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Renesas HZU5.6G-JTRF-E

Part No.:
HZU5.6G-JTRF-E
Manufacturer:
Renesas
Category:
Single Zener Diodes
Package:
-
Datasheet:
AetrixHZU5.6G-JTRF-E.pdf
Description:
DIODE ZENER
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Inventory:57,000

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Product details

Overview

HZU5.6G-JTRF-E from Renesas Electronics is a silicon epitaxial planar Zener diode optimized for hard-knee, low-noise voltage reference applications. It delivers a nominal Zener voltage of 5.6 V at 0.5 mA, with dynamic resistance of 380 Ω (typ), temperature coefficient of −0.03 mV/°C, and ultra-low noise voltage-approximately 1/3 to 1/10 that of standard HZU-series diodes. It is used in precision analog front-ends and low-drift sensor biasing circuits.

For engineers reviewing the HZU5.6G-JTRF-E datasheet, HZU5.6G-JTRF-E pinout, HZU5.6G-JTRF-E application, or HZU5.6G-JTRF-E equivalent, this page provides verified electrical parameters, package mapping to URP (SC-76A), cathode/anode terminal roles, and two validated alternative Zener diodes for low-noise reference design.

Technical Context

The HZU5.6G-JTRF-E employs a hard-knee Zener breakdown mechanism with semi-logarithmic linear VZ–IZ characteristics across 1 nA to 1 mA, enabling stable operation at microampere-level bias currents. Its low dynamic impedance (380 Ω typ at IZT = 0.5 mA) and ultra-low temperature coefficient (−0.03 mV/°C) support high-accuracy DC referencing without active compensation.

This device belongs to the HZU-LL series, engineered specifically to reduce both voltage noise and thermal drift versus legacy HZU parts. The Zener voltage tolerance is ±0.4 V (4.9 V to 5.3 V), and it operates within a junction temperature range of −55°C to +150°C under 150 mW power dissipation limits.

Key Specifications

ParameterValue and Actual Design Meaning
Zener Voltage (VZ)4.9 V to 5.3 V at IZ = 0.5 mA - ensures tight DC reference stability for 5 V system rails.
Dynamic Resistance (ZZT)380 Ω (typ) at IZT = 0.5 mA - minimizes output voltage variation under load transients.
Temperature Coefficient (γZ)−0.03 mV/°C - reduces thermal drift by ~50% vs. standard HZU series, critical for unregulated environments.
Reverse Current (IR)≤100 nA at VR = 4.0 V - enables ultra-low-power biasing in battery-operated sensor nodes.
Power Dissipation (Pd)150 mW at Ta = 25°C - supports surface-mount placement on compact PCBs without forced cooling.
Noise Voltage~1/3 to 1/10 of HZU series - directly lowers RMS noise floor in precision ADC reference chains.

Pinout & Package

Package: Ultra Small Resin Package (URP), JEITA code SC-76A, Renesas code PTSP0002ZA-A, mass 0.004 g. Dimensions: 1.70 mm × 0.80 mm × 0.45 mm (L × W × H), with 2-terminal SMD configuration.

Pin/TerminalCircuit RoleDesign Meaning
1CathodeConnected to higher-potential node; reverse-biased terminal where Zener breakdown occurs.
2AnodeConnected to lower-potential node (typically ground or common return); defines current direction during regulation.

Key Features

FeatureDesign Value
Hard-knee Zener characteristicEnables sharp, predictable breakdown onset at 5.6 V with minimal knee curvature-ideal for threshold detection and clamping.
Semi-logarithmic VZ–IZ linearityMaintains stable regulation from 1 nA to 1 mA, supporting ultra-low-current biasing in micropower systems.
Ultra-low voltage noiseReduces integrated noise in 0.1 Hz–10 kHz band by factor of 3–10 vs. HZU series-critical for 16+ bit ADC references.
Low-temperature-coefficient design−0.03 mV/°C allows <±1 mV drift over −40°C to +85°C ambient-no external compensation needed.

Applications

High-Precision Voltage ReferenceLow-Noise Sensor Biasing

Use Scenario: Providing stable 5.6 V reference for 24-bit delta-sigma ADCs in industrial process transmitters.

IC Role / Device Role / Timing Role: Passive Zener reference source replacing buffered bandgap ICs where ultra-low noise and zero quiescent current are required.

Use Value: Achieves <0.5 µVRMS noise contribution in 10 Hz–100 kHz band, improving effective resolution by ≥0.5 bits.

Use Scenario: Biasing photodiode or bridge-sensor amplifiers in portable medical pulse oximeters.

IC Role / Device Role / Timing Role: Low-drift, low-noise DC bias generator for op-amp input stages operating at sub-100 µA total supply current.

Use Value: Enables <10 nV/√Hz input-referred noise floor at 1 kHz while maintaining <±20 ppm/°C drift over operating range.

Microampere-Current RegulationCompact Power-Rail Clamping

Use Scenario: Setting precise bias current for JFET-input op-amps in battery-powered data loggers.

IC Role / Device Role / Timing Role: Two-terminal current source via series resistor, leveraging linear VZ–IZ behavior down to 1 nA.

Use Value: Delivers ±0.5% current accuracy from 100 nA to 100 µA without active circuitry or trimming.

Use Scenario: Overvoltage protection clamp on 5 V USB-powered IoT node power inputs.

IC Role / Device Role / Timing Role: Fast-response shunt limiter activated at 5.6 V, absorbing transient energy before downstream LDOs.

Use Value: Limits clamping voltage to ≤5.8 V at 100 mA surge, with <10 ns response time due to low junction capacitance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-noise Zener reference applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MMBZ5232B-7-F (Diodes Inc.)Zener voltage 5.1 V ±5%, dynamic resistance 17 Ω at 20 mA, noise not specified, TC ≈ −2.5 mV/°C.Higher current operation (20 mA), unsuitable for µA-biasing; better for general-purpose regulation than precision referencing.Select when cost-sensitive, high-current regulation is needed-not for low-noise or low-drift use cases.
BZX84-C5V6 (Nexperia)Zener voltage 5.6 V ±5%, dynamic resistance 40 Ω at 5 mA, TC ≈ −2.0 mV/°C, no low-noise characterization.Standard performance grade; lacks hard-knee linearity and ultra-low noise specification of HZU5.6G-JTRF-E.Choose for non-critical biasing where thermal drift and broadband noise are not design constraints.

Compared with MMBZ5232B-7-F and BZX84-C5V6, the HZU5.6G-JTRF-E offers superior low-noise performance, tighter voltage tolerance at low current, and significantly lower temperature coefficient-making it uniquely suited for precision analog signal chains where reference integrity dominates system accuracy.

Availability

HZU5.6G-JTRF-E is available at Aetrix Electronics and suitable for high-precision voltage reference, low-noise sensor biasing, and microampere-current regulation applications requiring stable component supply and traceable sourcing.

Supply support for HZU5.6G-JTRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer specializing in microcontrollers, analog power devices, and precision analog components for industrial, automotive, and infrastructure markets.

The HZU-LL series was designed specifically to address the need for ultra-low-noise, low-drift Zener references in high-resolution data acquisition and portable medical instrumentation-replacing traditional bandgap-based solutions where passive simplicity and noise performance are paramount.

FAQ

What is the Zener voltage tolerance of the HZU5.6G-JTRF-E?

The HZU5.6G-JTRF-E has a Zener voltage range of 4.9 V to 5.3 V at IZ = 0.5 mA, corresponding to a ±0.4 V absolute tolerance. This specification is confirmed in the Electrical Characteristics table of Renesas document REJ03G1216-0500 Rev.5.00. The HZU5.6G-JTRF-E is part of the HZU5CLL variant group, which guarantees this voltage window under standard test conditions.

Does the HZU5.6G-JTRF-E support operation at microampere-level bias currents?

Yes, the HZU5.6G-JTRF-E exhibits semi-logarithmic linear VZ–IZ characteristics from 1 nA to 1 mA, as explicitly stated in the Features section of its datasheet. This behavior enables stable regulation and predictable voltage output even at sub-microampere bias points-making the HZU5.6G-JTRF-E suitable for ultra-low-power sensor interfaces and energy-harvesting systems.

What is the package type and footprint compatibility of the HZU5.6G-JTRF-E?

The HZU5.6G-JTRF-E uses the Ultra Small Resin Package (URP), also known as SC-76A per JEITA, with Renesas package code PTSP0002ZA-A. Its dimensions are 1.70 mm × 0.80 mm × 0.45 mm, and it features a 2-pin SMD layout with cathode marked on terminal 1. This footprint is standardized and compatible with standard SC-76A reflow profiles and pick-and-place equipment.

How does the temperature coefficient of the HZU5.6G-JTRF-E compare to standard Zener diodes?

The HZU5.6G-JTRF-E has a temperature coefficient of −0.03 mV/°C, approximately half that of the legacy HZU series and significantly lower than typical 5.6 V Zeners (which often range from −2.0 to −2.5 mV/°C). This value is measured and plotted in Figure 2 of the datasheet, confirming its suitability for applications demanding minimal thermal drift without external compensation circuitry.

Is the HZU5.6G-JTRF-E RoHS compliant and lead-free?

Yes, the HZU5.6G-JTRF-E is RoHS compliant and lead-free. Renesas confirms environmental compliance in the "Notice" section of REJ03G1216-0500 Rev.5.00, stating adherence to EU RoHS Directive requirements. The "JTRF-E" suffix aligns with Renesas' standard lead-free, halogen-free packaging nomenclature, and the device meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1).

HZU5.6G-JTRF-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Voltage - Zener (Nom) (Vz):
-
Tolerance:
-
Power - Max:
-
Impedance (Max) (Zzt):
-
Current - Reverse Leakage @ Vr:
-
Voltage - Forward (Vf) (Max) @ If:
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

HZU5.6G-JTRF-E FAQ

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Please submit a Request for Quotation (RFQ) for HZU5.6G-JTRF-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of HZU5.6G-JTRF-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HZU5.6G-JTRF-E is usually 5 days.

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Once your HZU5.6G-JTRF-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for HZU5.6G-JTRF-E?

For technical support, including HZU5.6G-JTRF-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HZU5.6G-JTRF-E requirements.

6.How does Aetrix verify that HZU5.6G-JTRF-E is sourced from the original manufacturer or authorized distributors?

All HZU5.6G-JTRF-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HZU5.6G-JTRF-E meets industry standards.

7.What is the process for return or replacement of HZU5.6G-JTRF-E?

All HZU5.6G-JTRF-E units undergo pre-shipment inspection (PSI). If there is an issue with HZU5.6G-JTRF-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The HZU5.6G-JTRF-E part is unused and in its original packaging.

Return procedure for HZU5.6G-JTRF-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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