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Renesas HZU2.4B10TRF-E
- Part No.:
- HZU2.4B10TRF-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZU2.4B10TRF-E.pdf
- Description:
- DIODE ZENER
- Quantity:
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Inventory:27,000
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Product details
Overview
HZU2.4B10TRF-E from Renesas Electronics is a silicon epitaxial planar Zener diode optimized for hard-knee, low-noise voltage reference applications, with nominal Zener voltage 2.4 V, dynamic resistance 350 Ω at IZT = 0.5 mA, and ultra-low noise voltage (~1/3 to 1/10 of standard HZU series), housed in an ultra-small resin package (URP, PTSP0002ZA-A) for high-density SMT designs.
For engineers reviewing the HZU2.4B10TRF-E datasheet, HZU2.4B10TRF-E pinout, HZU2.4B10TRF-E application, or HZU2.4B10TRF-E equivalent, key selection criteria include low-noise Zener performance, tight VZ tolerance (1.9–2.3 V), ultra-small URP footprint, temperature coefficient minimization, and suitability for precision analog reference and low-current biasing circuits.
Technical Context
The HZU2.4B10TRF-E employs a silicon epitaxial planar junction structure enabling semi-logarithmic linear VZ–IZ characteristics over an exceptionally wide reverse current range (1 nA to 1 mA). Its hard-knee Zener behavior ensures stable regulation onset without soft turn-on ambiguity.
Designed specifically for low-noise operation, it achieves ~50% lower temperature coefficient than the legacy HZU series and delivers ultra-low voltage noise-critical for high-resolution ADC references, sensor excitation, and metrology-grade analog front-ends where thermal drift and broadband noise directly impact measurement fidelity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 1.9 V min to 2.3 V max at IZ = 0.5 mA - defines usable reference window for precision biasing |
| Dynamic Resistance (ZZT) | 350 Ω typical at IZT = 0.5 mA - determines load regulation sensitivity and AC impedance |
| Reverse Current (IR) | ≤100 nA at VR = 0.5 V - ensures minimal leakage in high-impedance reference nodes |
| Power Dissipation (Pd) | 150 mW maximum at Ta = 25°C - sets absolute DC bias limit for thermal safety |
| Junction Temperature (Tj) | 150°C maximum - constrains ambient operating range and PCB copper pour requirements |
| Temperature Coefficient (γZ) | ≈−0.02 mV/°C (typical) - enables sub-10 ppm/°C stability in compensated references |
Pinout & Package
Package: Ultra Small Resin Package (URP), JEITA code PTSP0002ZA-A, Renesas code SC-76A, mass 0.004 g, surface-mount compatible with 0.8 mm × 1.55 mm footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to regulated output node; polarity mark on package body identifies this terminal |
| 2 | Anode | Connected to ground or current source return; reverse-biased operation requires positive voltage applied to cathode relative to anode |
Key Features
| Feature | Design Value |
|---|---|
| Low-noise voltage reference | ~1/3 to 1/10 noise vs. standard HZU series - reduces RMS error in 24-bit delta-sigma ADC references |
| Hard-knee Zener characteristic | Semi-logarithmic linear VZ–IZ from 1 nA to 1 mA - eliminates ambiguity in regulation threshold for micro-power sensing |
| Ultra-low temperature coefficient | ≈50% lower γZ vs. HZU series - improves long-term stability in unregulated ambient environments |
| Miniature URP package | 0.8 mm × 1.55 mm footprint, SC-76A outline - enables placement in space-constrained analog signal chains |
Applications
| High-Resolution Sensor Excitation | Precision Analog Reference |
|---|---|
Use Scenario: Providing stable excitation voltage to resistive bridge sensors (e.g., strain gauges, RTDs) in portable instrumentation. IC Role / Device Role / Timing Role: Low-noise, low-drift Zener reference supplying bias current to sensor elements. Use Value: Enables <1 µVpp noise floor and <5 ppm/°C total drift in full-scale bridge output, critical for sub-0.01% accuracy measurements. | Use Scenario: Generating reference voltage for 24-bit delta-sigma ADCs in industrial data acquisition modules. IC Role / Device Role / Timing Role: Primary voltage reference source for SAR or sigma-delta converter reference input. Use Value: Delivers <100 nV/√Hz broadband noise and <0.5 mV total VZ variation across −40°C to +85°C, preserving ENOB > 21 bits. |
| Micro-Power Battery Monitoring | Low-Current Biasing Circuit |
Use Scenario: Monitoring Li-ion cell voltage in energy-harvesting wireless sensor nodes with 100 nA standby current budgets. IC Role / Device Role / Timing Role: Zener-based voltage monitor with nanoampere-level reverse leakage. Use Value: Maintains accurate 2.4 V threshold detection while drawing ≤100 nA at 0.5 V reverse bias, extending battery life beyond 10 years. | Use Scenario: Establishing precise bias points for JFET-input op-amps and discrete transconductance stages in audio preamplifiers. IC Role / Device Role / Timing Role: Stable DC bias generator with minimal thermal drift and current noise injection. Use Value: Reduces 1/f noise contribution by >10× versus standard Zeners, preserving SNR > 110 dB in low-frequency audio paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener reference applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor MMBZ5221BS-7-F | VZ = 2.4 V ±5%, ZZT = 25 Ω @ 20 mA - higher test current, higher power rating (200 mW), but 3× higher noise and 2× higher γZ | More suitable for general-purpose regulation at >1 mA; not recommended for sub-µA bias or low-noise metrology | Select HZU2.4B10TRF-E when noise, drift, or micro-power operation dominate; choose MMBZ5221BS-7-F only if higher current drive or cost sensitivity prevails |
| Taiwan Semiconductor TZM2.4-M-TP | VZ = 2.4 V ±5%, ZZT = 400 Ω @ 5 mA - similar noise profile to HZU series but lacks published γZ data and has no verified 1 nA–1 mA linearity spec | Acceptable for basic voltage clamping; insufficiently characterized for precision reference use cases requiring guaranteed low-drift or wide-current-linearity | Use HZU2.4B10TRF-E where datasheet-guaranteed hard-knee behavior, −0.02 mV/°C γZ, and 1 nA–1 mA VZ linearity are mandatory |
Compared with MMBZ5221BS-7-F and TZM2.4-M-TP, the HZU2.4B10TRF-E uniquely guarantees ultra-low noise, sub-0.03 mV/°C temperature coefficient, and semi-logarithmic VZ linearity down to 1 nA-making it the only option qualified for metrology-grade, micro-power, and low-drift analog reference designs.
Availability
HZU2.4B10TRF-E is available at Aetrix Electronics and suitable for high-resolution sensor excitation, precision analog reference, and micro-power battery monitoring requiring stable component supply, consistent parametric performance, and RoHS-compliant packaging.
Supply support for HZU2.4B10TRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog power, and SoC solutions for automotive, industrial, and enterprise systems.
The HZU-LL series was developed specifically to address the growing need for ultra-low-noise, hard-knee Zener references in high-accuracy analog signal conditioning-targeting applications where legacy Zeners introduce unacceptable noise, drift, or nonlinearity.
FAQ
What is the guaranteed Zener voltage range for HZU2.4B10TRF-E at 0.5 mA test current?
The HZU2.4B10TRF-E has a specified Zener voltage range of 1.9 V minimum to 2.3 V maximum when measured at IZ = 0.5 mA. This 0.4 V span reflects the "B" grade tolerance within the HZU2xLL family and is confirmed in the Electrical Characteristics table of Renesas document REJ03G1216-0500 Rev.5.00. The HZU2.4B10TRF-E must be selected with this range in mind for precision reference design margins.
Does HZU2.4B10TRF-E support operation below 1 µA reverse current?
Yes, the HZU2.4B10TRF-E exhibits semi-logarithmic linear VZ–IZ characteristics from IZ = 1 nA up to 1 mA, as explicitly stated in its Features section. This behavior is validated across the full HZU-LL series and enables reliable use in nanoampere-bias applications such as battery voltage monitors and ultra-low-power sensor interfaces-where the HZU2.4B10TRF-E maintains predictable regulation far below conventional Zener operating points.
What is the maximum power dissipation rating for HZU2.4B10TRF-E at room temperature?
The HZU2.4B10TRF-E has an absolute maximum power dissipation (Pd) of 150 mW at ambient temperature Ta = 25°C, per the Absolute Maximum Ratings table in REJ03G1216-0500 Rev.5.00. Derating is required above 25°C, following the curve in Figure 3; at 75°C ambient, Pd drops to approximately 100 mW. This limit directly governs the maximum continuous bias current allowable through the HZU2.4B10TRF-E in thermally constrained layouts.
Is the HZU2.4B10TRF-E RoHS compliant and lead-free?
Yes, the HZU2.4B10TRF-E is RoHS compliant and lead-free. Renesas confirms RoHS compliance for all HZU-LL series devices manufactured after April 2006, and the URP package (PTSP0002ZA-A) uses lead-free solderable terminations. The device carries the "-E" suffix per Renesas ordering conventions indicating lead-free, halogen-free, and RoHS-compliant construction-verified in official Renesas product change notices and packaging specifications.
How does the temperature coefficient of HZU2.4B10TRF-E compare to the standard HZU series?
The HZU2.4B10TRF-E achieves approximately half the temperature coefficient (γZ) of the standard HZU series, with typical values around −0.02 mV/°C (or −0.83 ppm/°C referenced to 2.4 V), as shown in Figure 2 of REJ03G1216-0500 Rev.5.00. This improvement is a core feature of the HZU-LL series and directly enhances long-term stability in unregulated thermal environments-making the HZU2.4B10TRF-E especially valuable in applications where thermal compensation circuitry is impractical.
HZU2.4B10TRF-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZU2.4B10TRF-E FAQ
1.How can I place an order for HZU2.4B10TRF-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZU2.4B10TRF-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZU2.4B10TRF-E reliable?
The price and inventory of HZU2.4B10TRF-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZU2.4B10TRF-E is usually 5 days.
3.What payment methods are accepted for HZU2.4B10TRF-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZU2.4B10TRF-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZU2.4B10TRF-E?
HZU2.4B10TRF-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZU2.4B10TRF-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZU2.4B10TRF-E?
For technical support, including HZU2.4B10TRF-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZU2.4B10TRF-E requirements.
6.How does Aetrix verify that HZU2.4B10TRF-E is sourced from the original manufacturer or authorized distributors?
All HZU2.4B10TRF-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZU2.4B10TRF-E meets industry standards.
7.What is the process for return or replacement of HZU2.4B10TRF-E?
All HZU2.4B10TRF-E units undergo pre-shipment inspection (PSI). If there is an issue with HZU2.4B10TRF-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZU2.4B10TRF-E part is unused and in its original packaging.
Return procedure for HZU2.4B10TRF-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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