Renesas HZU3.6B1TRF-E

Overview

HZU3.6B1TRF-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage stabilization in low-power analog and reference circuits, with a nominal Zener voltage of 3.6 V (min 3.70 V, max 3.97 V at I_Z = 5 mA), dynamic resistance of 130 Ω, and power dissipation rating of 200 mW in an ultra-small URP (SC-76A) surface-mount package.

For engineers reviewing the HZU3.6B1TRF-E datasheet, HZU3.6B1TRF-E pinout, HZU3.6B1TRF-E application, or HZU3.6B1TRF-E equivalent, key selection considerations include its B1-grade voltage tolerance (±3.5% at 3.6 V), low reverse leakage (<10 µA at V_R = 1.0 V), junction temperature limit of 150°C, and suitability for space-constrained biasing and regulation in portable instrumentation and sensor signal conditioning.

Technical Context

The HZU3.6B1TRF-E operates as a two-terminal shunt regulator, maintaining stable output voltage across variable load and input conditions by conducting reverse current above its specified Zener breakdown threshold. Its silicon planar construction ensures consistent breakdown characteristics and thermal stability.

Designed for DC voltage reference and overvoltage protection, it exhibits a negative temperature coefficient of approximately –0.04 %/°C (–40 mV/°C) near 3.6 V, enabling predictable drift compensation in temperature-sensitive designs. The device is rated for continuous operation up to 150°C junction temperature and supports pulsed testing per PW = 40 ms.

Key Specifications

Pinout & Package

Ultra-small Resin Package (URP, JEITA code SC-76A) with 2-pin surface-mount configuration; body dimensions 0.8 mm × 1.5 mm × 0.45 mm (max height), mass 0.004 g, taping format TRF (3,000 pcs/reel).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with BZX584-C3V6 and MMSZ4685, the HZU3.6B1TRF-E offers superior voltage accuracy (±3.5% vs. ±5%), smallest footprint (0.8 × 1.5 mm), and optimized dynamic resistance for reference use-making it preferred for precision, space-constrained applications where regulation stability outweighs raw power handling.

Availability

HZU3.6B1TRF-E is available at Aetrix Electronics and suitable for portable sensor biasing, low-voltage reference generation, and overvoltage clamp protection requiring stable component supply, RoHS-compliant packaging, and tape-and-reel delivery for automated assembly.

Supply support for HZU3.6B1TRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor manufacturer specializing in microcontrollers, analog, and power devices, with leadership in automotive, industrial, and IoT solutions.

The HZU Series belongs to Renesas' precision discrete portfolio, engineered specifically for compact, high-stability voltage reference and stabilization in space- and power-constrained applications.

FAQ

What is the Zener voltage range for HZU3.6B1TRF-E at 5 mA test current?

The HZU3.6B1TRF-E has a guaranteed Zener voltage range of 3.70 V to 3.97 V when tested at I_Z = 5 mA, reflecting its B1-grade tolerance (±3.5% around nominal 3.6 V). This tight spread ensures predictable performance in reference and regulation circuits without post-manufacturing calibration. The specification is validated per R07DS0423EJ1000 Rev.10.00, Page 2.

Is HZU3.6B1TRF-E suitable for use in automotive applications?

HZU3.6B1TRF-E is classified as a Standard-grade Renesas product, qualified for industrial and consumer applications including computers, office equipment, and portable electronics-but not certified for automotive (High Quality grade) or safety-critical (Specific grade) use. Its junction temperature rating of 150°C supports under-hood proximity if system-level validation confirms compliance with AEC-Q101 requirements. Always consult Renesas for formal qualification status before automotive deployment.

What is the package type and dimensions of HZU3.6B1TRF-E?

HZU3.6B1TRF-E uses the Ultra-small Resin Package (URP), also known as SC-76A per JEITA, with dimensions of 0.8 mm (width) × 1.5 mm (length) × 0.45 mm (max height) and typical mass of 0.004 g. It features a 2-pin configuration with cathode marked on the top surface. Full mechanical details appear in R07DS0423EJ1000 Rev.10.00, Page 6.

Does HZU3.6B1TRF-E have a specified temperature coefficient?

Yes-the HZU3.6B1TRF-E exhibits a Zener voltage temperature coefficient (γ_Z) of approximately –0.04 %/°C (–40 mV/°C) near 3.6 V, as shown in Figure 2 of R07DS0423EJ1000 Rev.10.00. This negative coefficient means its Zener voltage decreases slightly with rising temperature, a characteristic useful for compensating positive-drift components in reference designs.

What is the maximum reverse leakage current for HZU3.6B1TRF-E?

The maximum reverse leakage current (I_R) for HZU3.6B1TRF-E is 10 µA at V_R = 1.0 V and T_a = 25°C, per Electrical Characteristics table on Page 2 of R07DS0423EJ1000 Rev.10.00. This low leakage supports energy-efficient operation in battery-powered systems where standby current must be minimized.