Renesas HZU6.8B1TRF-E

Overview

HZU6.8B1TRF-E from Renesas Electronics is a silicon planar Zener diode in ultra-small URP (SC-76A) surface-mount package, designed for precision voltage stabilization in low-power circuits. It delivers a nominal Zener voltage of 7.06 V to 7.36 V at 5 mA test current, with dynamic resistance ≤30 Ω, power dissipation up to 200 mW, and junction temperature rating of 150 °C - commonly used in voltage reference, overvoltage protection, and biasing networks for analog sensor interfaces.

For engineers reviewing the HZU6.8B1TRF-E datasheet, HZU6.8B1TRF-E pinout, HZU6.8B1TRF-E application, or HZU6.8B1TRF-E equivalent, key selection considerations include its B1-grade Zener tolerance (±2.1% at 7.21 V nominal), low rd for stable regulation under load variation, URP package compatibility with high-density PCB layouts, and suitability for industrial-grade signal conditioning where thermal stability and small-footprint reliability are critical.

Technical Context

This Zener diode operates in reverse breakdown mode with tightly controlled V_Z characteristics across ambient temperatures. Its B1 grade indicates tighter voltage distribution within the HZU6.8 family, verified at I_Z = 5 mA with pulse testing (PW = 40 ms) to minimize self-heating effects.

The device uses silicon planar construction for consistent parameter reproducibility and low leakage. Its URP package (JEITA code SC-76A) features a 0.8 mm × 0.8 mm footprint and 0.45 mm max height, enabling placement on compact boards without compromising thermal derating per Fig.3 - P_d drops linearly from 200 mW at 25 °C to ~100 mW at 85 °C.

Key Specifications

Pinout & Package

Package: Ultra-small Resin Package (URP), JEITA code SC-76A, Renesas code STSP0002ZA-A - surface-mount, 2-terminal, cathode-marked plastic case with 0.45 mm max profile.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage stabilization applications.

Compared with MMSZ4687T1G and BZX584-C7V5, the HZU6.8B1TRF-E offers superior voltage accuracy (B1 grade), smallest footprint (URP), and lowest r_d, making it optimal for space-constrained, precision-regulation roles - though its 200 mW rating requires careful thermal design in sustained-load scenarios.

Availability

HZU6.8B1TRF-E is available at Aetrix Electronics and suitable for industrial sensor signal conditioning, USB port overvoltage clamp, and portable medical pulse oximeter reference requiring stable component supply, traceable sourcing, and long-term lifecycle support.

Supply support for HZU6.8B1TRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and timing solutions for industrial, automotive, and consumer systems - founded on the merger of NEC Electronics and Renesas Technology.

The HZU Series belongs to Renesas' discrete Zener diode product line, engineered specifically for high-accuracy, low-profile voltage stabilization in modern surface-mount applications where thermal stability and grading consistency are essential.

FAQ

What is the Zener voltage range for HZU6.8B1TRF-E at 5 mA test current?

The HZU6.8B1TRF-E exhibits a Zener voltage range of 7.06 V to 7.36 V when tested at I_Z = 5 mA, corresponding to the B1 grade within the HZU6.8 family. This 2.1% tolerance band is tighter than standard B-grade devices and is validated using pulsed conditions (PW = 40 ms) to avoid self-heating errors - ensuring the HZU6.8B1TRF-E delivers repeatable regulation performance in real-world DC bias applications.

Is HZU6.8B1TRF-E suitable for use in high-density PCB layouts?

Yes, the HZU6.8B1TRF-E uses the URP (SC-76A) package measuring just 0.8 mm × 0.8 mm with a 0.45 mm maximum height, making it one of the smallest standardized Zener packages available. Its compact size allows placement adjacent to fine-pitch ICs and in multi-layer boards with strict keep-out zones - and the cathode/anode pinout is clearly marked on the top surface per datasheet Fig.1, simplifying automated optical inspection and rework.

How does the dynamic resistance of HZU6.8B1TRF-E affect regulation stability?

The HZU6.8B1TRF-E specifies dynamic resistance r_d ≤30 Ω at I_Z = 5 mA, meaning a ±1 mA change in load current causes ≤±30 mV shift in regulated output voltage. This low r_d directly improves regulation accuracy in feedback loops and reference supplies - especially critical in precision analog front-ends where even minor V_Z drift degrades ADC effective resolution or sensor linearity.

What is the maximum allowable junction temperature for HZU6.8B1TRF-E?

The HZU6.8B1TRF-E has a maximum junction temperature (T_j) rating of 150 °C, as specified in the Absolute Maximum Ratings table. This value defines the upper thermal limit for reliable long-term operation - and must be respected via proper PCB copper pour, ambient derating (per Fig.3), and power budgeting. Exceeding 150 °C risks parametric shift or permanent degradation of the HZU6.8B1TRF-E's Zener characteristics.

Does HZU6.8B1TRF-E meet RoHS compliance requirements?

Yes, the HZU6.8B1TRF-E complies with the EU RoHS Directive, as confirmed by Renesas Electronics' environmental documentation and material declarations. The device contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE) above threshold limits - and is rated for "Standard" quality grade applications including industrial equipment, test instrumentation, and consumer electronics.