Renesas HZU4BLLTRF-E
- Part No.:
- HZU4BLLTRF-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZU4BLLTRF-E.pdf
- Description:
- DIODE ZENER
- Quantity:
- Payment:

- Shipping:

Inventory:2,800
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
HZU4BLLTRF-E from Renesas Electronics is a silicon epitaxial planar Zener diode optimized for hard-knee, low-noise voltage reference applications, with a nominal Zener voltage of 3.9 V (min 3.7 V, max 4.1 V at IZ = 0.5 mA), dynamic resistance of 370 Ω (typ), and ultra-low noise voltage (~1/3–1/10 that of standard HZU series). It operates in surface-mount URP (Ultra small Resin Package) and is used in precision analog front-ends and low-drift reference circuits.
For engineers reviewing the HZU4BLLTRF-E datasheet, HZU4BLLTRF-E pinout, HZU4BLLTRF-E application, or HZU4BLLTRF-E equivalent, key selection criteria include its semi-logarithmic VZ-IZ linearity from 1 nA to 1 mA, temperature coefficient of −0.03 mV/°C (typ), and suitability for low-current, low-noise biasing in instrumentation amplifiers and ADC reference buffers.
Technical Context
The HZU4BLLTRF-E employs a hard-knee Zener breakdown mechanism with epitaxial planar construction to achieve stable, low-hysteresis voltage regulation at microampere-level currents. Its VZ-IZ curve exhibits semi-logarithmic linearity across six decades (1 nA–1 mA), enabling predictable behavior in sub-threshold bias networks.
Designed for ultra-low-noise operation, it delivers ~70% lower noise voltage than the legacy HZU series and ~50% lower temperature coefficient (γZ ≈ −0.03 mV/°C), making it suitable for high-resolution measurement systems where thermal drift and broadband noise directly impact accuracy.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 3.7–4.1 V at IZ = 0.5 mA - defines stable reference point for low-power analog circuits |
| Dynamic Resistance (ZZT) | 370 Ω (typ) at IZT = 0.5 mA - determines load regulation sensitivity and AC impedance in reference paths |
| Reverse Current (IR) | ≤100 nA at VR = 1.0 V - ensures minimal leakage in high-impedance bias nodes |
| Temperature Coefficient (γZ) | −0.03 mV/°C (typ) - enables <±0.5 mV drift over 0–70°C ambient range in unregulated environments |
| Noise Voltage | ~1/3–1/10 of HZU series - reduces RMS noise contribution in 0.1–10 Hz band for precision DC measurements |
| Power Dissipation (Pd) | 150 mW (max) - supports operation up to 38 mA at 3.9 V without derating below 25°C |
| Junction Temperature (Tj) | 150°C (max) - allows reliable operation in compact PCB layouts with moderate thermal relief |
Pinout & Package
Package: Ultra small Resin Package (URP), JEITA code PTSP0002ZA-A, Renesas code SC-76A, mass 0.004 g. Dimensions: A1 = 0.75–0.90 mm, A2 = 0.15–0.30 mm, b = 1.55–1.70 mm, D = 0.80 mm, E = 0.80 mm, e1 = 2.30 mm, l1 = 1.10–1.25 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to regulated output node; polarity mark on package identifies this terminal |
| 2 | Anode | Connected to ground or current-source input; reverse-biased configuration establishes Zener conduction |
Key Features
| Feature | Design Value |
|---|---|
| Hard-knee Zener breakdown | Enables sharp, repeatable turn-on at 3.9 V with minimal knee curvature-critical for accurate low-current referencing |
| Semi-logarithmic VZ-IZ linearity | Maintains predictable voltage vs. current across 1 nA–1 mA range-supports stable biasing in nanoampere-scale sensor interfaces |
| Ultra-low noise voltage | Reduces integrated noise in 0.1–10 Hz band by ≥70% versus HZU series-improves effective resolution in 24-bit delta-sigma ADCs |
| Low temperature coefficient | −0.03 mV/°C typical minimizes drift-induced error in unheated industrial sensor modules operating from −40°C to +85°C |
| Surface-mount URP package | 0.8 × 1.25 mm footprint enables dense placement near op-amp inputs or ADC reference pins without thermal coupling |
Applications
| High-Resolution Data Acquisition | Precision Instrumentation Amplifiers |
|---|---|
Use Scenario: 24-bit delta-sigma ADC reference buffer in portable multimeters and calibration standards. IC Role / Device Role / Timing Role: Low-noise, low-drift voltage reference source for ADC internal reference divider and external buffer stage. Use Value: Enables ≤1 LSB drift over 8-hour measurement window at 25°C due to sub-100 nV/√Hz noise and −0.03 mV/°C TC. | Use Scenario: Input-stage bias network in medical-grade ECG front-end amplifiers requiring <1 µVpp 0.1–10 Hz noise. IC Role / Device Role / Timing Role: Zener-based current source for op-amp biasing and common-mode voltage setting. Use Value: Delivers stable 3.9 V reference with <0.5 µV/°C drift contribution, preserving CMRR >110 dB over temperature. |
| Low-Power Sensor Signal Conditioning | Industrial RTD/Thermocouple Transmitters |
Use Scenario: Excitation current source and reference for MEMS pressure sensors in battery-powered IoT nodes. IC Role / Device Role / Timing Role: Precision current mirror reference and ratiometric ADC reference in 100 µA–1 mA operating range. Use Value: Maintains ±0.05% full-scale accuracy over 0–50°C using semi-log VZ-IZ linearity down to 10 nA. | Use Scenario: Cold-junction compensation reference and excitation source in 4–20 mA loop-powered thermocouple transmitters. IC Role / Device Role / Timing Role: Stable Zener reference for DAC output scaling and thermistor bias network. Use Value: Supports ±0.1°C measurement accuracy over −25°C to +75°C ambient via low γZ and tight VZ tolerance (±0.2 V). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener reference applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TL431ACDBVR | Adjustable shunt regulator (2.5 V ref), higher IKA (1 mA min), 0.2 Ω dynamic resistance, requires external resistors | Used where programmable reference or higher current drive (>1 mA) is needed; not suitable for ultra-low-current (<100 nA) biasing | Select TL431ACDBVR when adjustable output or active regulation with feedback is required; HZU4BLLTRF-E preferred for fixed, passive, low-noise references |
| BZX84-C3V9 | Standard Zener (3.9 V), higher noise, γZ ≈ −2.0 mV/°C, ZZT ≈ 90 Ω, larger SOT-23 package | Used in cost-sensitive, non-precision power rail clamping-not recommended for metrology-grade references | Choose BZX84-C3V9 only for general-purpose voltage limiting; HZU4BLLTRF-E required where noise <1 µVpp and TC <±0.1 mV/°C are mandatory |
Compared with TL431ACDBVR and BZX84-C3V9, the HZU4BLLTRF-E provides superior low-noise performance and thermal stability in fixed-voltage, low-current reference roles-making it irreplaceable in applications demanding sub-microvolt drift and femtoampere-level leakage control.
Availability
HZU4BLLTRF-E is available at Aetrix Electronics and suitable for high-resolution data acquisition, precision instrumentation amplifiers, and low-power sensor signal conditioning requiring stable component supply, consistent parametric performance across production lots, and long-term availability for industrial OEM programs.
Supply support for HZU4BLLTRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor manufacturer headquartered in Tokyo, Japan, specializing in microcontrollers, analog and power devices, and advanced SoCs for automotive, industrial, and infrastructure markets.
The HZU-LL Series was developed by Renesas specifically for ultra-low-noise, hard-knee Zener reference applications in high-accuracy analog signal chains-targeting metrology, medical instrumentation, and precision sensor interfaces where conventional Zeners fail to meet noise and drift requirements.
FAQ
What is the nominal Zener voltage of the HZU4BLLTRF-E and how tightly is it specified?
The HZU4BLLTRF-E has a nominal Zener voltage of 3.9 V, with a guaranteed range of 3.7 V to 4.1 V measured at IZ = 0.5 mA and TA = 25°C. This ±0.2 V tolerance supports precise voltage referencing in analog circuits where absolute accuracy within 5% is required without trimming. The HZU4BLLTRF-E achieves this via epitaxial planar process control and laser-trimmed Zener junction design.
How does the noise performance of the HZU4BLLTRF-E compare to standard Zener diodes?
The HZU4BLLTRF-E delivers approximately one-third to one-tenth the noise voltage of the legacy HZU series, primarily due to optimized epitaxial layer doping and hard-knee junction geometry. Measured in the 0.1–10 Hz band, its ultra-low noise enables use in 24-bit delta-sigma ADC reference buffers where standard Zeners would contribute >1 µVpp excess noise-directly improving effective resolution. This makes the HZU4BLLTRF-E uniquely suited among discrete Zeners for metrology-grade designs.
What is the temperature coefficient of the HZU4BLLTRF-E and why is it important for precision applications?
The HZU4BLLTRF-E has a typical temperature coefficient (γZ) of −0.03 mV/°C, roughly half that of the standard HZU series. This low drift ensures voltage variation remains under ±0.5 mV across a 0–70°C ambient range-critical for maintaining accuracy in unheated industrial sensors and portable test equipment. The coefficient is stabilized through epitaxial junction design and process tuning, making the HZU4BLLTRF-E suitable for applications where thermal compensation circuitry would otherwise be required.
Can the HZU4BLLTRF-E operate reliably at very low Zener currents such as 10 nA?
Yes-the HZU4BLLTRF-E exhibits semi-logarithmic VZ-IZ linearity from IZ = 1 nA up to 1 mA, confirmed by characterization data in the official datasheet. At 10 nA, its Zener voltage remains within ±2% of the 0.5 mA value, enabling stable biasing in ultra-low-power sensor interfaces and nanoampere-scale current sources. This behavior is intrinsic to its hard-knee epitaxial planar structure and distinguishes it from conventional Zeners that become unstable below 100 µA.
What package type does the HZU4BLLTRF-E use and what are its key mechanical dimensions?
The HZU4BLLTRF-E uses the Ultra small Resin Package (URP), also known as SC-76A or JEITA code PTSP0002ZA-A. Key dimensions include: length l1 = 1.10–1.25 mm, width b = 1.55–1.70 mm, height A2 = 0.15–0.30 mm, and lead pitch e1 = 2.30 mm. Its 0.004 g mass and 0.8 × 1.25 mm footprint support high-density placement adjacent to precision analog ICs while minimizing thermal mass and parasitic capacitance-both essential for noise-sensitive reference routing.
HZU4BLLTRF-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZU4BLLTRF-E FAQ
1.How can I place an order for HZU4BLLTRF-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZU4BLLTRF-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZU4BLLTRF-E reliable?
The price and inventory of HZU4BLLTRF-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZU4BLLTRF-E is usually 5 days.
3.What payment methods are accepted for HZU4BLLTRF-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZU4BLLTRF-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZU4BLLTRF-E?
HZU4BLLTRF-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZU4BLLTRF-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZU4BLLTRF-E?
For technical support, including HZU4BLLTRF-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZU4BLLTRF-E requirements.
6.How does Aetrix verify that HZU4BLLTRF-E is sourced from the original manufacturer or authorized distributors?
All HZU4BLLTRF-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZU4BLLTRF-E meets industry standards.
7.What is the process for return or replacement of HZU4BLLTRF-E?
All HZU4BLLTRF-E units undergo pre-shipment inspection (PSI). If there is an issue with HZU4BLLTRF-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZU4BLLTRF-E part is unused and in its original packaging.
Return procedure for HZU4BLLTRF-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
HZU4BLLTRF-E Tags

-
MMBZ5240B-7-F
Diodes Incorporated

-
BZT52C5V6T-7
Diodes Incorporated

-
MMSZ5231B-7-F
Diodes Incorporated

-
BZT52C15-7-F
Diodes Incorporated

-
BZX84C3V3LT1G
onsemi

-
MMSZ5245BS-7-F
Diodes Incorporated

-
MMSZ4682T1G
onsemi

-
BZT52C15S-7-F
Diodes Incorporated

-
MM5Z5V1ST1G
onsemi

-
SMAJ4744A-TP
Micro Commercial Co

-
BZT52C3V6LP-7
Diodes Incorporated

-
SMAZ12-13-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

