Renesas HZU27BTRF-E

Overview

HZU27BTRF-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits, featuring a nominal Zener voltage of 27 V (min 25.1 V, max 28.9 V at 2 mA), 200 mW power dissipation, and ultra-small URP (SC-76A) surface-mount package. It serves as a stable shunt reference in power supply feedback loops, sensor biasing networks, and overvoltage protection clamps.

For engineers reviewing the HZU27BTRF-E datasheet, HZU27BTRF-E pinout, HZU27BTRF-E application, or HZU27BTRF-E equivalent, key selection criteria include its ±7% Zener voltage tolerance at 2 mA, 70 Ω dynamic resistance, –55°C to +150°C storage temperature range, and compatibility with automated SMT assembly due to TRF taping (3,000 pcs/reel).

Technical Context

This device operates as a two-terminal shunt regulator, maintaining a stable reverse-biased breakdown voltage across its anode–cathode terminals under controlled test current (IZ = 2 mA). Its planar junction construction ensures consistent voltage regulation and low temperature coefficient drift, especially critical in battery-powered instrumentation and industrial sensor front-ends.

The HZU27BTRF-E is rated for 200 mW maximum power dissipation at 25°C ambient, derating linearly above 25°C per Fig. 3 in the datasheet, and supports operation up to 150°C junction temperature. Its URP package enables high-density PCB layouts while maintaining thermal performance suitable for compact consumer and industrial control modules.

Key Specifications

Pinout & Package

URP (Ultra Small Resin Package, JEITA code SC-76A) is a 2-pin surface-mount package with cathode marking on the top surface. Dimensions: 1.55 mm (L) × 0.80 mm (W) × 0.45 mm (H); typical mass 0.004 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with BZX84-C27LT1G and MMSZ5256ET1G, the HZU27BTRF-E offers the smallest footprint (URP/SC-76A) and tightest integration into ultra-compact designs, though with lower absolute power rating-making it optimal for space-limited, low-current reference and clamp roles rather than high-energy transient suppression.

Availability

HZU27BTRF-E is available at Aetrix Electronics and suitable for industrial sensor interfaces, portable medical monitors, and automotive body-control modules requiring stable component supply with full traceability and no obsolescence risk through 2028.

Supply support for HZU27BTRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and timing solutions for industrial, automotive, and enterprise systems.

The HZU Series is part of Renesas' discrete voltage reference portfolio, engineered specifically for high-accuracy, low-power shunt regulation in miniaturized electronic systems where size, stability, and manufacturability are critical.

FAQ

What is the Zener voltage tolerance of HZU27BTRF-E at 2 mA test current?

The HZU27BTRF-E has a Zener voltage range of 25.1 V to 28.9 V at I_Z = 2 mA, corresponding to ±7% tolerance around the nominal 27 V rating. This specification is verified per the R07DS0423EJ1000 datasheet, page 3, and applies strictly under pulsed test conditions (PW = 40 ms) at T_a = 25°C. The HZU27BTRF-E maintains this tolerance across its qualified operating temperature range when used within derated power limits.

Can HZU27BTRF-E be used in place of a 27 V Zener diode in a 0603 footprint design?

Yes-the HZU27BTRF-E uses the URP (SC-76A) package measuring 1.55 mm × 0.80 mm, which is dimensionally compatible with standard 0603 land patterns (1.6 mm × 0.8 mm). Its cathode/anode pinout matches typical 0603 Zener orientation, and the device is delivered in TRF tape for direct SMT placement. However, verify thermal relief and solder mask clearance per IPC-7351B since URP has slightly shorter length than generic 0603 components.

What is the maximum reverse leakage current for HZU27BTRF-E at 21 V?

The maximum reverse leakage current (I_R) for HZU27BTRF-E is 2 μA at V_R = 21 V and T_a = 25°C, as specified on page 3 of the R07DS0423EJ1000 datasheet. This low leakage supports high-impedance bias networks and battery-critical applications. Leakage increases with temperature but remains below 10 μA up to 85°C ambient when operated within power derating limits.

Does HZU27BTRF-E have a specified temperature coefficient?

Yes-the HZU27BTRF-E exhibits a Zener voltage temperature coefficient (γ_Z) of approximately –0.04 %/°C (or –10.8 mV/°C) near 27 V, derived from Figure 2 on page 5 of the R07DS0423EJ1000 datasheet. This negative coefficient means its regulated voltage decreases slightly with rising temperature, a characteristic inherent to mid-voltage Zener devices and accounted for in precision reference designs using the HZU27BTRF-E.

Is HZU27BTRF-E RoHS compliant and halogen-free?

Yes-HZU27BTRF-E complies with EU RoHS Directive 2011/65/EU and is halogen-free per Renesas' material declarations. The device contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE), and bromine/chlorine content is below 900 ppm each. Full compliance documentation is available via Renesas' Quality & Reliability portal using the HZU27BTRF-E part number.