Renesas HZU4.7B2TRF-P-E

Overview

HZU4.7B2TRF-P-E from Renesas Electronics is a silicon epitaxial planar Zener diode optimized for hard-knee, low-noise voltage reference applications, with nominal Zener voltage 4.7 V (min 4.6 V, max 5.0 V), dynamic resistance 380 Ω at IZT = 3.0 mA, and ultra-low noise voltage approximately 1/3 to 1/10 that of standard HZU series devices. It operates in surface-mount URP (Ultra small Resin Package) and is used in precision analog front-ends and low-drift reference circuits.

For engineers reviewing the HZU4.7B2TRF-P-E datasheet, HZU4.7B2TRF-P-E pinout, HZU4.7B2TRF-P-E application, or HZU4.7B2TRF-P-E equivalent, key selection criteria include its semi-logarithmic Vz–Iz linearity from 1 nA to 1 mA, temperature coefficient of −0.03 mV/°C (typical), and suitability for low-current, high-stability biasing in instrumentation amplifiers and sensor signal conditioning.

Technical Context

The HZU4.7B2TRF-P-E implements a hard-knee Zener breakdown structure with epitaxial planar junction design, enabling stable reverse conduction onset and minimal knee curvature. Its Vz–Iz characteristics are semi-logarithmic linear across six decades (1 nA to 1 mA), supporting accurate low-current regulation without external compensation.

It exhibits a Zener temperature coefficient of −0.03 mV/°C (typical) - approximately half that of the legacy HZU series - and achieves low-noise performance via optimized doping profile and junction geometry. The device is rated for 150 mW power dissipation at 25°C with derating above Ta = 25°C per Fig.3.

Key Specifications

Pinout & Package

Package: Ultra small Resin Package (URP), JEITA code PTSP0002ZA-A, Renesas code URP/URPV, SC-76A outline, mass 0.004 g (typ). Dimensions: A1 = 0.15–0.45 mm, A2 = 0.75–1.05 mm, b = 1.55–1.85 mm, D = 0.80 mm, E = 2.30–2.50 mm, e1 = 1.10–1.40 mm, l1 = 0.80 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with MMSZ4704T1G and BZX84-C4V7, the HZU4.7B2TRF-P-E delivers superior thermal stability (−0.03 mV/°C vs. >−2.0 mV/°C), verified low-noise performance, and guaranteed semi-log linearity down to 1 nA - making it uniquely suited for high-fidelity analog signal conditioning where drift and noise dominate error budgets.

Availability

HZU4.7B2TRF-P-E is available at Aetrix Electronics and suitable for high-precision voltage reference, low-noise sensor biasing, and compact power supply monitoring applications requiring stable component supply and long-term parametric consistency.

Supply support for HZU4.7B2TRF-P-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and enterprise applications.

The HZU-LL Series is part of Renesas' precision analog portfolio, designed specifically for low-noise, hard-knee Zener reference applications demanding ultra-stable voltage regulation and minimal thermal drift in compact SMT form factors.

FAQ

What is the Zener voltage tolerance of HZU4.7B2TRF-P-E?

The HZU4.7B2TRF-P-E has a Zener voltage range of 4.6 V minimum to 5.0 V maximum at I_Z = 0.5 mA, corresponding to a nominal 4.7 V rating with ±0.3 V absolute tolerance. This specification is confirmed in the Electrical Characteristics table on page 2 of REJ03G1216-0500 Rev.5.00 and defines the guaranteed operating window for precision reference use cases.

Does HZU4.7B2TRF-P-E support low-current regulation below 1 µA?

Yes, the HZU4.7B2TRF-P-E exhibits semi-logarithmic V_Z–I_Z linearity from I_Z = 1 nA to 1 mA, as explicitly stated in the Features section on page 1 of REJ03G1216-0500 Rev.5.00. This enables stable regulation and predictable voltage drop even in nanoampere-biased circuits such as ultra-low-power sensor interfaces and standby-mode references.

What is the thermal performance of HZU4.7B2TRF-P-E?

The HZU4.7B2TRF-P-E has a Zener temperature coefficient of −0.03 mV/°C (typical), approximately half that of the standard HZU series, and a maximum junction temperature of 150°C. Its power dissipation derates linearly above 25°C ambient per Figure 3, supporting reliable operation in industrial environments up to 85°C board temperature with appropriate copper area.

Is HZU4.7B2TRF-P-E RoHS-compliant and lead-free?

Yes, HZU4.7B2TRF-P-E conforms to RoHS Directive 2011/65/EU and is lead-free. The "-P-E" suffix in the part number denotes lead-free plating and RoHS compliance, consistent with Renesas' standard packaging and environmental specifications documented in their product change notices and material declarations.

What package type does HZU4.7B2TRF-P-E use and what are its key dimensions?

HZU4.7B2TRF-P-E uses the Ultra small Resin Package (URP), also known as SC-76A, with JEITA code PTSP0002ZA-A. Key dimensions include body size 0.80 mm × 1.25 mm (E × D), terminal pitch e1 = 1.10–1.40 mm, and height A2 = 0.75–1.05 mm - enabling high-density placement in space-constrained PCB designs.