiting power dissipation to 150 mW at Ta = 25°C. Junction temperature is rated to 150°C, and storage range spans −55°C to +150°C - supporting industrial-grade reliability without derating in compact thermal environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage VZ | 2.2 V (min 1.9 V, max 2.3 V at IZ = 0.5 mA) - defines precise low-voltage reference point for analog signal conditioning |
| Dynamic Resistance ZZT | 350 Ω (typ at IZT = 0.5 mA) - determines output impedance and load regulation sensitivity |
| Temperature Coefficient γZ | −1.0 mV/°C (typ) - enables stable reference over temperature with <0.1% drift per 10°C |
| Reverse Current IR | 100 nA (max at VR = 1.2 V) - ensures minimal leakage in high-impedance bias networks |
| Power Dissipation Pd | 150 mW (max at Ta = 25°C) - sets upper limit for continuous DC operation on standard FR-4 PCBs |
| Junction Temperature Tj | 150°C (max) - supports operation in thermally constrained enclosures without active cooling |
Pinout & Package
Package: Ultra-small Resin Package (URP), JEITA code PTSP0002ZA-A, SC-76A outline, mass ≈ 0.004 g. Dimensions: 1.10 mm × 0.80 mm × 0.45 mm (L × W × H), compatible with 0402-class placement equipment.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to regulated output node; polarity mark indicates cathode side for correct orientation during placement |
| 2 | Anode | Connected to ground or current-source return; reverse-biased configuration requires anode at lower potential than cathode |
Key Features
| Feature | Design Value |
|---|---|
| Low-noise voltage reference | ≈1/3–1/10 lower noise than standard HZU series - improves SNR in precision ADC biasing and sensor excitation |
| Hard-knee Zener characteristic | Semi-logarithmic VZ-IZ linearity from 1 nA to 1 mA - enables stable regulation even at µA-level bias currents |
| Reduced temperature drift | ≈1/2 lower γZ vs. HZU series - minimizes calibration burden in wide-temperature industrial sensors |
| Ultra-compact surface-mount package | URP (SC-76A) footprint - saves >60% board area vs. SOD-323, supports high-density mixed-signal layout |
Applications
| Portable Medical Sensors | Industrial RTD Signal Conditioning |
|---|---|
Use Scenario: Battery-powered wearable ECG front-end requiring stable 2.2 V reference for op-amp biasing and ADC reference under varying temperature. IC Role / Device Role / Timing Role: Low-noise Zener reference providing fixed voltage node for analog signal chain biasing and scaling. Use Value: Enables <1 µVpp noise contribution and <±0.5 mV total drift over −20°C to +70°C without trimming. | Use Scenario: 4-wire RTD measurement module in factory automation PLC I/O card operating at 85°C ambient. IC Role / Device Role / Timing Role: Precision voltage reference for constant-current source driving platinum RTD element. Use Value: Maintains <0.05% full-scale error over temperature due to −1.0 mV/°C γZ and 350 Ω ZZT. |
| Low-Power IoT Node Voltage Reference | High-Density Data Acquisition Front-End |
Use Scenario: Sub-µA sleep-mode sensor node using wake-up timer and SAR ADC, where reference must operate down to 100 nA. IC Role / Device Role / Timing Role: Micropower Zener reference supplying regulated voltage to ultra-low-IQ LDO and ADC reference input. Use Value: Delivers stable 2.2 V with <10 ppm/°C effective TC and usable down to 1 nA - extends battery life by 30% vs. larger-footprint alternatives. | Use Scenario: 16-channel simultaneous-sampling DAQ board with space-constrained analog section and shared reference rail. IC Role / Device Role / Timing Role: Compact, low-drift reference source shared across multiple instrumentation amplifiers and ADCs. Use Value: URP package allows placement within 0.5 mm of each channel's analog IC, reducing trace-induced noise coupling by >20 dB. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener reference applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor MMBZ5222BS | Zener voltage 2.4 V (±5%), ZZT = 600 Ω (typ), γZ = −2.5 mV/°C, SOT-23 package | Higher voltage tolerance and drift; less suitable for sub-2.3 V precision references | Choose when 2.4 V nominal and higher power handling (350 mW) are acceptable trade-offs for cost-sensitive designs |
| Vishay BZX84-C2V4 | Zener voltage 2.4 V (±5%), ZZT = 600 Ω (typ), γZ = −2.5 mV/°C, SOT-23 package | Larger dynamic resistance and higher TC reduce accuracy in low-drift systems | Select only for non-critical biasing where 2.4 V and ±5% tolerance meet requirements and URP footprint is not mandatory |
Compared with MMBZ5222BS and BZX84-C2V4, the HZU22B3JTRF-E provides tighter voltage tolerance (±0.1 V vs. ±0.12 V), lower dynamic resistance (350 Ω vs. 600 Ω), and half the temperature coefficient - making it uniquely suited for 2.2 V low-noise, low-drift reference nodes in space- and performance-constrained designs.
Availability
HZU22B3JTRF-E is available at Aetrix Electronics and suitable for portable medical sensors, industrial RTD signal conditioning, and low-power IoT node voltage reference applications requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.
Supply support for HZU22B3JTRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.
The HZU-LL Series was designed specifically for low-noise, hard-knee Zener reference applications demanding superior voltage stability, ultra-low leakage, and miniature packaging - targeting high-accuracy analog signal chains in space-constrained environments.
FAQ
What is the nominal Zener voltage and test current for HZU22B3JTRF-E?
The HZU22B3JTRF-E has a nominal Zener voltage of 2.2 V, specified at a test current IZ of 0.5 mA. Its guaranteed range is 1.9 V to 2.3 V under those conditions. This value is measured with DC, and the device maintains semi-logarithmic VZ-IZ linearity from 1 nA to 1 mA - making HZU22B3JTRF-E suitable for both precision reference and micropower biasing applications.
Does HZU22B3JTRF-E support operation below 1 µA?
Yes, the HZU22B3JTRF-E exhibits semi-logarithmic VZ-IZ linearity down to 1 nA, confirmed in its electrical characteristics table and Fig.1 of the datasheet. At IZ = 100 nA, VZ remains within specification, enabling use in ultra-low-power wake-up circuits and energy-harvesting systems where HZU22B3JTRF-E serves as a stable reference without compromising battery life.
What is the temperature coefficient of HZU22B3JTRF-E and how does it compare to earlier HZU series?
The HZU22B3JTRF-E has a typical temperature coefficient γZ of −1.0 mV/°C, approximately half that of the standard HZU series. This improvement directly reduces thermal drift in precision analog circuits - for example, over a 50°C span, HZU22B3JTRF-E contributes <±50 mV drift versus >±100 mV for legacy HZU parts, enhancing long-term stability in uncalibrated industrial sensors.
Is HZU22B3JTRF-E RoHS compliant and what is its package marking?
Yes, HZU22B3JTRF-E is RoHS compliant per Renesas' environmental policy and product documentation. Its laser marking is "2B", corresponding to the HZU2BLL variant within the HZU-LL family. The URP (SC-76A) package carries no additional suffix in the marking - "2B" is the sole visible identifier on the top surface of the HZU22B3JTRF-E device.
Can HZU22B3JTRF-E be used in place of standard 2.2 V Zener diodes like BZX55-C2V2?
No - HZU22B3JTRF-E is not a drop-in replacement for BZX55-C2V2 due to fundamental differences in construction, noise performance, and low-current behavior. While both regulate near 2.2 V, the HZU22B3JTRF-E uses epitaxial planar technology for hard-knee, low-noise operation and specified linearity down to 1 nA, whereas BZX55-C2V2 is a general-purpose diffused-junction Zener with higher noise and undefined behavior below 10 µA. System-level validation is required before substituting HZU22B3JTRF-E.
HZU22B3JTRF-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZU22B3JTRF-E FAQ
1.How can I place an order for HZU22B3JTRF-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZU22B3JTRF-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZU22B3JTRF-E reliable?
The price and inventory of HZU22B3JTRF-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZU22B3JTRF-E is usually 5 days.
3.What payment methods are accepted for HZU22B3JTRF-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZU22B3JTRF-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZU22B3JTRF-E?
HZU22B3JTRF-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZU22B3JTRF-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZU22B3JTRF-E?
For technical support, including HZU22B3JTRF-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZU22B3JTRF-E requirements.
6.How does Aetrix verify that HZU22B3JTRF-E is sourced from the original manufacturer or authorized distributors?
All HZU22B3JTRF-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZU22B3JTRF-E meets industry standards.
7.What is the process for return or replacement of HZU22B3JTRF-E?
All HZU22B3JTRF-E units undergo pre-shipment inspection (PSI). If there is an issue with HZU22B3JTRF-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZU22B3JTRF-E part is unused and in its original packaging.
Return procedure for HZU22B3JTRF-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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