Renesas HZU6B2LTRF-E

Overview

HZU6B2LTRF-E from Renesas Electronics is a silicon epitaxial planar Zener diode optimized for hard-knee, low-noise voltage reference applications. It delivers a nominal Zener voltage of 6.2 V at 5 mA, with dynamic resistance of 390 Ω (typ), temperature coefficient of −0.025 %/°C, and ultra-low noise voltage-approximately 1/3 to 1/10 that of the standard HZU series. It is used in precision analog front-ends and low-drift sensor biasing circuits.

For engineers reviewing the HZU6B2LTRF-E datasheet, HZU6B2LTRF-E pinout, HZU6B2LTRF-E application, or HZU6B2LTRF-E equivalent, key selection criteria include its hard-knee Vz–Iz linearity down to 1 nA, ultra-small URP package (SC-76A), low temperature coefficient, and suitability for low-noise reference design where stability under varying load and temperature is critical.

Technical Context

The HZU6B2LTRF-E employs a silicon epitaxial planar junction structure to achieve sharp Zener knee characteristics and reduced noise generation. Its semi-logarithmic linear Vz–Iz behavior spans six decades-from 1 nA to 1 mA-enabling stable regulation even at microampere-level bias currents.

Designed for surface-mount use, it features a cathode-anode two-terminal configuration in the ultra-small Resin Package (URP, JEITA code PTSP0002ZA-A). Its temperature coefficient is specified at −0.025 %/°C, approximately half that of the legacy HZU series, supporting improved thermal stability in compact analog systems.

Key Specifications

Pinout & Package

Package: Ultra Small Resin Package (URP), JEITA code PTSP0002ZA-A (SC-76A), 2-pin surface-mount, 0.8 mm × 1.25 mm footprint, 0.45 mm typical height, 0.004 g mass.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener reference applications.

Compared with MMBZ5234B-7-F and BZX84-C6V2, the HZU6B2LTRF-E provides superior low-current linearity, lower noise, and tighter thermal stability-making it uniquely suited for metrology-grade analog subsystems where reference integrity directly impacts measurement resolution.

Availability

HZU6B2LTRF-E is available at Aetrix Electronics and suitable for high-precision ADC reference design, low-drift sensor biasing, and portable instrumentation power rail applications requiring stable component supply and long-term parametric consistency.

Supply support for HZU6B2LTRF-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer specializing in microcontrollers, analog & power devices, and SoC solutions for industrial, automotive, and infrastructure markets.

The HZU-LL Series was designed specifically for low-noise, hard-knee voltage reference applications in space-constrained analog signal chains-emphasizing nanoampere-level regulation fidelity and thermal stability over conventional Zener performance.

FAQ

What is the Zener voltage tolerance of the HZU6B2LTRF-E?

The HZU6B2LTRF-E has a Zener voltage tolerance of ±5 % at I_Z = 5 mA. This means its actual breakdown voltage falls between 5.89 V and 6.51 V under standard test conditions. The tight tolerance supports consistent performance across production batches in precision reference designs without requiring post-manufacture trimming. This specification is verified per Renesas REJ03G1216-0500 Rev.5.00 test conditions.

Does the HZU6B2LTRF-E support operation at very low bias currents?

Yes, the HZU6B2LTRF-E maintains semi-logarithmic linear V_Z–I_Z characteristics from 1 nA up to 1 mA. This enables reliable regulation in ultra-low-power sensor interfaces and battery-operated instrumentation where bias currents are constrained to nanoampere levels. Its hard-knee behavior remains intact even at I_Z = 100 nA, unlike standard Zeners that exhibit soft breakdown in this range.

What is the maximum power dissipation rating for the HZU6B2LTRF-E?

The HZU6B2LTRF-E has a maximum power dissipation (P_d) of 150 mW at T_a = 25°C. Derating applies above 25°C per the curve in Figure 3 of the datasheet, reaching zero dissipation at 150°C junction temperature. This rating allows safe operation in compact PCB layouts without heatsinking, provided ambient temperature and trace thermal resistance are managed within limits.

Is the HZU6B2LTRF-E RoHS compliant and lead-free?

Yes, the HZU6B2LTRF-E is RoHS compliant and lead-free, consistent with Renesas Electronics' environmental policy and the EU Directive 2011/65/EU. The device uses lead-free solderable terminations and complies with JEDEC J-STD-020 moisture sensitivity level (MSL) 1, enabling standard reflow assembly without special handling. Full compliance documentation is available through Renesas' product change notifications.

How does the temperature coefficient of the HZU6B2LTRF-E compare to standard Zener diodes?

The HZU6B2LTRF-E exhibits a temperature coefficient of −0.025 %/°C-approximately half that of the legacy HZU series and significantly better than generic 6.2 V Zeners (typically −0.05 %/°C to −0.1 %/°C). This lower drift directly translates to <±1.5 mV total variation over −40°C to +85°C, making it suitable for applications demanding high thermal stability without external compensation.