Renesas HZU2.2BTRF-E-Q

Overview

HZU2.2BTRF-E-Q from Renesas Electronics is a silicon epitaxial planar Zener diode optimized for hard-knee, low-noise voltage reference applications, with nominal Zener voltage 2.2 V (min 1.9 V, max 2.3 V), dynamic resistance 350 Ω at I_ZT = 0.5 mA, and ultra-low noise voltage (~1/3–1/10 of standard HZU series). It operates in surface-mount URP (Ultra small Resin Package) with cathode/anode terminals and supports precision biasing in analog front-ends.

For engineers reviewing the HZU2.2BTRF-E-Q datasheet, HZU2.2BTRF-E-Q pinout, HZU2.2BTRF-E-Q application, or HZU2.2BTRF-E-Q equivalent, key selection criteria include its hard-knee V_Z-I_Z linearity (1 nA to 1 mA), ±0.2 V Zener tolerance, −1.0 mV/°C temperature coefficient, and suitability for low-power, noise-sensitive voltage references in portable instrumentation and sensor signal conditioning.

Technical Context

The HZU2.2BTRF-E-Q implements a hard-knee Zener breakdown characteristic with semi-logarithmic linear V_Z-I_Z response across 1 nA–1 mA, enabling stable reference generation at microamp-level currents. Its epitaxial planar structure achieves low leakage (<100 nA at V_R = 0.5 V) and tight voltage distribution within ±0.2 V at I_Z = 0.5 mA.

Designed for low-noise operation, the device exhibits approximately one-third the noise voltage of legacy HZU-series diodes and half the temperature coefficient (−1.0 mV/°C vs. −2.0 mV/°C typical for HZU2B), directly supporting high-accuracy DC biasing where thermal drift and broadband noise must be minimized.

Key Specifications

Pinout & Package

Package: Ultra small Resin Package (URP), JEITA code PTSP0002ZA-A, Renesas code SC-76A, mass 0.004 g. Dimensions: A1 = 0.75–1.05 mm, A2 = 0.15–0.45 mm, b = 1.55–1.85 mm, D = 0.80 mm, E = 0.80 mm, e1 = 2.30–2.50 mm, l1 = 1.10–1.40 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener reference applications.

Compared with BZX84-C2V4 and MMSZ4684, the HZU2.2BTRF-E-Q delivers tighter 2.2 V tolerance, lower −1.0 mV/°C TC, and significantly reduced noise-making it uniquely suitable for microamp-biased, temperature-stable reference designs where 2.2 V nominal is specified.

Availability

HZU2.2BTRF-E-Q is available at Aetrix Electronics and suitable for portable sensor signal conditioning, precision ADC reference biasing, and low-power IoT node voltage regulation requiring stable component supply, consistent parametric performance, and RoHS-compliant packaging.

Supply support for HZU2.2BTRF-E-Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog power, and SoC solutions for automotive, industrial, and enterprise applications.

The HZU-LL Series is part of Renesas' precision analog portfolio, engineered specifically for low-noise, hard-knee Zener reference applications demanding tight voltage tolerance, ultra-low drift, and microamp-level operating capability.

FAQ

What is the nominal Zener voltage and tolerance of the HZU2.2BTRF-E-Q?

The HZU2.2BTRF-E-Q has a nominal Zener voltage of 2.2 V, with a guaranteed range of 1.9 V to 2.3 V at test current I_Z = 0.5 mA. This ±0.2 V tolerance supports precise low-voltage reference design without trimming. The device's hard-knee V_Z-I_Z linearity ensures this specification holds across 1 nA–1 mA, making HZU2.2BTRF-E-Q especially reliable in microamp-biased circuits.

Does the HZU2.2BTRF-E-Q have a specified temperature coefficient?

Yes, the HZU2.2BTRF-E-Q has a temperature coefficient of −1.0 mV/°C, approximately half that of the legacy HZU2B series. This value is measured across the 25°C–75°C range and directly improves long-term stability in unregulated ambient environments. For applications requiring minimal thermal drift, the HZU2.2BTRF-E-Q delivers measurable improvement over standard Zeners-confirming its suitability in precision analog blocks where HZU2.2BTRF-E-Q is deployed.

What package type does the HZU2.2BTRF-E-Q use, and what are its key mechanical dimensions?

The HZU2.2BTRF-E-Q uses the Ultra small Resin Package (URP), JEITA code PTSP0002ZA-A, also known as SC-76A. Key dimensions include length 1.10–1.40 mm, width 1.55–1.85 mm, height 0.15–0.45 mm (A2), and terminal pitch 2.30–2.50 mm (e1). Its 0.004 g mass and 2.5 × 1.25 mm max footprint enable high-density placement in space-constrained layouts where HZU2.2BTRF-E-Q integration is critical.

How does the noise performance of the HZU2.2BTRF-E-Q compare to standard Zener diodes?

The HZU2.2BTRF-E-Q exhibits approximately one-third to one-tenth the noise voltage of conventional HZU-series Zeners, due to its optimized epitaxial planar structure and hard-knee breakdown physics. This reduction directly lowers broadband noise injection into sensitive analog nodes-such as op-amp bias inputs or ADC reference dividers-where HZU2.2BTRF-E-Q serves as the primary low-noise reference element.

Is the HZU2.2BTRF-E-Q suitable for microamp-level bias current applications?

Yes, the HZU2.2BTRF-E-Q maintains semi-logarithmic linear V_Z-I_Z behavior from 1 nA to 1 mA, with guaranteed parameters including ≤100 nA reverse current at 0.5 V and stable Zener voltage down to 0.05 mA. This makes HZU2.2BTRF-E-Q ideal for ultra-low-power designs such as coin-cell IoT sensors, where bias currents below 1 µA are common and reference stability must be preserved.