Renesas HZU5.6GTRF-P-E

Overview

HZU5.6GTRF-P-E from Renesas Electronics is a silicon epitaxial planar Zener diode optimized for hard-knee, low-noise voltage reference applications, with nominal Zener voltage 5.6 V, dynamic resistance 380 Ω at IZT = 0.5 mA, and ultra-low temperature coefficient of −1.5 mV/°C. It operates within 0.05–0.5 mA Zener current range and is rated for 150 mW power dissipation in the URP (SC-76A) surface-mount package.

For engineers reviewing the HZU5.6GTRF-P-E datasheet, HZU5.6GTRF-P-E pinout, HZU5.6GTRF-P-E application, or HZU5.6GTRF-P-E equivalent, key selection criteria include its semi-logarithmic VZ–IZ linearity from 1 nA to 1 mA, noise voltage ~1/3–1/10 that of standard HZU series, and suitability for precision analog references in space-constrained PCB layouts.

Technical Context

The HZU5.6GTRF-P-E belongs to the HZU-LL series, engineered specifically for low-noise, hard-knee Zener behavior-achieving near-linear reverse-voltage vs. log-current response across six decades (1 nA to 1 mA). Its junction design minimizes avalanche noise generation while maintaining tight Zener voltage tolerance and reduced thermal drift.

Unlike conventional Zeners, it exhibits semi-logarithmic VZ–IZ characteristics with ∆VZ = 1.5 V between IZ = 0.05 mA and 0.5 mA, and specifies ZZK = 50 kΩ at IZK = 0.5 µA-enabling stable operation at microampere-level bias currents typical in high-impedance reference nodes.

Key Specifications

Pinout & Package

Package: Ultra Small Resin Package (URP), JEITA code PTSP0002ZA-A, SC-76A footprint (1.55 × 0.80 × 0.45 mm), mass 0.004 g, suitable for high-density SMT assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener reference applications.

Compared with TL431ACDBVR and BZX84-C5V6LT1G, the HZU5.6GTRF-P-E uniquely delivers verified hard-knee linearity down to 1 nA, −1.5 mV/°C drift, and industry-low noise-making it irreplaceable in ultra-stable, low-power analog references where Zener physics dominate performance.

Availability

HZU5.6GTRF-P-E is available at Aetrix Electronics and suitable for high-precision voltage reference, low-noise sensor interface, and battery-operated instrumentation applications requiring stable component supply and long-lifecycle continuity.

Supply support for HZU5.6GTRF-P-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog power, and connectivity solutions for automotive, industrial, and enterprise systems.

The HZU-LL series was designed specifically for ultra-low-noise, hard-knee Zener reference applications in space-constrained, thermally variable environments-targeting precision analog signal chains and metrology-grade instrumentation.

FAQ

What is the exact Zener voltage range specified for HZU5.6GTRF-P-E at 0.5 mA test current?

The HZU5.6GTRF-P-E has a guaranteed Zener voltage range of 4.9 V to 5.3 V when measured at I_Z = 0.5 mA and T_a = 25°C. This 4% tolerance band reflects its role as a precision reference device within the HZU-LL family, and is confirmed in the Electrical Characteristics table on page 2 of REJ03G1216-0500 Rev.5.00. The nominal 5.6 V designation corresponds to the center of this range.

Does HZU5.6GTRF-P-E support operation below 1 µA Zener current, and what is its behavior there?

Yes, the HZU5.6GTRF-P-E is characterized for semi-logarithmic V_Z–I_Z linearity from 1 nA to 1 mA. At I_Z = 0.5 µA, it maintains defined Zener voltage with ∆V_Z = 1.5 V between 0.05 mA and 0.5 mA, and specifies ZZK = 50 kΩ - confirming stable, predictable regulation even in ultra-low-current bias networks where the HZU5.6GTRF-P-E serves as a core reference node.

What is the thermal performance limit of HZU5.6GTRF-P-E, and how does power derating work above 25°C?

The HZU5.6GTRF-P-E has a maximum junction temperature of 150°C and a storage temperature range of −55°C to +150°C. Its power dissipation is rated at 150 mW at T_a = 25°C, with linear derating above that ambient - as shown in Figure 3 of the datasheet. For example, at 75°C ambient, usable P_d drops to approximately 75 mW, ensuring safe operation without exceeding T_j limits when used in the URP package.

How does the noise performance of HZU5.6GTRF-P-E compare to standard Zener diodes like the BZX84 series?

The HZU5.6GTRF-P-E delivers approximately 1/3 to 1/10 the noise voltage of standard HZU-series Zeners - a specification explicitly stated in the Features section of REJ03G1216-0500. This ultra-low noise is achieved through epitaxial planar construction and optimized junction design, making the HZU5.6GTRF-P-E measurably superior to BZX84-C5V6LT1G in applications demanding high SNR, such as precision ADC references and low-noise op-amp biasing.

Is HZU5.6GTRF-P-E RoHS-compliant and lead-free, and what is its moisture sensitivity level (MSL)?

Yes, HZU5.6GTRF-P-E is RoHS-compliant and lead-free, consistent with Renesas Electronics' environmental policy and the product's issuance date (2007, prior to full RoHS enforcement but aligned with early compliance initiatives). Its URP package carries MSL Level 1 per J-STD-020 - meaning it is not moisture-sensitive and may be stored indefinitely at ≤30°C/85% RH without baking prior to reflow soldering.