Renesas HZU5.1B2JTRF-E

Overview

HZU5.1B2JTRF-E from Renesas Electronics is a silicon epitaxial planar Zener diode optimized for hard-knee, low-noise voltage reference applications. It delivers a nominal Zener voltage of 4.8 V (min 4.6 V, max 5.0 V) at 0.5 mA, with dynamic resistance of 3.0 Ω (typ), temperature coefficient of −1.5 mV/°C, and ultra-low noise voltage-approximately 1/3 to 1/10 that of the standard HZU series. It is used in precision analog front-ends and low-drift reference circuits.

For engineers reviewing the HZU5.1B2JTRF-E datasheet, HZU5.1B2JTRF-E pinout, HZU5.1B2JTRF-E application, or HZU5.1B2JTRF-E equivalent, key selection criteria include its hard-knee Vz–Iz linearity (1 nA to 1 mA), ultra-small URP package (SC-76A), low thermal drift, and suitability for low-noise biasing in instrumentation amplifiers and ADC reference buffers.

Technical Context

The HZU5.1B2JTRF-E employs a silicon epitaxial planar junction structure enabling semi-logarithmic linear Zener voltage vs. current characteristics across an exceptionally wide reverse current range-from 1 nA to 1 mA. Its hard-knee behavior ensures stable regulation onset without soft turn-on ambiguity.

Designed specifically for low-noise operation, it achieves ~70% lower temperature coefficient (−1.5 mV/°C) and significantly reduced voltage noise versus legacy HZU-series diodes. The device operates within a junction temperature range of −55°C to +150°C and is rated for 150 mW power dissipation at 25°C ambient.

Key Specifications

Pinout & Package

Package: Ultra Small Resin Package (URP), JEITA code PTSP0002ZA-A, SC-76A outline, mass 0.004 g. Dimensions: 1.10 mm × 0.80 mm × 0.45 mm (L × W × H).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with MMSZ5231B-TP and BZX84-C4V7, the HZU5.1B2JTRF-E offers superior low-noise performance, tighter V_Z tolerance, lower dynamic resistance, and a smaller URP footprint-making it the optimal choice for high-resolution data acquisition and low-drift analog signal chains where space and precision are co-constrained.

Availability

HZU5.1B2JTRF-E is available at Aetrix Electronics and suitable for high-precision voltage reference, low-noise instrumentation amplifier bias, and thermally stable sensor excitation requiring stable component supply and consistent parametric performance across production lots.

Supply support for HZU5.1B2JTRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer specializing in microcontrollers, analog and power devices, and system-on-chip solutions for industrial, automotive, and infrastructure markets.

The HZU-LL Series was developed to address demand for ultra-low-noise, hard-knee Zener diodes in high-fidelity analog measurement systems-specifically targeting applications where traditional Zeners introduce unacceptable voltage noise or thermal drift.

FAQ

What is the nominal Zener voltage of the HZU5.1B2JTRF-E and how tightly is it specified?

The HZU5.1B2JTRF-E has a nominal Zener voltage of 4.8 V, with a guaranteed range of 4.6 V to 5.0 V at I_Z = 0.5 mA. This ±0.2 V tolerance (±4.2%) reflects its design as a precision low-noise reference rather than a general-purpose Zener. The specification is verified per Renesas REJ03G1216-0500 Rev.5.00 test conditions and applies across the full operating temperature range.

Does the HZU5.1B2JTRF-E support operation at very low reverse currents, and what is its minimum usable current?

Yes-the HZU5.1B2JTRF-E exhibits semi-logarithmic linear V_Z–I_Z behavior down to 1 nA, making it functional even in ultra-low-power bias networks. Its specified linearity range (1 nA to 1 mA) means regulation remains predictable and monotonic across six decades of current, unlike conventional Zeners that exhibit soft knee or discontinuity below ~10 µA.

How does the temperature coefficient of the HZU5.1B2JTRF-E compare to standard Zener diodes, and why does it matter?

The HZU5.1B2JTRF-E has a temperature coefficient of −1.5 mV/°C-approximately half that of typical 4.7 V Zeners (e.g., −2.5 to −3.0 mV/°C). This directly reduces thermal drift in precision references: over a 50°C ambient shift, HZU5.1B2JTRF-E contributes only −75 mV drift versus −125–150 mV for standard parts, improving long-term DC accuracy in unheated enclosures.

Is the HZU5.1B2JTRF-E RoHS-compliant and lead-free?

Yes-the HZU5.1B2JTRF-E is RoHS-compliant and lead-free, conforming to EU Directive 2011/65/EU. Renesas confirms halogen-free resin packaging and compliant plating per their environmental policy documentation. The "-E" suffix in the part number denotes lead-free, green compliance per industry standards.

What is the maximum power dissipation rating for the HZU5.1B2JTRF-E, and how does it derate with temperature?

The HZU5.1B2JTRF-E is rated for 150 mW maximum power dissipation at T_a = 25°C. Derating follows a linear slope: power must be reduced by 1.2 mW/°C above 25°C, reaching zero at T_a = 150°C. This allows safe operation up to 100°C ambient at ~60 mW, supporting use in thermally dense analog modules without forced cooling.