Renesas HZU27B-JTRF-E

Overview

HZU27B-JTRF-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits, featuring a nominal Zener voltage of 27 V (min 25.1 V, max 28.9 V at 2 mA), 200 mW power dissipation, and 70 Ω dynamic resistance at 2 mA test current.

For engineers reviewing the HZU27B-JTRF-E datasheet, HZU27B-JTRF-E pinout, HZU27B-JTRF-E application, or HZU27B-JTRF-E equivalent, this device serves as a surface-mount voltage reference in power supply feedback loops, sensor biasing networks, and overvoltage protection clamping stages where tight tolerance and thermal stability are required.

Technical Context

The HZU27B-JTRF-E operates as a two-terminal shunt regulator with reverse-biased junction behavior, optimized for stable DC voltage reference generation under low-current conditions (IZ = 2 mA). Its Zener voltage exhibits a positive temperature coefficient near +0.04 %/°C at 27 V, minimizing drift across ambient temperatures up to +150 °C junction temperature.

Designed for surface-mount assembly, it uses ultra-small resin package (URP, JEITA code SC-76A) with cathode-anode polarity marked on body. The device complies with RoHS and is rated for storage from –55 °C to +150 °C, supporting industrial-grade reliability without derating below 25 °C ambient.

Key Specifications

Pinout & Package

Ultra-small Resin Package (URP), JEITA code SC-76A, dimensions 1.5 mm × 0.8 mm × 0.9 mm (L × W × H), mass 0.004 g, tape-and-reel packaging (3,000 pcs/reel, TRF taping).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with BZX84-C27LT1G and MMSZ5256ET1G, the HZU27B-JTRF-E offers superior voltage tolerance (±1.9 V vs. ±5%), smaller URP footprint (1.5 × 0.8 mm vs. 2.9 × 1.3 mm), and lower dynamic resistance-making it optimal for compact, high-accuracy analog references where space and stability are prioritized over raw power handling.

Availability

HZU27B-JTRF-E is available at Aetrix Electronics and suitable for power supply feedback reference, sensor biasing network, and overvoltage clamp protection requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for HZU27B-JTRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog, and power devices for industrial, automotive, and infrastructure markets.

The HZU Series belongs to Renesas' discrete Zener diode product line, engineered specifically for compact, high-stability voltage reference and clamping functions in space-constrained, thermally demanding applications.

FAQ

What is the Zener voltage tolerance of HZU27B-JTRF-E?

The HZU27B-JTRF-E has a Zener voltage range of 25.1 V to 28.9 V at 2 mA test current, corresponding to a ±1.9 V absolute tolerance around the nominal 27 V rating. This grade-B specification ensures predictable regulation behavior in feedback and protection circuits without requiring post-manufacture sorting or calibration. The HZU27B-JTRF-E maintains this tolerance across its qualified operating temperature range.

Does HZU27B-JTRF-E support lead-free reflow soldering?

Yes, the HZU27B-JTRF-E is RoHS-compliant and qualified for standard lead-free reflow profiles per J-STD-020, including peak temperatures up to 260 °C. Its URP package construction and internal metallization are designed to withstand multiple thermal cycles without delamination or parameter shift. The HZU27B-JTRF-E must be stored per moisture sensitivity level (MSL) 1 guidelines prior to assembly.

What is the maximum reverse leakage current for HZU27B-JTRF-E?

The HZU27B-JTRF-E specifies a maximum reverse leakage current (I_R) of 2 μA at V_R = 21 V and T_a = 25 °C. This low leakage supports high-impedance applications such as precision biasing and low-power reset detection. At elevated temperatures, leakage increases predictably per semiconductor physics but remains within design margins up to T_j = 150 °C. The HZU27B-JTRF-E datasheet confirms this value in the Electrical Characteristics table on page 2.

Can HZU27B-JTRF-E replace older through-hole Zener diodes like 1N4733A?

The HZU27B-JTRF-E provides equivalent 27 V regulation but is not a direct mechanical or electrical drop-in replacement for 1N4733A due to differences in package (URP vs. DO-41), thermal resistance, and test conditions (2 mA vs. 12.5 mA). While functionally comparable in voltage stabilization role, PCB layout and thermal design must be revised to accommodate the HZU27B-JTRF-E's surface-mount URP footprint and lower power rating. The HZU27B-JTRF-E is intended for new designs prioritizing miniaturization and modern assembly processes.

What is the temperature coefficient of HZU27B-JTRF-E?

The HZU27B-JTRF-E exhibits a Zener voltage temperature coefficient (γ_Z) of approximately +0.04 %/°C at 27 V, as shown in Figure 2 of the datasheet. This positive, low-drift characteristic minimizes output voltage variation across industrial temperature ranges (–40 °C to +85 °C ambient), making the HZU27B-JTRF-E suitable for stable reference applications where thermal compensation is impractical. The HZU27B-JTRF-E achieves this via optimized silicon doping and planar junction geometry.