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Renesas HZU3.0B1TRF-E
- Part No.:
- HZU3.0B1TRF-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZU3.0B1TRF-E.pdf
- Description:
- DIODE ZENER
- Quantity:
- Payment:
- Shipping:
Inventory:78,000
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Product details
Overview
HZU3.0B1TRF-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage stabilization in low-power analog and digital supply rails, featuring a nominal Zener voltage of 3.10 V to 3.35 V at 5 mA test current, 200 mW power dissipation, and ultra-small URP (SC-76A) surface-mount package. It serves as a reference voltage source in sensor signal conditioning, microcontroller reset circuits, and portable battery-powered instrumentation.
For engineers reviewing the HZU3.0B1TRF-E datasheet, HZU3.0B1TRF-E pinout, HZU3.0B1TRF-E application, or HZU3.0B1TRF-E equivalent, key selection criteria include verified Zener voltage tolerance (±3.5% at 3.225 V nominal), dynamic resistance (≤120 Ω), reverse leakage (<1.0 μA at 1.0 V), junction temperature limit (150°C), and tape-and-reel packaging compatibility with automated SMT assembly.
Technical Context
The HZU3.0B1TRF-E employs a silicon planar Zener structure optimized for stable breakdown in the 3.0–3.4 V range, with graded doping to minimize temperature coefficient drift. Its electrical behavior is characterized under pulsed conditions (PW = 40 ms) to avoid thermal runaway during testing.
Designed for surface-mount use in space-constrained PCB layouts, it operates within –55°C to +150°C storage and ambient ranges, and exhibits a negative temperature coefficient typical of low-voltage Zeners - approximately –0.04 %/°C near 3.2 V, per Figure 2 of the datasheet.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 3.10 V to 3.35 V at IZ = 5 mA - defines tight regulation window for 3.3 V system references |
| Power Dissipation (Pd) | 200 mW at Ta = 25°C - supports continuous operation in compact, unheatsinked layouts |
| Dynamic Resistance (rd) | ≤120 Ω at IZ = 5 mA - ensures minimal output impedance for stable voltage reference performance |
| Reverse Leakage Current (IR) | ≤1.0 μA at VR = 1.0 V - enables low-quiescent-current biasing in battery-sensitive designs |
| Junction Temperature (Tj) | 150°C maximum - allows reliable operation in thermally demanding industrial environments |
| Package | URP (SC-76A), 0.8 mm × 0.8 mm footprint - compatible with 0402-class pick-and-place and reflow profiles |
Pinout & Package
Ultra-small Resin Package (URP / SC-76A) - 2-terminal surface-mount device with cathode-marked top-side marking and 0.004 g typical mass. Dimensions: 0.80 mm (L) × 0.80 mm (W) × 0.45 mm (H) max.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to regulated output node; polarity must be observed for proper reverse-bias operation |
| 2 | Anode | Connected to ground or lower-potential rail; completes Zener conduction path during regulation |
Key Features
| Feature | Design Value |
|---|---|
| Taped delivery (TRF) | 3,000 pcs/reel - supports high-speed automated placement without manual handling or static risk |
| Ultra-small URP package | 0.8 mm × 0.8 mm footprint - reduces PCB area by >50% vs. SOD-323 while maintaining thermal robustness |
| Grade B1 Zener tolerance | ±3.5% at 3.225 V nominal - eliminates need for post-production trimming in cost-sensitive consumer applications |
| Pulsed-test validated specs | Parameters measured at PW = 40 ms - ensures published rd and VZ reflect real-world transient stability |
Applications
| Microcontroller Reset Circuit | Sensor Signal Conditioning |
|---|---|
Use Scenario: Generating a clean, temperature-stable 3.3 V reset threshold for ARM Cortex-M0+ MCUs in industrial gateways. IC Role / Device Role / Timing Role: Zener diode acting as precision voltage reference for external reset supervisor IC or comparator input. Use Value: Ensures deterministic reset assertion across –40°C to +85°C ambient, leveraging ≤120 Ω dynamic resistance to reject supply ripple. |
Use Scenario: Biasing bridge-based pressure sensors in handheld medical diagnostics equipment. IC Role / Device Role / Timing Role: Provides stable excitation reference for Wheatstone bridge, replacing larger TL431-based solutions. Use Value: Delivers <1.0 μA leakage at 1.0 V reverse bias, minimizing offset error in high-impedance sensor front-ends. |
| Portable Battery Monitor | USB-C Power Negotiation Reference |
Use Scenario: Supplying reference voltage to ADC inputs monitoring Li-ion cell voltage in wearables. IC Role / Device Role / Timing Role: Low-power Zener shunt regulator establishing 3.225 V reference for 12-bit SAR ADC. Use Value: Maintains ±3.5% VZ tolerance over full battery discharge (2.8 V–4.2 V), enabling accurate state-of-charge estimation. |
Use Scenario: Providing stable 3.3 V reference for USB PD CC logic detection circuitry in compact chargers. IC Role / Device Role / Timing Role: Voltage clamp defining logic-high threshold for CC line state interpretation. Use Value: Guarantees fast, repeatable CC line detection due to sub-100 ns response time inherent to planar Zener structure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener diode voltage reference applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BZX384-B3V3,115 (Nexperia) | Zener voltage 3.3 V ±5%, Pd = 300 mW, SOD-323 package (1.3 mm × 0.8 mm) | Wider VZ tolerance and larger footprint - less suitable for ultra-dense 0402-equivalent layouts | Select when higher power margin is required and board space permits larger package |
| MMSZ4685T1G (onsemi) | Zener voltage 3.3 V ±5%, Pd = 500 mW, SOD-123 package (2.9 mm × 1.3 mm) | Higher power rating but 4.5× larger footprint - incompatible with fine-pitch automated placement | Prefer for prototyping or high-reliability legacy designs where thermal derating dominates size constraints |
Compared with BZX384-B3V3,115 and MMSZ4685T1G, the HZU3.0B1TRF-E offers tighter voltage tolerance in a significantly smaller URP package, making it optimal for miniaturized, production-scale SMT designs where reference accuracy and board area are jointly constrained.
Availability
HZU3.0B1TRF-E is available at Aetrix Electronics and suitable for microcontroller reset circuits, sensor signal conditioning, portable battery monitoring, USB-C power negotiation reference, and industrial voltage reference applications requiring stable component supply and RoHS-compliant sourcing.
Supply support for HZU3.0B1TRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog power, and timing solutions for automotive, industrial, and IoT systems, with emphasis on reliability, integration, and long-term product support.
The HZU Series belongs to Renesas' discrete Zener diode portfolio, engineered specifically for high-accuracy, low-power voltage stabilization in space-constrained surface-mount applications - targeting cost-sensitive yet thermally demanding consumer and industrial electronics.
FAQ
What is the exact Zener voltage range for HZU3.0B1TRF-E?
The HZU3.0B1TRF-E has a guaranteed Zener voltage range of 3.10 V to 3.35 V when tested at IZ = 5 mA and Ta = 25°C. This corresponds to a nominal value of 3.225 V with ±3.5% tolerance, as defined by Grade B1 in the Renesas HZU Series datasheet R07DS0423EJ1000.
Is HZU3.0B1TRF-E suitable for automotive applications?
The HZU3.0B1TRF-E is rated for Standard quality grade per Renesas documentation, intended for computers, office equipment, communications devices, and industrial robots - not for automotive or safety-critical systems. For AEC-Q200 qualified alternatives, consult Renesas' automotive-grade Zener portfolio separately.
What is the thermal derating behavior of HZU3.0B1TRF-E above 25°C?
HZU3.0B1TRF-E follows the power dissipation vs. ambient temperature curve in Figure 3 of its datasheet: Pd linearly decreases from 200 mW at 25°C to zero at 150°C. At 85°C ambient, usable power drops to approximately 120 mW, requiring appropriate current limiting in sustained operation.
Does HZU3.0B1TRF-E have a specified temperature coefficient?
Yes - the HZU3.0B1TRF-E exhibits a negative temperature coefficient near –0.04 %/°C (or ~–1.3 mV/°C) at 3.2 V, as shown in Figure 2 of the datasheet. This value is typical and supports predictable drift compensation in precision reference designs.
What does the "TRF" suffix indicate in HZU3.0B1TRF-E?
The "TRF" suffix denotes tape-and-reel packaging per Renesas ordering convention: 3,000 units per reel, using STSP0002ZA-A carrier tape format. This configuration is optimized for high-volume SMT assembly and ensures ESD-safe, machine-readable handling of the URP package.
HZU3.0B1TRF-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZU3.0B1TRF-E FAQ
1.How can I place an order for HZU3.0B1TRF-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZU3.0B1TRF-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZU3.0B1TRF-E reliable?
The price and inventory of HZU3.0B1TRF-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZU3.0B1TRF-E is usually 5 days.
3.What payment methods are accepted for HZU3.0B1TRF-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZU3.0B1TRF-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZU3.0B1TRF-E?
HZU3.0B1TRF-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZU3.0B1TRF-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZU3.0B1TRF-E?
For technical support, including HZU3.0B1TRF-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZU3.0B1TRF-E requirements.
6.How does Aetrix verify that HZU3.0B1TRF-E is sourced from the original manufacturer or authorized distributors?
All HZU3.0B1TRF-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZU3.0B1TRF-E meets industry standards.
7.What is the process for return or replacement of HZU3.0B1TRF-E?
All HZU3.0B1TRF-E units undergo pre-shipment inspection (PSI). If there is an issue with HZU3.0B1TRF-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZU3.0B1TRF-E part is unused and in its original packaging.
Return procedure for HZU3.0B1TRF-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZU3.0B1TRF-E Tags
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MMBZ5240B-7-F
Diodes Incorporated
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BZT52C5V6T-7
Diodes Incorporated
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MMSZ5231B-7-F
Diodes Incorporated
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BZT52C15-7-F
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BZX84C3V3LT1G
onsemi
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MMSZ5245BS-7-F
Diodes Incorporated
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MMSZ4682T1G
onsemi
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BZT52C15S-7-F
Diodes Incorporated
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MM5Z5V1ST1G
onsemi
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SMAJ4744A-TP
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BZT52C3V6LP-7
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SMAZ12-13-F
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