Renesas HZU3.0B1JTRF-E
- Part No.:
- HZU3.0B1JTRF-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZU3.0B1JTRF-E.pdf
- Description:
- DIODE ZENER
- Quantity:
- Payment:

- Shipping:

Inventory:39,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
HZU3.0B1JTRF-E from Renesas Electronics is a silicon epitaxial planar Zener diode optimized for hard-knee, low-noise voltage reference applications. It delivers a nominal Zener voltage of 3.0 V (2.8–3.2 V), exhibits ultra-low noise voltage (~1/3–1/10 that of standard HZU series), and features a temperature coefficient of −1.0 mV/°C (typical) - approximately half that of the legacy HZU series. Its semi-logarithmic linear VZ–IZ characteristic from 1 nA to 1 mA supports precision biasing in low-current analog circuits.
For engineers reviewing the HZU3.0B1JTRF-E datasheet, HZU3.0B1JTRF-E pinout, HZU3.0B1JTRF-E application, or HZU3.0B1JTRF-E equivalent, key selection criteria include its 3.0 V Zener voltage tolerance, ultra-low noise performance, low-temperature-coefficient stability, URP surface-mount package compatibility, and suitability for low-power reference design in instrumentation and sensor signal conditioning.
Technical Context
The HZU3.0B1JTRF-E operates as a two-terminal, passive voltage reference device with a hard-knee Zener breakdown mechanism enabled by silicon epitaxial planar construction. Its VZ–IZ curve maintains semi-logarithmic linearity over six decades (1 nA to 1 mA), enabling stable regulation even at microamp-level bias currents.
It achieves low-noise operation through optimized epitaxial layer doping and junction geometry, reducing flicker and thermal noise components. The temperature coefficient is minimized via intrinsic material properties and process tuning - not external compensation - resulting in a typical γZ of −1.0 mV/°C, verified across the 25°C to 85°C ambient range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 2.8 V min / 3.2 V max at IZ = 0.5 mA - defines tight 3.0 V nominal reference with ±0.2 V tolerance for high-accuracy biasing |
| Noise Voltage | ~1/3 to 1/10 lower than HZU series - enables use in ultra-low-noise amplifiers and precision ADC references |
| Temp. Coefficient (γZ) | −1.0 mV/°C typ - provides improved thermal stability vs. legacy HZU (−2.0 mV/°C typ), reducing drift in wide-temperature environments |
| Dynamic Resistance (ZZT) | 360 Ω typ at IZT = 0.5 mA - ensures minimal output impedance variation under load changes |
| Reverse Current (IR) | ≤100 nA at VR = 1.0 V - guarantees negligible leakage in high-impedance reference nodes |
| Power Dissipation (Pd) | 150 mW max at Ta = 25°C - supports operation in compact SMT layouts without forced cooling |
Pinout & Package
Package: Ultra Small Resin Package (URP), JEITA code PTSP0002ZA-A, Renesas code SC-76A, mass 0.004 g. Surface-mount compatible with 0.8 mm × 1.55 mm footprint and 0.45 mm max height.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to higher-potential node; reverse-biased terminal where Zener breakdown occurs |
| 2 | Anode | Connected to lower-potential node (typically ground or common return); completes bias path |
Key Features
| Feature | Design Value |
|---|---|
| Hard-knee Zener characteristic | Sharp, well-defined breakdown onset at ~3.0 V enables precise threshold detection without soft turn-on ambiguity |
| Ultra-low noise voltage | Reduces RMS noise contribution in reference paths - critical for sub-16-bit ADCs and low-noise op-amp biasing |
| Semi-logarithmic VZ–IZ linearity | Maintains stable voltage over 1 nA–1 mA current range, supporting wide dynamic range in battery-powered sensors |
| Low temperature coefficient | −1.0 mV/°C typ minimizes drift-induced error in industrial temperature ranges (−40°C to +85°C) |
Applications
| High-Precision Sensor Biasing | Low-Noise Instrumentation Amplifier Reference |
|---|---|
Use Scenario: Providing stable excitation voltage to bridge-based pressure or strain sensors in portable medical monitors. IC Role / Device Role / Timing Role: Passive Zener reference source establishing fixed bias point for Wheatstone bridge output offset calibration. Use Value: Enables <10 ppm/°C system-level offset drift due to its −1.0 mV/°C tempco and low 100 nA leakage at 1 V reverse bias. | Use Scenario: Supplying reference voltage to the gain-setting network of a low-noise, rail-to-rail instrumentation amplifier in EEG front-ends. IC Role / Device Role / Timing Role: Low-noise DC reference node decoupling amplifier input stage from supply ripple and digital noise coupling. Use Value: Reduces integrated noise floor by up to 10× vs. standard Zeners, preserving >14-bit ENOB in 1 kHz bandwidth measurements. |
| Portable Battery-Voltage Monitor | Microamp-Level Power-On Reset Circuit |
Use Scenario: Generating a stable 3.0 V threshold for brown-out detection in coin-cell–powered IoT endpoint nodes. IC Role / Device Role / Timing Role: Zener-based comparator reference enabling accurate undervoltage lockout at 3.0 V ±2% across −20°C to +70°C. Use Value: Maintains ±0.06 V accuracy over temperature due to hard-knee behavior and low tempco - no trimming required. | Use Scenario: Setting reset threshold in ultra-low-power microcontroller supervisory circuits drawing <1 µA quiescent current. IC Role / Device Role / Timing Role: Passive voltage reference defining POR trip point in discrete RC-reset networks with nanoscale leakage control. Use Value: Supports reliable reset assertion down to 1 nA bias current thanks to semi-log VZ–IZ linearity and <100 nA IR. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener reference applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TL431ACDBVR | Adjustable shunt regulator (2.5 V ref), requires external resistors; higher IKA (1 mA min), higher noise density (15 µV/√Hz) | Used where programmable reference or higher current sinking (>1 mA) is needed; unsuitable for sub-100 nA bias designs | Select HZU3.0B1JTRF-E when fixed 3.0 V, ultra-low-noise, and nanoamp-level operation are mandatory |
| BZX84-C3V0LT1G | Standard Zener (3.0 V), higher tempco (−2.5 mV/°C), higher noise, no hard-knee specification, 350 Ω ZZT | Acceptable for general-purpose voltage clamping but lacks precision linearity and low-drift stability for metrology-grade references | Choose HZU3.0B1JTRF-E for applications requiring guaranteed semi-log VZ–IZ behavior and <1.0 mV/°C tempco |
Compared with TL431ACDBVR and BZX84-C3V0LT1G, the HZU3.0B1JTRF-E offers superior thermal stability, lower noise, and verified hard-knee linearity - making it uniquely suited for nanoamp-biased, high-accuracy analog references where passive simplicity and drift-critical performance are non-negotiable.
Availability
HZU3.0B1JTRF-E is available at Aetrix Electronics and suitable for high-precision sensor biasing, low-noise instrumentation amplifier reference, and microamp-level power-on reset circuits requiring stable component supply across industrial and medical OEM programs.
Supply support for HZU3.0B1JTRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor manufacturer specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.
The HZU-LL Series was designed specifically for ultra-low-noise, hard-knee Zener reference applications in space-constrained, low-power analog systems - emphasizing precision, thermal stability, and nanoamp-level operational integrity.
FAQ
What is the nominal Zener voltage of the HZU3.0B1JTRF-E and how tightly is it specified?
The HZU3.0B1JTRF-E has a nominal Zener voltage of 3.0 V, with a guaranteed range of 2.8 V to 3.2 V at IZ = 0.5 mA. This ±0.2 V tolerance (±6.7%) reflects its hard-knee design and is tighter than many general-purpose Zeners in the same voltage class. The specification is validated per Renesas REJ03G1216-0500 Rev.5.00 test conditions and applies directly to the HZU3.0B1JTRF-E device.
Does the HZU3.0B1JTRF-E require external biasing components to function as a voltage reference?
No, the HZU3.0B1JTRF-E is a two-terminal passive Zener diode and requires only a series current-limiting resistor to operate. It does not need external op-amps, capacitors, or feedback networks. Its semi-logarithmic VZ–IZ linearity from 1 nA to 1 mA allows direct integration into ultra-low-current reference nodes - a key feature confirmed for the HZU3.0B1JTRF-E in the official Renesas datasheet.
How does the temperature coefficient of the HZU3.0B1JTRF-E compare to standard Zener diodes?
The HZU3.0B1JTRF-E exhibits a typical temperature coefficient of −1.0 mV/°C, approximately half that of conventional Zeners like the HZU series (−2.0 mV/°C typ) and significantly better than BZX84-C3V0LT1G (−2.5 mV/°C). This value is measured and specified for the HZU3.0B1JTRF-E across 25°C to 85°C and contributes directly to its suitability in thermally varying environments without additional compensation.
Is the HZU3.0B1JTRF-E RoHS compliant and what is its packaging format?
Yes, the HZU3.0B1JTRF-E is RoHS compliant and supplied in tape-and-reel format per JEDEC standard. Its package is the Ultra Small Resin Package (URP), designated PTSP0002ZA-A (JEITA) and SC-76A (Renesas), with dimensions of 0.8 mm × 1.55 mm × 0.45 mm max. This information is explicitly documented for the HZU3.0B1JTRF-E in Renesas' official package drawings and compliance statements.
Can the HZU3.0B1JTRF-E be used in place of the older HZU3BLL variant?
Yes - the HZU3.0B1JTRF-E is the modern, industry-standard marking for the HZU3BLL device, sharing identical electrical characteristics, package, and performance. The "1JTRF-E" suffix denotes tape-and-reel packaging and RoHS compliance per Renesas' updated ordering nomenclature. All specifications in REJ03G1216-0500 Rev.5.00 apply equivalently to the HZU3.0B1JTRF-E as a direct replacement for HZU3BLL.
HZU3.0B1JTRF-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZU3.0B1JTRF-E FAQ
1.How can I place an order for HZU3.0B1JTRF-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZU3.0B1JTRF-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZU3.0B1JTRF-E reliable?
The price and inventory of HZU3.0B1JTRF-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZU3.0B1JTRF-E is usually 5 days.
3.What payment methods are accepted for HZU3.0B1JTRF-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZU3.0B1JTRF-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZU3.0B1JTRF-E?
HZU3.0B1JTRF-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZU3.0B1JTRF-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZU3.0B1JTRF-E?
For technical support, including HZU3.0B1JTRF-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZU3.0B1JTRF-E requirements.
6.How does Aetrix verify that HZU3.0B1JTRF-E is sourced from the original manufacturer or authorized distributors?
All HZU3.0B1JTRF-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZU3.0B1JTRF-E meets industry standards.
7.What is the process for return or replacement of HZU3.0B1JTRF-E?
All HZU3.0B1JTRF-E units undergo pre-shipment inspection (PSI). If there is an issue with HZU3.0B1JTRF-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZU3.0B1JTRF-E part is unused and in its original packaging.
Return procedure for HZU3.0B1JTRF-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZU3.0B1JTRF-E Tags

-
MMBZ5240B-7-F
Diodes Incorporated

-
BZT52C5V6T-7
Diodes Incorporated

-
MMSZ5231B-7-F
Diodes Incorporated

-
BZT52C15-7-F
Diodes Incorporated

-
BZX84C3V3LT1G
onsemi

-
MMSZ5245BS-7-F
Diodes Incorporated

-
MMSZ4682T1G
onsemi

-
BZT52C15S-7-F
Diodes Incorporated

-
MM5Z5V1ST1G
onsemi

-
SMAJ4744A-TP
Micro Commercial Co

-
BZT52C3V6LP-7
Diodes Incorporated

-
SMAZ12-13-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

