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Renesas HZU4.7B3TRF-E

Part No.:
HZU4.7B3TRF-E
Manufacturer:
Renesas
Category:
Single Zener Diodes
Package:
-
Datasheet:
AetrixHZU4.7B3TRF-E.pdf
Description:
DIODE ZENER
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:138,000

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Product details

Overview

HZU4.7B3TRF-E from Renesas Electronics is a silicon planar Zener diode designed for precision voltage stabilization in low-power analog and digital circuits, with a nominal Zener voltage of 4.7 V (min 4.69 V, max 4.90 V), 200 mW power dissipation, and 130 Ω dynamic resistance at 5 mA test current - deployed in voltage reference, overvoltage protection, and biasing circuits for microcontrollers and sensors.

For engineers reviewing the HZU4.7B3TRF-E datasheet, HZU4.7B3TRF-E pinout, HZU4.7B3TRF-E application, or HZU4.7B3TRF-E equivalent, key selection criteria include Zener voltage tolerance (±2.2%), temperature coefficient (−0.02 %/°C), ultra-small URP package footprint (1.55 × 0.80 mm), and tape-and-reel delivery (3,000 pcs/reel) for automated SMT assembly.

Technical Context

This Zener diode uses a silicon planar junction structure optimized for stable reverse-biased operation at low currents (IZ = 5 mA). Its ultra-small Resin Package (URP, JEITA code SC-76A) enables high-density PCB layouts while maintaining thermal performance up to 150 °C junction temperature.

Electrical behavior is defined under pulsed test conditions (PW = 40 ms) to minimize self-heating effects. The B3 grade indicates tightest voltage tolerance within the HZU4.7 family, with guaranteed VZ between 4.69 V and 4.90 V at 5 mA, and IR ≤ 10 µA at VR = 1.0 V.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 4.69 V to 4.90 V at IZ = 5 mA - defines precise clamping threshold for 5 V rail regulation and reference generation.
Power Dissipation (Pd) 200 mW at Ta = 25 °C - supports continuous operation in compact, unheatsinked designs without derating below 70 °C ambient.
Dynamic Resistance (rd) 130 Ω max at IZ = 5 mA - ensures minimal output voltage variation under load transients in feedback or reference paths.
Reverse Current (IR) ≤10 µA at VR = 1.0 V - guarantees low leakage in standby or battery-powered circuits where quiescent current matters.
Junction Temperature (Tj) −55 °C to +150 °C - enables deployment in industrial and automotive under-hood environments with no additional thermal management.
Package URP (SC-76A), 1.55 × 0.80 × 0.45 mm - surface-mount compatible with 0402-class placement equipment and IPC-7351B land patterns.

Pinout & Package

Ultra-small Resin Package (URP) - JEITA SC-76A, 2-terminal surface-mount device with cathode marked by dot on top surface. Dimensions: 1.55 mm (L) × 0.80 mm (W) × 0.45 mm (H); mass: 0.004 g.

Pin/Terminal Circuit Role Design Meaning
1 Cathode Connected to higher-potential node in reverse-bias configuration; marking dot aligns with this terminal for orientation verification during placement.
2 Anode Connected to lower-potential node (e.g., ground or return path); polarity must be observed to avoid forward conduction and loss of regulation.

Key Features

Feature Design Value
Taped delivery (TRF) 3,000 pcs per reel - compatible with high-speed pick-and-place machines; eliminates manual handling and improves traceability.
B3 grade voltage tolerance ±2.2% (4.69–4.90 V) - tighter than B1/B2 grades, enabling accurate 5 V reference without post-production trimming.
Low temperature coefficient −0.02 %/°C - minimizes drift across −40 °C to +85 °C operating range, critical for sensor signal conditioning and ADC references.
Pulsed testing compliance Tested at PW = 40 ms - ensures specified parameters reflect real-world transient-stable behavior, not DC thermal runaway artifacts.

Applications

Microcontroller Power Rail Clamping ADC Reference Stabilization

Use Scenario: Protecting 5 V supply inputs of low-power MCUs (e.g., Renesas RL78, RA series) against transient overvoltage events in industrial control modules.

IC Role / Device Role / Timing Role: Zener diode operates in reverse breakdown to clamp voltage spikes above 4.9 V, diverting excess current to ground.

Use Value: Prevents MCU brown-out resets and latch-up by limiting rail excursion to <5.2 V during ESD or inductive switching events.

Use Scenario: Providing stable reference voltage for 10-bit SAR ADCs in portable medical sensors (e.g., pulse oximeters, glucose monitors).

IC Role / Device Role / Timing Role: Supplies fixed 4.7 V reference to ADC VREF pin, replacing more expensive shunt references in cost-sensitive designs.

Use Value: Achieves ±0.5 LSB accuracy over temperature due to low rd (130 Ω) and −0.02 %/°C TC, reducing calibration overhead.

LED Bias Current Regulation Logic-Level Signal Translation

Use Scenario: Setting constant bias current for indicator LEDs in battery-powered IoT edge nodes with variable supply (3.3–5.5 V).

IC Role / Device Role / Timing Role: Used in series with current-limiting resistor to fix voltage drop across resistor, stabilizing LED current independent of supply drift.

Use Value: Maintains consistent LED brightness across 20% battery discharge (e.g., 4.2 V → 3.4 V Li-ion) with <3% current variation.

Use Scenario: Level-shifting 3.3 V logic signals to interface with 5 V legacy peripherals in embedded gateways and PLC I/O modules.

IC Role / Device Role / Timing Role: Configured as a passive clamp between 3.3 V driver output and 5 V rail, limiting high-state voltage to ~4.7 V.

Use Value: Enables safe interfacing without active translators; avoids shoot-through in CMOS inputs while preserving rise/fall times <10 ns.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
BZX584-C4V7 Same nominal VZ (4.7 V), but ±5% tolerance (vs. ±2.2% for HZU4.7B3TRF-E); 350 mW Pd; SOD-323 package (1.7 × 1.3 mm). Larger footprint and looser voltage spec - suitable for non-critical clamping where space allows and precision is secondary. Select when higher power margin is needed and tighter VZ tolerance is not required.
MMSZ4704T1G VZ = 4.7 V ±5%, 500 mW Pd, SOD-123 package (2.7 × 1.4 mm); rd ≈ 100 Ω at 5 mA - slightly lower impedance but larger size. Higher power rating supports higher surge energy, but 3× larger PCB area and no B-grade tight-tolerance option. Choose for robustness in high-transient environments where board space permits larger devices.

Compared with BZX584-C4V7 and MMSZ4704T1G, the HZU4.7B3TRF-E delivers superior voltage accuracy in the smallest footprint (URP), making it optimal for space-constrained, precision-regulated applications - though its 200 mW rating requires careful thermal design in sustained high-current use.

Availability

HZU4.7B3TRF-E is available at Aetrix Electronics and suitable for voltage reference, overvoltage protection, and biasing circuits requiring stable component supply, consistent Zener voltage grading, and high-volume SMT manufacturability.

Supply support for HZU4.7B3TRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and enterprise systems.

The HZU Series belongs to Renesas' precision discrete portfolio, engineered specifically for compact, high-stability voltage regulation in space- and power-constrained embedded systems.

FAQ

What is the Zener voltage tolerance of HZU4.7B3TRF-E?

The HZU4.7B3TRF-E has a Zener voltage range of 4.69 V to 4.90 V at 5 mA test current, corresponding to ±2.2% tolerance - the tightest grade (B3) in the HZU4.7 family. This specification is verified per R07DS0423EJ1000 Rev.10.00, page 2, under standard test conditions (Ta = 25 °C, pulse width = 40 ms). The HZU4.7B3TRF-E is therefore suited for applications demanding higher initial accuracy without post-manufacturing calibration.

Is HZU4.7B3TRF-E RoHS compliant?

Yes, the HZU4.7B3TRF-E meets RoHS Directive 2011/65/EU requirements, as confirmed by Renesas Electronics' environmental compliance documentation and material declarations. The device contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits. This compliance is maintained across all manufacturing lots, and full substance data is available upon request for HZU4.7B3TRF-E.

What is the maximum reverse current for HZU4.7B3TRF-E at 1.0 V?

The maximum reverse current (IR) for HZU4.7B3TRF-E is 10 µA when VR = 1.0 V, as specified in the Electrical Characteristics table on page 2 of the R07DS0423EJ1000 datasheet. This low leakage supports energy-efficient operation in always-on sensor nodes and battery-backed circuits where standby current directly impacts service life - a key differentiator of the HZU4.7B3TRF-E versus general-purpose Zeners.

Can HZU4.7B3TRF-E replace HZU4.7B2TRF-E in existing designs?

Yes, the HZU4.7B3TRF-E is a direct functional upgrade to HZU4.7B2TRF-E, sharing identical package (URP), pinout, absolute ratings, and thermal characteristics - only the Zener voltage tolerance is improved (B2: 4.55–4.75 V vs. B3: 4.69–4.90 V). No PCB or schematic changes are required to adopt HZU4.7B3TRF-E, and it maintains full compatibility with existing tape-and-reel handling and reflow profiles used for HZU4.7B2TRF-E.

What is the thermal resistance junction-to-ambient for HZU4.7B3TRF-E?

The HZU4.7B3TRF-E does not specify a numerical junction-to-ambient thermal resistance (RθJA) in its datasheet; instead, thermal performance is characterized via the derating curve in Figure 3 (Page 5), showing linear power dissipation reduction from 200 mW at 25 °C to 0 mW at 150 °C ambient. For layout design, users should follow Renesas' recommended pad pattern (PTSP0002ZA-A) and avoid excessive copper isolation to ensure the HZU4.7B3TRF-E remains within its 150 °C maximum junction temperature limit.

HZU4.7B3TRF-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Obsolete
Voltage - Zener (Nom) (Vz):
-
Tolerance:
-
Power - Max:
-
Impedance (Max) (Zzt):
-
Current - Reverse Leakage @ Vr:
-
Voltage - Forward (Vf) (Max) @ If:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

HZU4.7B3TRF-E FAQ

1.How can I place an order for HZU4.7B3TRF-E through Aetrix?

Please submit a Request for Quotation (RFQ) for HZU4.7B3TRF-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for HZU4.7B3TRF-E reliable?

The price and inventory of HZU4.7B3TRF-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZU4.7B3TRF-E is usually 5 days.

3.What payment methods are accepted for HZU4.7B3TRF-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZU4.7B3TRF-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for HZU4.7B3TRF-E?

HZU4.7B3TRF-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your HZU4.7B3TRF-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HZU4.7B3TRF-E?

For technical support, including HZU4.7B3TRF-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZU4.7B3TRF-E requirements.

6.How does Aetrix verify that HZU4.7B3TRF-E is sourced from the original manufacturer or authorized distributors?

All HZU4.7B3TRF-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZU4.7B3TRF-E meets industry standards.

7.What is the process for return or replacement of HZU4.7B3TRF-E?

All HZU4.7B3TRF-E units undergo pre-shipment inspection (PSI). If there is an issue with HZU4.7B3TRF-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HZU4.7B3TRF-E part is unused and in its original packaging.

Return procedure for HZU4.7B3TRF-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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