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Renesas HZU5.6B2TRF-P-E
- Part No.:
- HZU5.6B2TRF-P-E
- Manufacturer:
- Renesas
- Category:
- Single Zener Diodes
- Package:
- -
- Datasheet:
-
HZU5.6B2TRF-P-E.pdf
- Description:
- DIODE ZENER
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Product details
Overview
HZU5.6B2TRF-P-E from Renesas Electronics is a silicon epitaxial planar Zener diode optimized for hard-knee, low-noise voltage reference applications. It delivers a nominal Zener voltage of 5.6 V at 0.5 mA, with dynamic resistance of 380 Ω (typical), temperature coefficient of −1.5 mV/°C, and ultra-low noise voltage-approximately 1/3 to 1/10 that of standard HZU-series diodes. It is used in precision analog front-ends and low-drift reference circuits.
For engineers reviewing the HZU5.6B2TRF-P-E datasheet, HZU5.6B2TRF-P-E pinout, HZU5.6B2TRF-P-E application, or HZU5.6B2TRF-P-E equivalent, key selection criteria include its hard-knee Vz–Iz linearity (1 nA to 1 mA), ultra-small URP package (PTSP0002ZA-A), low thermal drift, and suitability for low-noise biasing in instrumentation amplifiers and ADC reference buffers.
Technical Context
The HZU5.6B2TRF-P-E employs a silicon epitaxial planar structure to achieve sharp Zener knee characteristics and stable breakdown behavior across low-current operation. Its semi-logarithmic linear Vz–Iz response from 1 nA to 1 mA enables accurate low-current regulation and high-impedance sensing.
Designed for minimal thermal drift, it exhibits a Zener voltage temperature coefficient of −1.5 mV/°C (≈ −0.027 %/°C), roughly half that of the legacy HZU series. This stability supports use in battery-powered and thermally unregulated environments where long-term reference accuracy is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 4.6 V to 5.0 V at IZ = 0.5 mA - defines tight regulation window for precision reference design |
| Dynamic Resistance (ZZT) | 380 Ω typical at IZT = 0.5 mA - ensures minimal output impedance variation under load shifts |
| Reverse Current (IR) | ≤100 nA at VR = 4.0 V - enables ultra-low leakage in high-impedance bias networks |
| Temperature Coefficient (γZ) | −1.5 mV/°C - reduces drift-induced error to < ±0.75 mV over 0–50°C ambient range |
| Power Dissipation (Pd) | 150 mW maximum at Ta = 25°C - constrains usable current to ≤26.8 mA at 5.6 V without derating |
| Junction Temperature (Tj) | 150°C maximum - sets thermal safety margin for PCB layout and copper pour design |
Pinout & Package
Package: Ultra Small Resin Package (URP), JEITA code PTSP0002ZA-A, Renesas code SC-76A, mass ≈ 0.004 g. Surface-mount compatible with 0.8 mm × 1.25 mm footprint and 0.45 mm max height.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to regulated output node; polarity mark on package surface aligns with this terminal |
| 2 | Anode | Ground or common reference return; required for proper reverse-bias conduction |
Key Features
| Feature | Design Value |
|---|---|
| Hard-knee Zener characteristic | VZ–IZ curve remains semi-logarithmically linear from 1 nA to 1 mA - enables stable biasing down to nanoampere currents |
| Ultra-low noise voltage | Approximately 1/3–1/10 lower than HZU series - reduces RMS noise contribution in sensitive analog signal chains |
| Reduced temperature coefficient | ≈1/2 that of HZU series (−1.5 mV/°C) - improves long-term DC accuracy in non-temperature-controlled enclosures |
| Surface-mount URP package | 0.8 mm × 1.25 mm outline, SC-76A footprint - supports high-density PCB layouts and automated assembly |
Applications
| High-Precision ADC Reference | Low-Noise Instrumentation Amplifier Bias |
|---|---|
Use Scenario: Providing stable, low-drift reference voltage for 16-bit+ successive-approximation ADCs in portable data loggers. IC Role / Device Role / Timing Role: Zener diode operating as two-terminal shunt voltage reference, directly sourcing reference current into ADC's internal reference buffer. Use Value: Hard-knee linearity and ultra-low noise ensure < ±0.5 LSB integral nonlinearity error over temperature and time. | Use Scenario: Setting bias points for input-stage transistors in medical-grade ECG front-end amplifiers. IC Role / Device Role / Timing Role: Low-noise Zener supplying stable quiescent current to discrete op-amp input pairs. Use Value: 1/3–1/10 noise reduction versus standard Zeners lowers input-referred noise floor below 10 nV/√Hz. |
| Portable Battery Monitor IC Reference | Calibration-Grade Sensor Excitation |
Use Scenario: Generating fixed reference for voltage monitoring circuitry in lithium-ion battery fuel gauges. IC Role / Device Role / Timing Role: Shunt reference regulating voltage across sense resistor network feeding comparator inputs. Use Value: −1.5 mV/°C TC minimizes state-of-charge error drift across −20°C to +60°C operating range. | Use Scenario: Supplying excitation voltage to precision RTD or strain-gauge bridges in handheld test equipment. IC Role / Device Role / Timing Role: Low-drift, low-noise voltage source establishing bridge excitation potential independent of supply rail fluctuations. Use Value: 100 nA max reverse leakage prevents loading errors in high-impedance bridge configurations (>1 MΩ). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener reference applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TL431ACDBVR | Adjustable 3-terminal shunt regulator; requires external resistors; 2.495 V reference; higher IKA min (1 mA) | Needs external feedback network; unsuitable for ultra-low-current (<100 nA) biasing | Choose when adjustable output or higher current capability (>1 mA) is required |
| BZX84-C5V6 | Standard SOT-23 Zener; 5.6 V nominal; ZZT ≈ 40 Ω at 5 mA; TC ≈ −2.5 mV/°C; higher noise | Larger dynamic resistance and higher TC limit use in sub-1 µA precision references | Choose only for cost-sensitive, non-critical biasing where noise and drift are secondary |
Compared with TL431ACDBVR and BZX84-C5V6, the HZU5.6B2TRF-P-E provides superior low-current linearity, lower noise, and tighter TC-but requires no external components and operates down to 1 nA, making it optimal for miniaturized, ultra-low-power reference designs where simplicity and stability are prioritized.
Availability
HZU5.6B2TRF-P-E is available at Aetrix Electronics and suitable for high-precision ADC reference, low-noise instrumentation amplifier bias, and portable battery monitor IC reference requiring stable component supply, consistent parametric performance, and RoHS-compliant packaging.
Supply support for HZU5.6B2TRF-P-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor manufacturer specializing in microcontrollers, analog & power devices, and advanced SoCs for industrial, automotive, and infrastructure markets.
The HZU-LL Series was developed specifically for ultra-low-noise, hard-knee Zener reference applications in space-constrained, battery-operated instrumentation-emphasizing low-current stability, thermal predictability, and surface-mount manufacturability.
FAQ
What is the Zener voltage tolerance of HZU5.6B2TRF-P-E at 0.5 mA?
The HZU5.6B2TRF-P-E has a specified Zener voltage range of 4.6 V to 5.0 V at IZ = 0.5 mA, corresponding to a ±4.3% tolerance about the nominal 4.8 V midpoint. This tight tolerance supports direct use in applications requiring minimal post-calibration trimming, such as factory-trimmed sensor signal conditioning circuits.
Does HZU5.6B2TRF-P-E support operation below 1 µA?
Yes, the HZU5.6B2TRF-P-E maintains semi-logarithmic linear VZ–IZ behavior from 1 nA to 1 mA per its datasheet. At 100 nA, VZ remains within specification, enabling use in ultra-low-power wake-up circuits and energy-harvesting systems where bias current must stay below 1 µA.
What is the maximum allowable power dissipation for HZU5.6B2TRF-P-E at 60°C ambient?
Per Fig.3 in the datasheet, the HZU5.6B2TRF-P-E's power dissipation derates linearly from 150 mW at 25°C to zero at 150°C. At 60°C ambient, Pd = 150 mW × (1 − (60 − 25)/125) = 90 mW. Therefore, maximum continuous current is 90 mW / 4.8 V ≈ 18.8 mA.
Is HZU5.6B2TRF-P-E RoHS compliant and lead-free?
Yes, HZU5.6B2TRF-P-E is RoHS compliant and lead-free. The "-P-E" suffix in the part number denotes lead-free plating and RoHS-conforming packaging per Renesas' standard environmental compliance policy, verified in the official REJ03G1216-0500 document.
How does the noise performance of HZU5.6B2TRF-P-E compare to standard Zener diodes?
The HZU5.6B2TRF-P-E achieves approximately 1/3 to 1/10 the noise voltage of standard HZU-series Zeners due to its epitaxial planar process and optimized junction design. This translates to measurable reductions in integrated RMS noise-e.g., < 5 µVRMS (0.1–10 Hz) versus >20 µVRMS for conventional equivalents-critical in audio preamps and high-resolution sensor interfaces.
HZU5.6B2TRF-P-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- -
- Tolerance:
- -
- Power - Max:
- -
- Impedance (Max) (Zzt):
- -
- Current - Reverse Leakage @ Vr:
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
HZU5.6B2TRF-P-E FAQ
1.How can I place an order for HZU5.6B2TRF-P-E through Aetrix?
Please submit a Request for Quotation (RFQ) for HZU5.6B2TRF-P-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HZU5.6B2TRF-P-E reliable?
The price and inventory of HZU5.6B2TRF-P-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZU5.6B2TRF-P-E is usually 5 days.
3.What payment methods are accepted for HZU5.6B2TRF-P-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HZU5.6B2TRF-P-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HZU5.6B2TRF-P-E?
HZU5.6B2TRF-P-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HZU5.6B2TRF-P-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HZU5.6B2TRF-P-E?
For technical support, including HZU5.6B2TRF-P-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZU5.6B2TRF-P-E requirements.
6.How does Aetrix verify that HZU5.6B2TRF-P-E is sourced from the original manufacturer or authorized distributors?
All HZU5.6B2TRF-P-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZU5.6B2TRF-P-E meets industry standards.
7.What is the process for return or replacement of HZU5.6B2TRF-P-E?
All HZU5.6B2TRF-P-E units undergo pre-shipment inspection (PSI). If there is an issue with HZU5.6B2TRF-P-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HZU5.6B2TRF-P-E part is unused and in its original packaging.
Return procedure for HZU5.6B2TRF-P-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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