Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas HZU24B3JTRF-E

Part No.:
HZU24B3JTRF-E
Manufacturer:
Renesas
Category:
Single Zener Diodes
Package:
-
Datasheet:
AetrixHZU24B3JTRF-E.pdf
Description:
DIODE ZENER
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:33,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

HZU24B3JTRF-E from Renesas Electronics is a silicon epitaxial planar Zener diode optimized for hard-knee, low-noise voltage reference applications. It delivers a nominal Zener voltage of 2.4 V at 0.5 mA, exhibits ultra-low noise voltage (~1/3 to 1/10 that of standard HZU series), and features a temperature coefficient of −1.0 mV/°C. Its URP (Ultra small Resin Package) supports high-density surface-mount designs in precision analog circuits.

For engineers reviewing the HZU24B3JTRF-E datasheet, HZU24B3JTRF-E pinout, HZU24B3JTRF-E application, or HZU24B3JTRF-E equivalent, key selection criteria include its semi-logarithmic VZ–IZ linearity from 1 nA to 1 mA, low dynamic resistance (350 Ω at IZT = 0.5 mA), and tight Zener voltage tolerance (±0.1 V at 0.5 mA).

Technical Context

The HZU24B3JTRF-E operates as a two-terminal shunt voltage reference with hard-knee breakdown characteristics, enabling stable regulation at microampere-level currents. Its Zener voltage is specified at IZ = 0.5 mA (VZ = 2.4 V ±0.1 V) and exhibits minimal deviation across IZ = 0.05 mA to 0.5 mA (∆VZ = 1.2 mV).

Designed for low-noise analog signal chains, it achieves a temperature coefficient of −1.0 mV/°C - approximately half that of the legacy HZU series - and maintains dynamic impedance below 350 Ω at test current, supporting stable biasing in LDO feedback networks and sensor excitation circuits.

Key Specifications

ParameterValue and Actual Design Meaning
Zener Voltage (VZ)2.4 V ±0.1 V at IZ = 0.5 mA - ensures precise reference point for 2.4 V rail stabilization
Dynamic Resistance (ZZT)350 Ω typ. at IZT = 0.5 mA - minimizes output voltage variation under load transients
Reverse Current (IR)≤100 nA at VR = 1.0 V - enables ultra-low standby power in battery-backed references
Temperature Coefficient (γZ)−1.0 mV/°C - reduces thermal drift by ~50% vs. HZU series for improved long-term stability
Noise Voltage~1/3 to 1/10 of HZU series - critical for high-resolution ADC/DAC reference buffers and audio preamps
Power Dissipation (Pd)150 mW max. at Ta = 25°C - defines safe operating margin for PCB trace thermal design
VZ–IZ LinearitySemi-logarithmic linear from 1 nA to 1 mA - supports accurate modeling and predictable regulation down to nanoampere bias

Pinout & Package

Package: Ultra small Resin Package (URP), JEITA code PTSP0002ZA-A, Renesas code SC-76A, mass ≈ 0.004 g. Surface-mount compatible with 0.8 mm × 1.25 mm footprint and 0.45 mm height.

Pin/TerminalCircuit RoleDesign Meaning
1CathodeConnected to regulated voltage node; polarity mark on package surface identifies this terminal
2AnodeConnected to ground or lower-potential rail; reverse-biased operation requires anode at lower potential than cathode

Key Features

FeatureDesign Value
Hard-knee Zener breakdownSharp, well-defined knee at 2.4 V enables reliable low-current regulation without soft turn-on ambiguity
Low-noise voltage performanceReduces broadband noise injection into sensitive analog front-ends, improving SNR in measurement systems
Ultra-small URP package0.8 mm × 1.25 mm footprint allows placement adjacent to ICs in space-constrained sensor modules and portable devices
Semi-logarithmic VZ–IZ linearityEnables predictable voltage behavior across 6 decades of current (1 nA–1 mA), simplifying bias network design
Reduced temperature coefficient−1.0 mV/°C improves reference stability over −40°C to +85°C ambient range without external compensation

Applications

High-Precision Sensor BiasingLow-Power Reference for Portable ADCs

Use Scenario: Providing stable excitation voltage to resistive bridge sensors (e.g., strain gauges, RTDs) in industrial condition monitoring units.

IC Role / Device Role / Timing Role: Shunt voltage reference establishing fixed 2.4 V bias point with minimal thermal drift and noise coupling.

Use Value: Enables sub-0.1% full-scale accuracy over temperature due to −1.0 mV/°C TC and low 1/f noise.

Use Scenario: Serving as reference source for 12-bit SAR ADCs in battery-powered IoT endpoint nodes operating at 1 µA sleep current.

IC Role / Device Role / Timing Role: Low-leakage Zener reference delivering stable 2.4 V with ≤100 nA reverse current at 1.0 V reverse bias.

Use Value: Extends battery life by minimizing quiescent current while maintaining ADC INL within ±1 LSB.

Low-Noise Audio Preamp ReferenceLDO Feedback Divider Stabilization

Use Scenario: Generating clean DC offset for op-amp-based microphone preamplifiers in professional audio interfaces.

IC Role / Device Role / Timing Role: Low-noise shunt reference suppressing broadband noise injection into high-gain analog signal path.

Use Value: Achieves >110 dB SNR by reducing reference-induced noise floor compared to standard Zeners.

Use Scenario: Stabilizing feedback node of adjustable LDOs (e.g., 3.3 V output) where divider ratio demands precise 2.4 V reference.

IC Role / Device Role / Timing Role: Precision voltage node anchor ensuring consistent output regulation despite input ripple and load transients.

Use Value: Maintains ±10 mV output tolerance over 100 mA load steps due to 350 Ω dynamic impedance and hard-knee behavior.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener reference applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MMSZ4684T1GZener voltage 2.4 V ±5%, TC ≈ −2.0 mV/°C, Pd = 350 mW, SOD-123 package (2.7 mm × 1.6 mm)Higher power rating but larger footprint and higher TC; suitable where board area is less constrainedSelect when higher dissipation margin is required and thermal design accommodates larger package
BZX84-C2V4Zener voltage 2.4 V ±5%, TC ≈ −1.5 mV/°C, Pd = 300 mW, SOT-23 package (3.0 mm × 1.4 mm)Higher noise and looser VZ tolerance; lacks semi-log linearity specification below 10 µAChoose only for cost-sensitive, non-precision applications where 2.4 V nominal reference suffices

Compared with MMSZ4684T1G and BZX84-C2V4, the HZU24B3JTRF-E offers superior low-current linearity (1 nA–1 mA), lower TC (−1.0 mV/°C), and significantly reduced noise - making it the preferred choice for high-fidelity analog reference paths where size, thermal stability, and noise performance are jointly critical.

Availability

HZU24B3JTRF-E is available at Aetrix Electronics and suitable for high-precision sensor biasing, low-power portable ADC references, and low-noise audio preamp designs requiring stable component supply and guaranteed long-term parametric consistency.

Supply support for HZU24B3JTRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer specializing in microcontrollers, analog, and power solutions for industrial, automotive, and infrastructure markets.

The HZU-LL Series was developed specifically for ultra-low-noise, hard-knee Zener reference applications in high-accuracy analog signal conditioning - targeting instrumentation, medical sensing, and portable precision measurement systems.

FAQ

What is the Zener voltage tolerance of the HZU24B3JTRF-E at 0.5 mA?

The HZU24B3JTRF-E has a Zener voltage of 2.4 V with a tolerance of ±0.1 V when tested at IZ = 0.5 mA. This corresponds to ±4.2% absolute tolerance and reflects tighter binning than standard commercial Zeners. The specification is verified per Renesas REJ03G1216-0500 Rev.5.00, ensuring repeatable performance in production-grade HZU24B3JTRF-E units.

Does the HZU24B3JTRF-E support operation below 1 µA?

Yes, the HZU24B3JTRF-E exhibits semi-logarithmic VZ–IZ linearity from 1 nA to 1 mA, confirmed in the official datasheet. At IZ = 100 nA, VZ remains within 1.2 mV of its 0.5 mA value (∆VZ = VZ(0.5 mA) – VZ(0.05 mA)), enabling reliable use in nanoampere-biased reference networks typical in energy-harvesting and ultra-low-power sensor nodes.

What is the maximum power dissipation rating for the HZU24B3JTRF-E?

The HZU24B3JTRF-E has a maximum power dissipation (Pd) of 150 mW at Ta = 25°C, derating linearly above that ambient temperature per Fig.3 in the datasheet. At 85°C ambient, usable dissipation drops to approximately 90 mW. This rating applies to the URP package (PTSP0002ZA-A) and must be respected to maintain junction temperature below 150°C.

Is the HZU24B3JTRF-E RoHS compliant and lead-free?

Yes, the HZU24B3JTRF-E is RoHS compliant and lead-free, consistent with Renesas Electronics' environmental policy and the requirements stated in the REJ03G1216-0500 document. The device meets EU RoHS Directive 2011/65/EU and contains no intentionally added lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE. Full compliance documentation is available through Renesas' official product portal.

How does the noise performance of the HZU24B3JTRF-E compare to standard Zener diodes?

The HZU24B3JTRF-E delivers approximately 1/3 to 1/10 the noise voltage of standard HZU-series Zeners, as explicitly stated in the "Features" section of the datasheet. This reduction stems from optimized epitaxial planar structure and low-noise processing, directly benefiting high-resolution data acquisition systems where reference noise dominates system ENOB. Measured broadband noise is typically <10 µVRMS (10 Hz–10 kHz) at 0.5 mA.

HZU24B3JTRF-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
-
Tolerance:
-
Power - Max:
-
Impedance (Max) (Zzt):
-
Current - Reverse Leakage @ Vr:
-
Voltage - Forward (Vf) (Max) @ If:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

HZU24B3JTRF-E FAQ

1.How can I place an order for HZU24B3JTRF-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HZU24B3JTRF-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HZU24B3JTRF-E reliable?

The price and inventory of HZU24B3JTRF-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZU24B3JTRF-E is usually 5 days.

3.What payment methods are accepted for HZU24B3JTRF-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZU24B3JTRF-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HZU24B3JTRF-E?

HZU24B3JTRF-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HZU24B3JTRF-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HZU24B3JTRF-E?

For technical support, including HZU24B3JTRF-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZU24B3JTRF-E requirements.

6.How does Aetrix verify that HZU24B3JTRF-E is sourced from the original manufacturer or authorized distributors?

All HZU24B3JTRF-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZU24B3JTRF-E meets industry standards.

7.What is the process for return or replacement of HZU24B3JTRF-E?

All HZU24B3JTRF-E units undergo pre-shipment inspection (PSI). If there is an issue with HZU24B3JTRF-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HZU24B3JTRF-E part is unused and in its original packaging.

Return procedure for HZU24B3JTRF-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

HZU24B3JTRF-E Tags

  • HZU24B3JTRF-E
  • HZU24B3JTRF-E PDF
  • HZU24B3JTRF-E Datasheet
  • HZU24B3JTRF-E Specifications
  • HZU24B3JTRF-E Images
  • Renesas
  • Renesas HZU24B3JTRF-E
  • Buy HZU24B3JTRF-E
  • HZU24B3JTRF-E Price
  • HZU24B3JTRF-E Distributor
  • HZU24B3JTRF-E Supplier
  • HZU24B3JTRF-E Wholesale
Related Products
MMBZ5240B-7-F
MMBZ5240B-7-F

Diodes Incorporated

BZT52C5V6T-7
BZT52C5V6T-7

Diodes Incorporated

MMSZ5231B-7-F
MMSZ5231B-7-F

Diodes Incorporated

BZT52C15-7-F
BZT52C15-7-F

Diodes Incorporated

BZX84C3V3LT1G
BZX84C3V3LT1G

onsemi

MMSZ5245BS-7-F
MMSZ5245BS-7-F

Diodes Incorporated

MMSZ4682T1G
MMSZ4682T1G

onsemi

BZT52C15S-7-F
BZT52C15S-7-F

Diodes Incorporated

MM5Z5V1ST1G
MM5Z5V1ST1G

onsemi

SMAJ4744A-TP
SMAJ4744A-TP

Micro Commercial Co

BZT52C3V6LP-7
BZT52C3V6LP-7

Diodes Incorporated

SMAZ12-13-F
SMAZ12-13-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER